Infineon Technologies CY14B104L-ZS25XIT

Overview

CY14B104L-ZS25XIT from Cypress Semiconductor is a 4 Mbit (512K × 8) nonvolatile SRAM with QuantumTrap® technology, operating at 3V ±10%, 25 ns access time, and supporting AutoStore® on power loss via VCAP capacitor. It performs hardware/software STORE and power-up RECALL, enabling data retention without external backup power in industrial control and metering systems.

For engineers reviewing the CY14B104L-ZS25XIT datasheet, CY14B104L-ZS25XIT pinout, CY14B104L-ZS25XIT application, or CY14B104L-ZS25XIT equivalent, key selection criteria include x8 bus width compatibility, FBGA-48 package footprint, 200,000 STORE cycle endurance, VCAP-based autonomous power-loss protection, and HSB-driven hardware store signaling.

Technical Context

The CY14B104L-ZS25XIT integrates standard SRAM cells with parallel QuantumTrap nonvolatile elements per cell, enabling simultaneous infinite SRAM read/write cycles and up to 200,000 STORE operations. Its architecture decouples volatile operation from nonvolatile persistence, eliminating battery dependency.

STORE is triggered automatically at VCC < VSWITCH (2.7 V), initiated by software address sequence (0x4E38–0x8FC0), or asserted via HSB pin pull-down; RECALL occurs on power-up or via software sequence (0x4E38–0x4C63). The device inhibits SRAM access during STORE/RECALL and uses internal regulation to drive VCAP from VCC.

Key Specifications

Pinout & Package

Package: 48-ball Fine-Pitch Ball Grid Array (FBGA), 6 mm × 8 mm, 0.8 mm pitch, RoHS-compliant, lead-free finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Compared with STK14C88-3LF35I and FM24CL64-G, the CY14B104L-ZS25XIT uniquely delivers parallel-byte access, 25 ns speed, integrated AutoStore with VCAP, and industrial temperature support - making it the only option for high-reliability, high-bandwidth, battery-free nonvolatile buffering in 3V embedded systems.

Availability

CY14B104L-ZS25XIT is available at Aetrix Electronics and suitable for smart metering, industrial PLCs, medical infusion pumps, and HMI controllers requiring stable component supply, long-lifecycle assurance, and RoHS-compliant packaging.

Supply support for CY14B104L-ZS25XIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability mixed-signal and memory solutions for industrial, automotive, and computing applications.

The CY14B nvSRAM product line targets applications demanding battery-free nonvolatile data retention with SRAM speed - specifically engineered for metering, automation, and safety-critical embedded systems.

FAQ

What is the minimum VCAP capacitance required for reliable AutoStore operation?

The CY14B104L-ZS25XIT requires a 0.1 µF X7R ceramic capacitor on the VCAP pin, placed within 5 mm of the device. This value ensures sufficient stored energy to complete the full 512K × 8 STORE operation within the maximum tSTORE of 20 ms, even at VCC = 2.7 V and T = +85°C, as specified in DC Electrical Characteristics Table 1.

Can HSB be left unconnected if hardware STORE is not used?

Yes - HSB has an internal weak pull-up and may be left floating if unused. When disconnected, the pin remains HIGH during normal operation and does not initiate STORE. It only drives LOW during active STORE/RECALL cycles or when externally pulled LOW; no external pull-up resistor is required unless driving it from an open-drain source.

Does software STORE require OE to be active during the address sequence?

No - the software STORE sequence (0x4E38 → 0x8FC0) uses CE-controlled reads only; OE may be HIGH or LOW. The datasheet explicitly states "it is not necessary that OE be LOW for a valid sequence." What matters is six consecutive CE-active reads in exact order, with WE held HIGH throughout, and no intervening accesses.

How does the device prevent unintended STORE during power-up or noise transients?

The CY14B104L-ZS25XIT implements two safeguards: (1) AutoStore is disabled until at least one SRAM write occurs since the last RECALL, preventing spurious STORE on reset; (2) HSB-initiated STORE requires tDELAY (min 100 ns) after pin assertion, allowing noise filtering. Both mechanisms are hardwired in silicon and require no firmware configuration.