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Infineon Technologies CY14B104L-BA45XIT

Part No.:
CY14B104L-BA45XIT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
48-TFBGA
Datasheet:
AetrixCY14B104L-BA45XIT.pdf
Description:
IC NVSRAM 4MBIT PARALLEL 48FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,872

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Product details

Overview

CY14B104L-BA45XIT from Cypress Semiconductor is a 4 Mbit (512K × 8) nonvolatile SRAM with QuantumTrap® technology, delivering 45 ns access time, single 3V ±10% operation, and automatic STORE/RECALL on power loss or software command. It serves as drop-in SRAM replacement in mission-critical data logging, industrial controllers, and telecom line cards where persistent memory retention without external backup is required.

For engineers reviewing the CY14B104L-BA45XIT datasheet, CY14B104L-BA45XIT pinout, CY14B104L-BA45XIT application, or CY14B104L-BA45XIT equivalent, key selection criteria include VCAP-supported AutoStore timing, HSB hardware busy signaling, x8 vs. x16 configuration compatibility, and 200,000 STORE cycle endurance under industrial temperature range.

Technical Context

This nvSRAM integrates standard fast SRAM with embedded QuantumTrap nonvolatile elements per cell-enabling parallel STORE/RECALL across all 524,288 bytes. The device supports three STORE initiation modes: hardware-triggered via HSB pin, software-initiated via six-address sequence, and automatic on VCC drop below VSWITCH (typ. 2.7 V).

During STORE, SRAM read/write is inhibited for tSTORE (max 20 ms); during RECALL, outputs remain high-Z until completion (tHRECALL max 15 ms). The VCAP pin requires a 0.1 µF capacitor to sustain internal charge-pump operation during power failure, enabling hands-off data preservation without host intervention.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Size 4 Mbit organized as 512K × 8 - provides byte-addressable SRAM interface compatible with 8-bit microcontrollers and legacy bus systems.
Access Time 45 ns - ensures timing compliance with 22 MHz synchronous bus interfaces and meets real-time control latency requirements.
Supply Voltage 3.0 V ±10% - operates directly from standard 3.3 V LDO rails without level-shifting; tolerates brown-out down to 2.7 V before AutoStore triggers.
STORE Endurance 200,000 cycles - defines maximum number of nonvolatile write operations before QuantumTrap cell wear-out; exceeds typical field lifetime for industrial logging.
Data Retention 20 years at +85°C - guarantees data integrity in extended-temperature environments such as base station cabinets and motor drive enclosures.
Operating Temp –40°C to +85°C - qualified for industrial-grade deployment without derating; supports cold-start and thermal cycling reliability.
Package 48-ball FBGA (6 mm × 8 mm, 0.8 mm pitch) - enables high-density PCB layout in space-constrained modules like PCIe add-in cards and modular I/O systems.

Pinout & Package

Package: 48-ball Fine-Pitch Ball Grid Array (FBGA), RoHS-compliant, moisture sensitivity level 3.

Pin/Terminal Circuit Role Design Meaning
A0–A18 Input Address inputs for 512K × 8 configuration; A0–A18 fully decoded to select one of 524,288 bytes; unused pins float as NC in x8 mode.
DQ0–DQ7 I/O Bidirectional data bus for 8-bit transfers; tri-stated when OE HIGH or during STORE/RECALL; shares pins with SRAM core.
WE, CE, OE Input Standard SRAM control signals: WE (active LOW write), CE (active LOW chip select), OE (active LOW output enable); support asynchronous bus protocols.
VCAP Power Supply AutoStore capacitor connection point; requires 0.1 µF ceramic capacitor to supply energy for STORE during VCC collapse; internally regulated to ~2.5 V.
HSB I/O Hardware Store Busy open-drain signal; driven LOW during any STORE/RECALL; can initiate STORE when externally pulled LOW; weak internal pull-up if unconnected.
VCC / VSS Power / Ground Single 3V supply domain; VSS must be low-inductance ground plane connection to ensure STORE timing stability and noise immunity.

Key Features

Feature Design Value
QuantumTrap® Nonvolatile Cell Embedded per-cell nonvolatile storage eliminates need for external EEPROM/NVRAM and battery backup; enables true "zero-footprint" persistence.
AutoStore® on Power Loss Automatic STORE triggered by VCC drop below 2.7 V using VCAP-supplied energy - no firmware or host coordination required for data safety.
Software-Controlled STORE/RECALL Initiated via six-address read sequence (e.g., 0x4E38 → 0x8FC0); allows deterministic, timed nonvolatile writes synchronized with application state.
Hardware Store Busy (HSB) Open-drain status signal confirms STORE/RECALL progress and blocks concurrent SRAM access - simplifies system-level synchronization logic.
Infinite SRAM Read/Write Cycles Standard SRAM endurance preserved; only STORE operations consume finite 200K-cycle budget - decouples volatile performance from nonvolatile wear.

Applications

Industrial PLC Data Logging Telecom Line Card Configuration

Use Scenario: Capturing sensor timestamps, fault codes, and operational parameters during unexpected AC mains failure in programmable logic controllers.

IC Role / Device Role / Timing Role: Nonvolatile SRAM buffer that retains last-known state and runtime variables without battery or supercapacitor management circuitry.

Use Value: Eliminates external backup power design complexity while guaranteeing 20-year data retention at 85°C - critical for unattended factory-floor deployments.

Use Scenario: Storing port mapping tables, VLAN settings, and firmware patch metadata in carrier-grade Ethernet switches subject to frequent hot-swap and reboot cycles.

IC Role / Device Role / Timing Role: Configuration memory with sub-20 ms STORE latency and zero-latency RECALL on power-up - ensures <100 ms service restoration after failover.

Use Value: Enables immediate service resumption without boot-time configuration reload; avoids packet loss during warm restarts in metro aggregation nodes.

Medical Diagnostic Equipment Automotive ADAS Black Box

Use Scenario: Recording real-time ECG waveform snapshots and alarm event logs during power interruption in portable ultrasound or patient monitors.

IC Role / Device Role / Timing Role: High-reliability data capture buffer interfaced directly to ARM Cortex-M4 DMA engine via 8-bit parallel bus.

Use Value: Meets IEC 62304 Class C software safety requirements by preserving diagnostic trace data even during sudden 12 V battery disconnect events.

Use Scenario: Storing pre-crash sensor fusion data (IMU, camera trigger timestamps, CAN bus state) in autonomous driving ECUs where power may collapse mid-event.

IC Role / Device Role / Timing Role: Crash-data vault with guaranteed STORE activation within 10 µs of VCC dip detection - independent of MCU firmware execution.

Use Value: Provides forensically valid, tamper-resistant crash records compliant with UN R156 software update regulations and ISO 26262 ASIL-B requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
STK14C88-45I 4 Mbit nvSRAM with 45 ns access, but uses older SONOS nonvolatile technology; 100K STORE cycles; requires external VCAP charge pump IC. Lacks integrated AutoStore regulator; needs discrete charge management; not qualified for >85°C operation. Select only if legacy STK footprint compatibility is mandatory and industrial temp range is not required.
FM24V04-G 4 Mbit F-RAM with unlimited endurance and 55 ns access; no STORE delay or inhibit window; operates from 2.7–3.6 V. No VCAP capacitor needed; no HSB pin; lacks hardware STORE trigger; RECALL occurs automatically on power-up only. Prefer for high-write-frequency applications (e.g., real-time counters) where STORE cycle blocking is unacceptable.

Compared with STK14C88-45I and FM24V04-G, CY14B104L-BA45XIT uniquely combines integrated VCAP regulation, HSB-driven hardware synchronization, and 200K STORE cycles at full industrial temperature - making it optimal for deterministic, safety-critical data capture where timing predictability outweighs raw endurance.

Availability

CY14B104L-BA45XIT is available at Aetrix Electronics and suitable for industrial automation, telecom infrastructure, medical diagnostics, and automotive black box systems requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for CY14B104L-BA45XIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets, with focus on integration, low-power operation, and functional safety.

CY14B104L belongs to the QuantumTrap nvSRAM product line, engineered specifically for applications demanding seamless SRAM performance with guaranteed nonvolatile data retention during uncontrolled power loss - eliminating battery dependencies in harsh environments.

FAQ

What is the minimum VCAP capacitor value required for reliable AutoStore operation?

The datasheet specifies a 0.1 µF X7R ceramic capacitor on VCAP for CY14B104L-BA45XIT. This value ensures sufficient charge to complete a full STORE cycle (max 20 ms) when VCC drops from 3.0 V to 2.7 V. Using lower capacitance risks incomplete STORE; higher values (e.g., 0.22 µF) improve margin but do not reduce tSTORE.

Can CY14B104L-BA45XIT be used in x16 mode?

No. CY14B104L is strictly a 512K × 8 (x8) device. The x16 variant is CY14B104N (256K × 16). Pinouts, address decoding (A0–A18 vs. A0–A17), and byte-enable signals (BHE/ BLE) differ between the two. Attempting x16 operation on CY14B104L will result in incorrect addressing and data corruption.

How does the HSB pin behave during software-initiated STORE?

HSB is driven LOW immediately upon successful recognition of the sixth address (0x8FC0) in the software STORE sequence and remains LOW for the entire tSTORE duration (up to 20 ms). It returns HIGH only after STORE completion, signaling that SRAM read/write operations may safely resume - providing precise hardware synchronization without polling.

Is the 45 ns access time guaranteed over the full industrial temperature range?

Yes. The 45 ns access time (tAA) is specified across –40°C to +85°C and 3.0 V ±10%, verified per JEDEC JESD22-A108 stress testing. This includes worst-case corner screening for process, voltage, and temperature - ensuring timing compliance in thermally unregulated enclosures like outdoor telecom cabinets.

CY14B104L-BA45XIT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
48-TFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
NVSRAM
Technology:
NVSRAM (Non-Volatile SRAM)
Memory Size:
4Mbit
Memory Organization:
512K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
45ns
Access Time:
45 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-FBGA (6x10)

CY14B104L-BA45XIT FAQ

1.How can I place an order for CY14B104L-BA45XIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY14B104L-BA45XIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY14B104L-BA45XIT reliable?

The price and inventory of CY14B104L-BA45XIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY14B104L-BA45XIT is usually 5 days.

3.What payment methods are accepted for CY14B104L-BA45XIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY14B104L-BA45XIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY14B104L-BA45XIT?

CY14B104L-BA45XIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY14B104L-BA45XIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY14B104L-BA45XIT?

For technical support, including CY14B104L-BA45XIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY14B104L-BA45XIT requirements.

6.How does Aetrix verify that CY14B104L-BA45XIT is sourced from the original manufacturer or authorized distributors?

All CY14B104L-BA45XIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY14B104L-BA45XIT meets industry standards.

7.What is the process for return or replacement of CY14B104L-BA45XIT?

All CY14B104L-BA45XIT units undergo pre-shipment inspection (PSI). If there is an issue with CY14B104L-BA45XIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY14B104L-BA45XIT part is unused and in its original packaging.

Return procedure for CY14B104L-BA45XIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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