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Infineon Technologies CY14B104NA-BA20XI

Part No.:
CY14B104NA-BA20XI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
48-TFBGA
Datasheet:
AetrixCY14B104NA-BA20XI.pdf
Description:
IC NVSRAM 4MBIT PARALLEL 48FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,039

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Product details

Overview

CY14B104NA-BA20XI from Cypress Semiconductor is a 4-Mbit non-volatile SRAM (nvSRAM) with 256K × 16 organization, 20 ns access time, single 3 V (+20%, –10%) supply, and QuantumTrap non-volatile storage. It performs automatic STORE on power-down using an external VCAP capacitor and supports software/hardware-initiated STORE/RECALL. Used in industrial control systems requiring persistent memory without battery backup.

For engineers reviewing the CY14B104NA-BA20XI datasheet, CY14B104NA-BA20XI pinout, CY14B104NA-BA20XI application, or CY14B104NA-BA20XI equivalent, key selection criteria include ×16 bus interface support, HSB-controlled hardware STORE timing, VCAP-based AutoStore reliability, and 1 million STORE endurance with 20-year data retention.

Technical Context

This nvSRAM integrates standard SRAM cells with parallel QuantumTrap non-volatile elements per cell, enabling simultaneous STORE/RECALL across all 256K words. The architecture decouples volatile read/write performance (20 ns tAA) from non-volatile endurance (1M STORE cycles), eliminating wear leveling overhead.

STORE operations are triggered by power loss (via VCAP discharge below VSWITCH), HSB pin assertion, or software address sequence; RECALL occurs automatically at power-up or via software command. The HSB pin serves dual role: input to initiate STORE and open-drain output indicating busy state during STORE/RECALL.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 4 Mbit (256K × 16 organization)
Access Time 20 ns - guarantees fast SRAM-like read/write latency for real-time control loops
Supply Voltage 3.0 V ±10% - compatible with standard 3.3 V logic rails with margin for ripple
STORE Endurance 1 million cycles - defines maximum guaranteed non-volatile write lifetime
Data Retention 20 years at +85°C - ensures long-term data integrity without refresh or power
Operating Temperature –40°C to +85°C - qualified for industrial environments with thermal cycling
VCAP Requirement 0.1 µF ceramic capacitor - provides energy for single STORE during brownout

Pinout & Package

Package: 48-ball fine-pitch ball grid array (FBGA), RoHS-compliant, industrial temperature grade.

Pin/Terminal Circuit Role Design Meaning
A0–A17 Address Input 18-bit address bus for 256K-word addressing in ×16 mode
DQ0–DQ15 Bidirectional Data I/O 16-bit parallel data path; tristated when OE HIGH or during STORE/RECALL
CE, WE, OE Control Inputs Active-low chip enable, write enable, and output enable - standard SRAM timing interface
BHE/ BLE Byte Enable Independent control of upper/lower 8 bits in ×16 configuration
HSB I/O (Open-Drain) Initiates STORE when driven LOW; signals busy during STORE/RECALL as active-LOW output
VCAP Power Supply Connects to 0.1 µF capacitor; supplies energy for AutoStore during VCC dropout

Key Features

Feature Design Value
AutoStore on Power-Down Zero-software intervention STORE using VCAP capacitor - eliminates firmware dependency for fail-safe logging
Hardware STORE Control HSB pin enables deterministic, externally timed STORE initiation - critical for synchronized system shutdown
Software STORE/RECALL Address-sequence-triggered non-volatile operations - allows selective STORE without hardware signal routing
Parallel Cell Architecture All 256K words STORE/RECALL simultaneously - avoids sequential block copy delays seen in flash-based NVRAM
Infinite SRAM Cycles Unlimited read/write to volatile array - preserves SRAM performance while adding non-volatility

Applications

Industrial PLC Data Logging Medical Device Parameter Storage

Use Scenario: Storing runtime configuration and alarm history in programmable logic controllers during unexpected AC loss.

IC Role / Device Role / Timing Role: Non-volatile memory buffer that captures last-known state before power collapse, using AutoStore triggered by VCAP discharge.

Use Value: Eliminates need for supercapacitor hold-up circuitry or battery backup, reducing BOM cost and maintenance.

Use Scenario: Preserving calibration coefficients and patient treatment settings in portable infusion pumps between power cycles.

IC Role / Device Role / Timing Role: ×16 interface nvSRAM providing immediate recall at power-up and atomic STORE on shutdown via HSB.

Use Value: Ensures regulatory-compliant data persistence without risk of corruption during rapid power transitions.

Telecom Base Station Configuration Automotive ADAS Sensor Calibration

Use Scenario: Maintaining radio channel maps and RF tuning parameters across firmware updates and cold reboots in remote base stations.

IC Role / Device Role / Timing Role: High-reliability nvSRAM with 20-year retention, supporting software-controlled RECALL after boot and STORE after parameter change.

Use Value: Avoids EEPROM wear-out limitations and flash programming delays in mission-critical wireless infrastructure.

Use Scenario: Storing camera/LiDAR sensor offset corrections learned during vehicle operation, surviving engine-off periods.

IC Role / Device Role / Timing Role: Industrial-grade nvSRAM with –40°C to +85°C operation, using VCAP-backed AutoStore during ignition cycle transitions.

Use Value: Enables zero-latency recall of calibrated values at startup, improving ADAS system readiness time.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nvSRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
FM24V10-G 4-Mbit F-RAM (256K × 16), 3.3 V, 45 ns access, no VCAP required Lower STORE latency (sub-μs), but limited to +70°C max operating temperature Select for high-cycle logging where temperature stays ≤70°C and VCAP elimination simplifies layout
MB85RS4MT-Y 4-Mbit FRAM (256K × 16), 3 V, 25 ns access, built-in error correction Includes ECC and 10-year retention at +85°C; lacks HSB pin for hardware STORE control Select when system-level error resilience is prioritized over deterministic hardware-triggered STORE

Compared with FM24V10-G and MB85RS4MT-Y, CY14B104NA-BA20XI uniquely combines industrial temperature rating, HSB-driven hardware STORE, and VCAP-based AutoStore - making it optimal for systems requiring guaranteed non-volatile capture under uncontrolled power failure conditions.

Availability

CY14B104NA-BA20XI is available at Aetrix Electronics and suitable for industrial PLCs, medical infusion devices, telecom base stations, and automotive ADAS modules requiring stable component supply with long lifecycle assurance.

Supply support for CY14B104NA-BA20XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets.

The CY14B nvSRAM product line delivers battery-free non-volatility using QuantumTrap technology, targeting applications where data persistence must survive uncontrolled power loss without firmware intervention.

FAQ

What is the minimum VCAP capacitance required for reliable AutoStore operation?

The CY14B104NA-BA20XI requires a 0.1 µF ceramic capacitor on the VCAP pin to ensure successful AutoStore during VCC dropout. This value is specified in the DC Electrical Characteristics table (page 9 of datasheet 001-49918 Rev. *O) and validated for worst-case voltage droop profiles across industrial temperature range.

Does the HSB pin function identically in both ×8 and ×16 configurations?

No - the HSB pin is not available in the 44-pin TSOP II package for ×16 configuration (per Note 9, page 5). It is present and fully functional in the 48-ball FBGA (BA20XI) and 54-pin TSOP II packages, supporting both STORE initiation and busy indication in ×16 mode.

How does the device prevent unintended STORE operations during normal operation?

The CY14B104NA-BA20XI implements a write-latch mechanism: AutoStore and hardware STORE are ignored unless at least one SRAM write has occurred since the last STORE or RECALL cycle. This prevents spurious non-volatile writes during idle or read-only states.

Can software RECALL be performed while the system is running?

Yes - software RECALL is initiated by a specific address sequence and restores data from QuantumTrap cells to SRAM without requiring power cycle. However, SRAM access is inhibited during the RECALL operation, so timing must be coordinated to avoid system interruption.

CY14B104NA-BA20XI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
48-TFBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
NVSRAM
Technology:
NVSRAM (Non-Volatile SRAM)
Memory Size:
4Mbit
Memory Organization:
256K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
20ns
Access Time:
20 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-FBGA (6x10)

CY14B104NA-BA20XI FAQ

1.How can I place an order for CY14B104NA-BA20XI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY14B104NA-BA20XI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY14B104NA-BA20XI reliable?

The price and inventory of CY14B104NA-BA20XI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY14B104NA-BA20XI is usually 5 days.

3.What payment methods are accepted for CY14B104NA-BA20XI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY14B104NA-BA20XI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY14B104NA-BA20XI?

CY14B104NA-BA20XI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY14B104NA-BA20XI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY14B104NA-BA20XI?

For technical support, including CY14B104NA-BA20XI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY14B104NA-BA20XI requirements.

6.How does Aetrix verify that CY14B104NA-BA20XI is sourced from the original manufacturer or authorized distributors?

All CY14B104NA-BA20XI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY14B104NA-BA20XI meets industry standards.

7.What is the process for return or replacement of CY14B104NA-BA20XI?

All CY14B104NA-BA20XI units undergo pre-shipment inspection (PSI). If there is an issue with CY14B104NA-BA20XI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY14B104NA-BA20XI part is unused and in its original packaging.

Return procedure for CY14B104NA-BA20XI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY14B104NA-BA20XI Tags

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