Infineon Technologies CY14B104L-ZS45XCT

Overview

CY14B104L-ZS45XCT from Cypress Semiconductor is a 4 Mbit (512K × 8) nonvolatile SRAM with QuantumTrap® technology, delivering 45 ns access time, single 3V ±10% operation, and automatic STORE on power loss using an external VCAP capacitor. It serves as drop-in SRAM replacement in mission-critical data logging, industrial controllers, and telecom line cards where data persistence across power cycles is mandatory.

For engineers reviewing the CY14B104L-ZS45XCT datasheet, CY14B104L-ZS45XCT pinout, CY14B104L-ZS45XCT application, or CY14B104L-ZS45XCT equivalent, key selection criteria include AutoStore timing (tSTORE = 12 ms), HSB hardware store busy signaling, VCAP capacitor sizing (0.1 µF), and compatibility with x8 bus interfaces in 48-ball FBGA packaging.

Technical Context

This nvSRAM integrates parallel SRAM and QuantumTrap nonvolatile storage per cell, enabling infinite SRAM read/write cycles and 200,000 STORE cycles. Its dual-mode operation supports both software-initiated (6-address sequence) and hardware-triggered (HSB pin) STORE/RECALL, with automatic power-loss detection via VCC voltage threshold (VSWITCH).

The device uses address lines A0–A18 for x8 configuration and supports byte-level control only in x16 variants; this CY14B104L variant operates exclusively in 512K × 8 mode with DQ0–DQ7 I/O, CE/OE/WE control, and dedicated VCAP and HSB pins for autonomous nonvolatile management.

Key Specifications

Pinout & Package

Package: 48-ball Fine-Pitch Ball Grid Array (FBGA), 6 mm × 8 mm, RoHS-compliant, suitable for high-density PCB layouts and automated assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Compared with STK14C88-45I and FM24V10-G, CY14B104L-ZS45XCT uniquely combines 4 Mbit density, integrated AutoStore voltage monitoring, HSB status signaling, and 0.1 µF VCAP simplicity-making it optimal for new designs demanding robust, low-component-count nonvolatile SRAM.

Availability

CY14B104L-ZS45XCT is available at Aetrix Electronics and suitable for industrial PLCs, telecom line cards, medical infusion pumps, and avionics flight recorders requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for CY14B104L-ZS45XCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets.

CY14B104L belongs to the QuantumTrap nvSRAM product line, engineered specifically to replace battery-backed SRAM in applications where maintenance-free, long-life, and deterministic power-loss data preservation are critical.

FAQ

What is the minimum VCAP capacitor value required for reliable AutoStore operation?

The CY14B104L-ZS45XCT requires a 0.1 µF ±20% X7R ceramic capacitor on the VCAP pin. This value ensures sufficient charge to complete the 12 ms STORE operation even at worst-case VCC dropout slope and temperature extremes. Larger values do not improve reliability and may slow power-up timing due to increased charging time.

Can the HSB pin be left unconnected if hardware STORE is not used?

Yes-the HSB pin has an internal weak pull-up and may be left floating if unused. When disconnected, it remains HIGH during normal operation and does not affect SRAM functionality. However, leaving it unconnected forfeits STORE status visibility and external hardware initiation capability.

Does the software STORE sequence require OE to be asserted LOW?

No-OE may be HIGH or LOW during the six-address software STORE sequence. The sequence relies solely on CE-controlled reads; OE state does not affect recognition. However, OE must remain stable during each read cycle to avoid bus contention or spurious transitions that could abort the sequence.

How does the CY14B104L-ZS45XCT handle partial STORE operations during rapid power cycling?

The device prevents incomplete STOREs by ignoring AutoStore and hardware STORE requests unless at least one SRAM write has occurred since the last STORE or RECALL. This ensures only modified data is saved, avoiding unnecessary wear on QuantumTrap cells and guaranteeing data consistency across successive short power events.