Infineon Technologies CY14B104L-BA45XI

Overview

CY14B104L-BA45XI from Cypress Semiconductor is a 4 Mbit (512K × 8) nonvolatile SRAM with QuantumTrap® technology, operating at 45 ns access time, single 3V supply (+20% to –10%), and industrial temperature range (–40°C to +85°C). It integrates volatile SRAM and nonvolatile storage in each cell, enabling automatic STORE on power loss using VCAP capacitor and software/hardware-initiated RECALL. Used in industrial PLCs for real-time data retention during brownouts.

For engineers reviewing the CY14B104L-BA45XI datasheet, CY14B104L-BA45XI pinout, CY14B104L-BA45XI application, or CY14B104L-BA45XI equivalent, key selection criteria include AutoStore timing (tSTORE = 15 ms), VCAP capacitance requirement (0.1 µF), HSB pin behavior during store busy, and x8 configuration compatibility with legacy 8-bit microcontrollers.

Technical Context

This nvSRAM combines parallel SRAM architecture with embedded QuantumTrap nonvolatile elements per cell, enabling simultaneous STORE/RECALL across all 524,288 bytes without block erasure. The device supports three STORE initiation methods: hardware (HSB pin), software (6-address sequence), and AutoStore triggered by VCC drop below VSWITCH (2.7 V).

During STORE, SRAM operations are inhibited for tSTORE (15 ms max); during RECALL, outputs remain high-Z until completion (tHRECALL = 10 ms). The 48-ball FBGA package (BA45XI) maps to x8 organization with A0–A18 addressing, DQ0–DQ7 bidirectional I/O, and dedicated VCAP pin for energy storage-no external voltage regulator required.

Key Specifications

Pinout & Package

Package: 48-ball Fine-Pitch Ball Grid Array (FBGA), 6 mm × 8 mm, 0.8 mm pitch, RoHS-compliant, marked "BA45XI" per JEDEC MO-246AC.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Compared with STK14C88-45I-M1F and FM24V10-G, CY14B104L-BA45XI uniquely balances deterministic AutoStore timing, industrial temperature support, and HSB-driven system coordination-making it optimal for safety-critical power-fail recovery where STORE initiation must be both autonomous and observable.

Availability

CY14B104L-BA45XI is available at Aetrix Electronics and suitable for industrial PLCs, medical infusion pumps, avionics black boxes, and ANSI-compliant smart meters requiring stable component supply with guaranteed 20-year data retention and no battery dependency.

Supply support for CY14B104L-BA45XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications systems.

CY14B104L belongs to the QuantumTrap nvSRAM product line, engineered specifically for mission-critical applications needing instant nonvolatile storage without batteries, capacitors, or firmware complexity.

FAQ

What is the minimum VCAP capacitance required for reliable AutoStore operation?

The CY14B104L-BA45XI requires a 0.1 µF X7R ceramic capacitor on the VCAP pin, placed within 5 mm of the device. This value ensures sufficient stored energy to complete a full 15 ms STORE cycle when VCC drops from 3.0 V to 2.7 V. Larger values do not improve reliability and may slow VCAP recharge time between power events.

Can the HSB pin be left unconnected if hardware STORE is not used?

Yes-the HSB pin has an internal weak pull-up and may be left floating if unused. However, leaving it unconnected eliminates STORE busy indication and prevents external hardware-triggered STORE. For systems relying solely on AutoStore or software STORE, no connection is required and no pull-down resistor is needed.

Does the 45 ns access time apply to both read and write cycles?

Yes-the 45 ns specification applies to tAA (address-access time) for reads and tWC (write cycle time) for writes under standard 3V ±10% conditions. Write setup/hold times (tSD, tHD) are separate: tSD = 5 ns minimum, tHD = 0 ns, meaning data must be valid 5 ns before WE deassertion.

How does the AutoStore disable sequence affect normal SRAM operation?

The AutoStore disable sequence (0x4E38 → 0x8B45) only disables automatic STORE on power loss-it does not affect SRAM read/write functionality, software STORE/RECALL, or hardware STORE via HSB. Normal SRAM operation continues uninterrupted; only the VCAP-triggered STORE path is disabled until re-enabled via the AutoStore enable sequence.