Infineon Technologies CY14B104L-ZS25XCT

Overview

CY14B104L-ZS25XCT from Cypress Semiconductor is a 4 Mbit (512K × 8) nonvolatile SRAM with QuantumTrap® technology, delivering 25 ns access time, single 3V (+20% to –10%) operation, and hardware/software-controlled STORE/RECALL functions. It serves as a drop-in SRAM replacement in systems requiring persistent data retention across power cycles-e.g., industrial PLCs, medical data loggers, and telecom control cards.

For engineers reviewing the CY14B104L-ZS25XCT datasheet, CY14B104L-ZS25XCT pinout, CY14B104L-ZS25XCT application, or CY14B104L-ZS25XCT equivalent, key selection criteria include VCAP capacitor sizing for AutoStore, HSB timing during hardware-initiated STORE, byte-enable compatibility in x16 mode, and 200,000 STORE cycle endurance versus infinite RECALL cycles.

Technical Context

The CY14B104L-ZS25XCT integrates parallel SRAM and QuantumTrap nonvolatile cells per bit, enabling simultaneous STORE/RECALL across all 512K locations. Its architecture supports three STORE triggers: automatic on VCC dropout below VSWITCH, software via six-address read sequence, and hardware via HSB pin assertion.

During STORE, SRAM writes are inhibited and HSB asserts low for tSTORE (max 20 ms); during RECALL, SRAM is cleared then loaded from nonvolatile storage in tHRECALL (max 15 ms). The device uses internal voltage regulation to drive VCAP and maintains data retention for 20 years without power.

Key Specifications

Pinout & Package

48-ball FBGA package (9 mm × 9 mm, 0.8 mm pitch) with exposed thermal pad; RoHS-compliant, Pb-free construction. Pinout optimized for 8-bit bus interfacing with dedicated VCAP, HSB, and standard SRAM control signals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Compared with FM24V04-G and AS4C4M16SA-6BIN, the CY14B104L-ZS25XCT uniquely combines 25 ns SRAM speed, hardware STORE arbitration via HSB, and capacitor-based AutoStore - making it optimal for space-constrained industrial systems needing guaranteed power-fail response without batteries or FRAM timing trade-offs.

Availability

CY14B104L-ZS25XCT is available at Aetrix Electronics and suitable for industrial data loggers, telecom line cards, and medical diagnostic devices requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for CY14B104L-ZS25XCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets.

The CY14B nvSRAM product line targets applications demanding SRAM performance with nonvolatile persistence - specifically eliminating battery backup in mission-critical embedded systems.

FAQ

What capacitor value is required on the VCAP pin for reliable AutoStore operation?

A 0.1 µF ceramic capacitor rated for ≥10 V must be placed between VCAP and VSS, located within 5 mm of the package. This value ensures sufficient charge to complete one STORE cycle (tSTORE ≤ 20 ms) when VCC drops below 2.7 V. Larger capacitors do not improve reliability and may slow VCAP charging during normal operation.

Can CY14B104L-ZS25XCT be used in x16 mode?

No - CY14B104L is strictly 512K × 8 organized; the x16 variant is CY14B104N. Using CY14B104L in x16 mode will result in incorrect addressing and data corruption. Pinouts, address mapping (A0–A18), and DQ pin count (DQ0–DQ7 only) are fixed for 8-bit operation per datasheet Rev. *L page 2.

How does the HSB pin behave during a software-initiated STORE?

HSB is driven LOW immediately upon successful initiation of the six-address software STORE sequence and remains LOW for the full tSTORE duration (≤20 ms). It returns HIGH only after nonvolatile programming completes and SRAM becomes accessible again - providing unambiguous hardware signaling for system-level STORE synchronization.

Is the CY14B104L-ZS25XCT compatible with 3.3 V I/O standards?

Yes - its inputs accept VIH ≥ 2.0 V and VIL ≤ 0.8 V, and outputs drive VOH ≥ 2.4 V and VOL ≤ 0.4 V at IOL = 8 mA, meeting standard 3.3 V LVTTL levels. No level-shifting is required when interfacing with 3.3 V microcontrollers or FPGAs.