Infineon Technologies CY14B104L-BA45XC

Overview

CY14B104L-BA45XC from Cypress Semiconductor is a 4 Mbit nonvolatile SRAM (nvSRAM) with QuantumTrap® technology, organized as 512K × 8, 45 ns access time, single 3V (+20% to –10%) supply, and FBGA-48 package. It performs automatic STORE on power loss using VCAP capacitor, supports software/hardware-initiated STORE/RECALL, and delivers 20-year data retention for mission-critical data logging in industrial controllers.

For engineers reviewing the CY14B104L-BA45XC datasheet, CY14B104L-BA45XC pinout, CY14B104L-BA45XC application, or CY14B104L-BA45XC equivalent, key selection criteria include AutoStore timing (tSTORE), VCAP capacitance requirement (0.1 µF), HSB pin behavior during STORE, and x8 vs. x16 configuration compatibility with existing memory bus layouts.

Technical Context

This nvSRAM integrates parallel SRAM and QuantumTrap nonvolatile storage in each cell, enabling infinite SRAM read/write cycles alongside 200,000 STORE cycles. STORE operations transfer data from volatile SRAM to nonvolatile elements either automatically at VCC drop below VSWITCH (~2.7 V), via HSB pin assertion, or through six-address software sequence.

RECALL restores data on power-up or via software command, with tHRECALL ≤ 15 ms. The device uses CE/OE/WE control logic identical to standard SRAMs but adds conditional STORE gating - hardware/software STOREs are ignored unless at least one write occurred since last STORE/RECALL, preventing spurious nonvolatile writes.

Key Specifications

Pinout & Package

Package: 48-ball Fine-Pitch Ball Grid Array (FBGA), 6 mm × 8 mm, 0.8 mm pitch, RoHS-compliant, lead-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nvSRAM applications.

Compared with STK14C88-45I-M1 and FM24V04-G, CY14B104L-BA45XC uniquely combines capacitor-backed hands-off STORE, HSB status signaling, and industrial temperature reliability - making it optimal for safety-critical, maintenance-free, and power-unstable environments.

Availability

CY14B104L-BA45XC is available at Aetrix Electronics and suitable for industrial PLCs, medical infusion pumps, automotive telematics units, and smart electricity meters requiring stable component supply across extended product lifecycles.

Supply support for CY14B104L-BA45XC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-reliability memory, PSoC, and USB solutions for industrial and automotive markets.

CY14B104L belongs to Cypress's QuantumTrap nvSRAM product line, designed specifically to replace battery-backed SRAM in applications demanding zero-maintenance, long-retention, and deterministic power-loss data capture.

FAQ

What is the minimum VCAP capacitance required for reliable AutoStore operation?

The CY14B104L-BA45XC requires a 0.1 µF ±20% X7R ceramic capacitor on the VCAP pin. This value is validated for tSTORE ≤ 12 ms at VCC = 2.7 V and –40°C ambient. Larger capacitors do not extend STORE time due to internal current limiting; undersized capacitors risk incomplete STORE under worst-case temperature/voltage conditions.

Can the HSB pin be left unconnected if hardware STORE is not used?

Yes - HSB has an internal weak pull-up and may be left floating if unused. However, leaving it unconnected forfeits STORE progress indication and eliminates the ability to externally initiate STORE. For systems requiring fail-safe coordination (e.g., disabling peripherals before STORE), HSB must be wired to a GPIO with open-drain capability.

Does software STORE require the device to be in a specific state before initiation?

Yes - software STORE requires CE to be active (LOW) and WE to remain HIGH throughout the entire 6-address read sequence. Any write cycle, CE deassertion, or address violation between steps aborts the sequence. The device must also have performed ≥1 SRAM write since the last STORE or RECALL; otherwise, the sequence completes with no action.

How does the CY14B104L-BA45XC handle simultaneous SRAM access and STORE/RECALL?

SRAM read/write operations are fully inhibited during STORE or RECALL. The device holds address/data/control lines in high-impedance state and asserts HSB LOW. Host systems must monitor HSB or implement timeout-based polling to avoid bus contention; no arbitration logic is built into the nvSRAM.