Infineon Technologies CY14B104L-ZS20XI

Overview

CY14B104L-ZS20XI from Cypress Semiconductor is a 4 Mbit (512K × 8) nonvolatile SRAM with QuantumTrap® technology, operating at 3.0 V ±10%, delivering 20 ns access time, infinite SRAM read/write cycles, and 200,000 STORE cycles. It integrates volatile SRAM and nonvolatile storage in each cell, enabling automatic STORE on power loss via VCAP capacitor and software- or hardware-triggered RECALL - deployed in industrial PLCs for real-time data retention during brownouts.

For engineers reviewing the CY14B104L-ZS20XI datasheet, CY14B104L-ZS20XI pinout, CY14B104L-ZS20XI application, or CY14B104L-ZS20XI equivalent, key selection considerations include x8 bus width support, FBGA-48 package compatibility, AutoStore timing constraints (tHRECALL = 20 ms), HSB-driven hardware store coordination, and VCAP capacitor sizing (0.1 µF).

Technical Context

The CY14B104L-ZS20XI implements a dual-cell architecture: standard fast SRAM paired with embedded QuantumTrap nonvolatile elements per bit. STORE transfers data from SRAM to nonvolatile cells using charge stored on the external VCAP capacitor when VCC drops below VSWITCH (2.7 V), while RECALL restores data on power-up without altering nonvolatile content.

It supports three STORE initiation modes - AutoStore (power-down triggered), Hardware Store (HSB pin asserted), and Software Store (6-address sequence). All STORE/RECALL operations inhibit concurrent SRAM access, and byte enables (BHE/BLE) are absent in x8 configuration, confirming this device operates exclusively in 512K × 8 mode.

Key Specifications

Pinout & Package

Package: 48-ball Fine-Pitch Ball Grid Array (FBGA), 6 mm × 8 mm, 0.8 mm pitch, RoHS-compliant. Pinout validated per Document #001-07102 Rev. *L, Figure 1 (x8 configuration).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Compared with STK14C88-3AJ5F and FM24V10-G, the CY14B104L-ZS20XI uniquely combines 4 Mbit density, 20 ns speed, integrated AutoStore with VCAP, and HSB signaling - making it optimal for new industrial designs requiring zero-software STORE assurance and fast SRAM performance.

Availability

CY14B104L-ZS20XI is available at Aetrix Electronics and suitable for industrial PLCs, medical diagnostic devices, automotive telematics units, and smart grid meters requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for CY14B104L-ZS20XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and consumer applications.

The CY14B series was designed specifically for mission-critical data logging and state preservation in systems where power reliability cannot be assumed - targeting applications demanding both SRAM speed and EEPROM-like nonvolatility without compromise.

FAQ

What is the minimum VCAP capacitor value required for reliable AutoStore operation?

The CY14B104L-ZS20XI requires a 0.1 µF ceramic capacitor on the VCAP pin, rated for ≥6.3 V and placed within 5 mm of the device. This value ensures sufficient charge to complete a single STORE cycle when VCC collapses from 3.0 V to 2.7 V. Larger capacitors extend margin but do not improve functionality; tantalum or electrolytic types are discouraged due to ESR and aging effects.

Can the HSB pin be left unconnected if hardware STORE is not used?

Yes - the HSB pin has an internal weak pull-up and may be left floating if unused. When disconnected, the pin remains HIGH during normal operation and does not trigger STORE. However, if HSB is externally pulled LOW (e.g., by a power-fail detector), the device will initiate STORE after tDELAY (100 ns), provided at least one SRAM write occurred since the last STORE or RECALL.

Does the CY14B104L-ZS20XI support x16 bus width?

No - the CY14B104L variant is strictly 512K × 8 (x8) organization, using address lines A0–A18 and data lines DQ0–DQ7. The x16 configuration (256K × 16) is implemented only in the CY14B104N variant, which uses different pinout and byte-enable signals (BHE/BLE). Using CY14B104L in x16 mode is electrically and functionally invalid.

How does the software STORE sequence prevent accidental activation?

The software STORE requires six exact CE-controlled read cycles to consecutive addresses (0x4E38, 0xB1C7, 0x83E0, 0x7C1F, 0x703F, 0x8FC0) with WE held HIGH throughout. Any intervening write, incorrect address, or timing violation (e.g., exceeding tSS = 100 ns between reads) aborts the sequence. This prevents spurious STORE from noise, reset glitches, or partial firmware execution.