Infineon Technologies CY14B104L-ZS45XC

Overview

CY14B104L-ZS45XC from Cypress Semiconductor is a 4 Mbit (512K × 8) nonvolatile SRAM with QuantumTrap® technology, functioning as a drop-in SRAM replacement with integrated nonvolatile storage. It delivers 45 ns access time, operates from single 3V ±10% supply, and supports automatic STORE on power loss using an external VCAP capacitor. Used in industrial control systems requiring persistent memory retention after unexpected power interruption.

For engineers reviewing the CY14B104L-ZS45XC datasheet, CY14B104L-ZS45XC pinout, CY14B104L-ZS45XC application, or CY14B104L-ZS45XC equivalent, key selection criteria include AutoStore timing (tSTORE), RECALL duration (tHRECALL), VCAP capacitance requirement (0.1 µF), HSB pin behavior during store busy, and x8 vs. x16 configuration compatibility.

Technical Context

The CY14B104L-ZS45XC integrates standard SRAM cells with parallel QuantumTrap nonvolatile elements per cell, enabling concurrent SRAM operation and atomic STORE/RECALL. Its architecture separates volatile read/write cycles (infinite endurance) from nonvolatile STORE cycles (200,000 max) and RECALL cycles (infinite).

AutoStore activation relies on internal voltage monitoring of VCC against VSWITCH (~2.5 V), triggering capacitor-powered STORE when VCC drops below threshold. The HSB pin serves dual roles: hardware-initiated STORE request input and open-drain busy indicator output during active STORE/RECALL.

Key Specifications

Pinout & Package

Package: 48-ball FBGA (6 mm × 8 mm, 0.8 mm pitch), RoHS-compliant, lead-free. Pinout validated per Document #001-07102 Rev. *L Figure 1 (x8 configuration).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Compared with STK14C88-3AJ and FM24CL64B, the CY14B104L-ZS45XC uniquely combines high density, capacitor-based zero-maintenance AutoStore, and hardware-interrupt-capable HSB-making it optimal for industrial systems where reliability, longevity, and deterministic power-loss response are mandatory.

Availability

CY14B104L-ZS45XC is available at Aetrix Electronics and suitable for industrial PLCs, medical infusion devices, avionics black boxes, and smart grid meters requiring stable component supply with guaranteed 20-year data retention and capacitor-backed nonvolatile operation.

Supply support for CY14B104L-ZS45XC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable system solutions for industrial, automotive, and communications markets.

The CY14B104L-ZS45XC belongs to Cypress's nvSRAM product line, engineered specifically to replace battery-backed SRAM in mission-critical systems where maintenance-free, long-life, and deterministic power-loss data preservation are essential.

FAQ

What is the minimum VCAP capacitor value required for reliable AutoStore operation?

The CY14B104L-ZS45XC requires a 0.1 µF ceramic capacitor on the VCAP pin, rated for ≥10 V, placed within 5 mm of the package. This value ensures sufficient charge to complete the full STORE cycle (tSTORE ≤ 20 ms) when VCC drops below VSWITCH (2.5 V). Larger capacitors extend margin but do not improve speed or reliability beyond specification.

Can the HSB pin be left unconnected if hardware STORE is not used?

Yes-the HSB pin has an internal weak pull-up and may be left floating if hardware-initiated STORE is unused. However, leaving it unconnected forfeits the ability to detect STORE/RECALL busy status or trigger hardware STORE externally. For systems relying solely on software STORE/RECALL, HSB may be omitted from PCB routing.

Does the CY14B104L-ZS45XC support x16 data bus configuration?

No-CY14B104L-ZS45XC is strictly a 512K × 8 (x8) device. The x16 variant is the CY14B104N. Pinout, address mapping (A0–A18 vs. A0–A17), and byte-enable signals (BHE/ BLE) differ between models; they are not pin-compatible or functionally interchangeable without board redesign.

How does AutoStore prevent spurious triggers during brownout conditions?

The CY14B104L-ZS45XC ignores AutoStore unless at least one SRAM write has occurred since the last STORE or RECALL cycle. This write-gating mechanism prevents unnecessary nonvolatile writes during transient voltage sags where no data change occurred-preserving STORE endurance and avoiding corruption from partial writes.