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Infineon Technologies CY14B104L-ZS25XI
- Part No.:
- CY14B104L-ZS25XI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY14B104L-ZS25XI.pdf
- Description:
- IC NVSRAM 4MBIT PAR 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:3,737
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Product details
Overview
CY14B104L-ZS25XI from Cypress Semiconductor is a 4 Mbit (512K × 8) nonvolatile static RAM with QuantumTrap® technology, functioning as a drop-in SRAM replacement with integrated nonvolatile storage. It delivers 25 ns access time, operates from single 3V ±10% supply, supports automatic STORE on power loss via VCAP capacitor, and guarantees 20-year data retention and 200,000 STORE cycles. Used in industrial control modules where volatile memory persistence is critical during brownouts.
For engineers reviewing the CY14B104L-ZS25XI datasheet, CY14B104L-ZS25XI pinout, CY14B104L-ZS25XI application, or CY14B104L-ZS25XI equivalent, key selection criteria include x8 bus interface compatibility, HSB-driven hardware store timing, VCAP capacitor sizing (0.1 µF), AutoStore enable/disable sequence, and FBGA-48 footprint alignment with legacy TSOP II layouts.
Technical Context
This nvSRAM integrates parallel SRAM and QuantumTrap nonvolatile cells per bit, enabling simultaneous STORE/RECALL across all 524,288 bytes without block erasure. The architecture decouples volatile read/write (infinite cycles) from nonvolatile STORE (200k cycles) and RECALL (infinite), with hardware store triggered by HSB pin assertion or VCC dropout below VSWITCH (~2.7 V).
Operation modes are controlled via CE, WE, OE, BHE/ BLE (x16 only), and address-based software sequences - including six-address STORE (0x4E38 → 0x8FC0), RECALL (0x4E38 → 0x4C63), and AutoStore disable (0x4E38 → 0x8B45). All sequences require CE-controlled reads with WE held HIGH and no intervening accesses.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4 Mbit (512K × 8 organization), directly replaces standard 512K × 8 SRAMs without address/data bus redesign. |
| Access Time | 25 ns max - ensures timing compliance with 33 MHz microcontrollers and legacy ISA bus peripherals. |
| Supply Voltage | 3.0 V ±10% (2.7–3.6 V) - compatible with single-supply 3.3 V systems; no separate VIO or backup battery required. |
| STORE Endurance | 200,000 cycles - sufficient for daily power-cycle logging in industrial HMIs or programmable logic controllers. |
| Data Retention | 20 years at +85°C - validated retention under extended high-temperature storage, critical for medical device firmware archives. |
| AutoStore Trigger | VCC dropout to ≤2.7 V - initiates seamless STORE using charge stored on external 0.1 µF VCAP capacitor. |
| Package | 48-ball FBGA (6 mm × 8 mm, 0.8 mm pitch) - enables high-density PCB layout while maintaining thermal performance comparable to TSOP II. |
Pinout & Package
Package: 48-ball Fine-Pitch Ball Grid Array (FBGA), 6 mm × 8 mm body, 0.8 mm ball pitch, RoHS-compliant, lead-free finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Input | Address inputs for 512K × 8 mode; A0–A18 fully decoded to select one of 524,288 bytes; unused pins float as NC in x8 configuration. |
| DQ0–DQ7 | Input/Output | Bidirectional data bus for 8-bit interface; tri-stated when OE HIGH or during STORE/RECALL; shares pins with SRAM-compatible controllers. |
| WE, CE, OE | Input | Standard SRAM control signals (active LOW); CE enables chip select, WE gates write, OE enables output buffers - no protocol translation needed. |
| VCAP | Power Supply | Connects to 0.1 µF ceramic capacitor; supplies energy for STORE during VCC collapse; internal regulator maintains ~2.5 V during operation. |
| HSB | Input/Output | Open-drain status/control pin: driven LOW during STORE/RECALL; pulled LOW externally to initiate hardware STORE; internally pulled HIGH when idle. |
| VCC, VSS | Power | Single 3V supply and ground; VSS must be low-inductance connection to minimize noise coupling into quantum storage circuitry. |
Key Features
| Feature | Design Value |
|---|---|
| QuantumTrap® Nonvolatile Cell | Embedded per-bit nonvolatile storage eliminates need for external EEPROM/NVRAM and associated glue logic or firmware overhead. |
| Hardware Store Busy (HSB) | Real-time open-drain status signal enables system-level coordination - e.g., halting DMA transfers before STORE begins - without polling. |
| AutoStore Disable Sequence | Six-address software sequence (0x4E38 → 0x8B45) allows selective disabling of automatic STORE during maintenance or firmware updates. |
| Software-Controlled STORE/RECALL | Deterministic six-read address sequences provide precise control over nonvolatile operations independent of power conditions. |
| Byte-Level Write Enable | Supports partial-word writes in x16 mode via BHE/BLE; not applicable to CY14B104L-ZS25XI (x8-only), simplifying interface design. |
Applications
| Industrial PLC Data Logging | Medical Device Configuration Storage |
|---|---|
|
Use Scenario: Persistent storage of runtime I/O states and alarm history in programmable logic controllers during mains failure. IC Role / Device Role / Timing Role: Nonvolatile SRAM buffer that retains last valid scan cycle data without battery backup or wear-limited flash. Use Value: Eliminates supercapacitor aging concerns and flash write-latency stalls; supports >100,000 daily power cycles over 10+ years. |
Use Scenario: Storing calibrated sensor offsets and user preferences in portable ultrasound machines subject to frequent on/off cycling. IC Role / Device Role / Timing Role: Zero-latency recall memory ensuring boot-time availability of calibration tables within 10 ms of power-up. Use Value: Guarantees deterministic tHRECALL ≤ 15 ms, avoiding boot delays that would disrupt clinical workflow. |
| Avionics Black Box Buffer | Railway Signaling Event Recorder |
|
Use Scenario: Capturing flight-critical telemetry snapshots prior to emergency power loss in cockpit display units. IC Role / Device Role / Timing Role: High-reliability memory with VCAP-fueled STORE activated at VCC < 2.7 V, synchronized to aircraft power bus monitoring. Use Value: Meets DO-160 Section 22 crash-survivable data retention requirements via 20-year retention at +85°C. |
Use Scenario: Recording switch position changes and interlocking logic states in ERTMS Level 2 balise readers deployed in outdoor cabinets. IC Role / Device Role / Timing Role: Industrial-temperature (–40°C to +85°C) nvSRAM with AutoStore immunity to voltage sags from track-side power fluctuations. Use Value: Withstands ≥500,000 STORE cycles over 15-year service life, exceeding EN 50129 SIL-4 data integrity mandates. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FM24CL04-G (Cypress/Infineon) | 4 Kbit F-RAM, 400 kHz I²C interface, no STORE cycle limit, but 10× lower density and serial latency. | Requires I²C master and firmware driver; unsuitable for parallel-bus SRAM drop-in replacement. | Select only if system already uses I²C infrastructure and density requirements are ≤4 Kbit. |
| AS4C4M16SA-6TCN (Alliance Memory) | 4 Mbit ×16 parallel SRAM, no nonvolatile capability, 15 ns access, TSOP II package. | Lacks STORE/RECALL; requires external NV backup (e.g., SPI EEPROM + controller), increasing BOM and firmware complexity. | Choose only when nonvolatility is unnecessary and maximum speed (15 ns) is prioritized over data persistence. |
Compared with FM24CL04-G and AS4C4M16SA-6TCN, CY14B104L-ZS25XI uniquely provides parallel SRAM compatibility, deterministic STORE/RECALL timing, and integrated nonvolatility - eliminating external components and firmware overhead while meeting industrial lifecycle requirements.
Availability
CY14B104L-ZS25XI is available at Aetrix Electronics and suitable for industrial PLC data logging, medical device configuration storage, avionics black box buffering, and railway signaling event recording requiring stable component supply across extended product lifecycles.
Supply support for CY14B104L-ZS25XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and aerospace applications, with core expertise in nonvolatile technologies.
CY14B104L belongs to Cypress's nvSRAM product line, engineered specifically for systems demanding SRAM-speed operation with guaranteed data persistence during uncontrolled power loss - targeting mission-critical infrastructure and safety-certified equipment.
FAQ
What is the minimum VCAP capacitor value required for reliable AutoStore operation?
The CY14B104L-ZS25XI requires a 0.1 µF X7R ceramic capacitor on the VCAP pin, rated for ≥6.3 V, placed within 5 mm of the device. This value ensures sufficient charge to complete one full STORE cycle even at VCC = 2.7 V and TA = +85°C, as verified in DC Electrical Characteristics Table (page 7 of datasheet 001-07102).
Can CY14B104L-ZS25XI be used in x16 mode?
No. CY14B104L-ZS25XI is factory-configured for 512K × 8 organization only. The "L" suffix denotes x8 configuration; the x16 variant is CY14B104N. Pinout, address decoding (A0–A18), and DQ count (DQ0–DQ7) are fixed for byte-wide operation - attempting x16 use will result in incorrect addressing and data corruption.
How does the HSB pin behave during a software-initiated STORE?
During software STORE, HSB is driven LOW immediately after the sixth address read (0x8FC0) and remains LOW for the entire tSTORE duration (max 20 ms). It returns HIGH only upon successful completion. If the sequence is corrupted, HSB stays HIGH - providing unambiguous hardware confirmation of STORE initiation and completion without software polling.
Is the CY14B104L-ZS25XI pin-compatible with standard 48-ball FBGA SRAMs?
Yes - it uses JEDEC-standard 48-ball FBGA (MO-276AA) with identical mechanical footprint, ball pitch (0.8 mm), and pad layout as industry-standard 4 Mbit SRAMs. Signal mapping (A0–A18, DQ0–DQ7, CE/WE/OE, VCC/VSS) matches conventional SRAMs, enabling direct PCB-level replacement without layout revision.
CY14B104L-ZS25XI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 4Mbit
- Memory Organization:
- 512K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 25ns
- Access Time:
- 25 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY14B104L-ZS25XI FAQ
1.How can I place an order for CY14B104L-ZS25XI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY14B104L-ZS25XI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY14B104L-ZS25XI reliable?
The price and inventory of CY14B104L-ZS25XI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY14B104L-ZS25XI is usually 5 days.
3.What payment methods are accepted for CY14B104L-ZS25XI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY14B104L-ZS25XI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY14B104L-ZS25XI?
CY14B104L-ZS25XI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY14B104L-ZS25XI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY14B104L-ZS25XI?
For technical support, including CY14B104L-ZS25XI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY14B104L-ZS25XI requirements.
6.How does Aetrix verify that CY14B104L-ZS25XI is sourced from the original manufacturer or authorized distributors?
All CY14B104L-ZS25XI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY14B104L-ZS25XI meets industry standards.
7.What is the process for return or replacement of CY14B104L-ZS25XI?
All CY14B104L-ZS25XI units undergo pre-shipment inspection (PSI). If there is an issue with CY14B104L-ZS25XI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY14B104L-ZS25XI part is unused and in its original packaging.
Return procedure for CY14B104L-ZS25XI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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