Infineon Technologies CY14B104NA-BA20XIT
- Part No.:
- CY14B104NA-BA20XIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
CY14B104NA-BA20XIT.pdf
- Description:
- IC NVSRAM 4MBIT PARALLEL 48FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:2,138
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Product details
Overview
CY14B104NA-BA20XIT from Cypress Semiconductor is a 4-Mbit non-volatile SRAM (nvSRAM) with 256K × 16 organization, single 3 V (+20%, –10%) supply, 20 ns access time, and QuantumTrap non-volatile storage. It performs automatic STORE on power-down using an external VCAP capacitor and supports software/hardware-initiated STORE/RECALL. Used in industrial control systems requiring persistent memory without battery backup.
For engineers reviewing the CY14B104NA-BA20XIT datasheet, CY14B104NA-BA20XIT pinout, CY14B104NA-BA20XIT application, or CY14B104NA-BA20XIT equivalent, key selection criteria include ×16 bus interface support, HSB-controlled hardware STORE timing, VCAP-based AutoStore reliability, and industrial temperature operation without external power management circuitry.
Technical Context
This nvSRAM integrates standard SRAM cells with parallel QuantumTrap non-volatile elements per cell, enabling simultaneous STORE/RECALL across all 256K words. The architecture decouples volatile read/write performance (20 ns tAA) from non-volatile endurance (1 million STORE cycles, 20-year retention).
STORE operations are triggered by power loss (via VCAP discharge below VSWITCH), HSB pin assertion, or software address sequence; RECALL occurs automatically at power-up or via software command. Control logic inhibits SRAM access during STORE/RECALL, and write-latch tracking prevents spurious AutoStore cycles unless writes occur since last non-volatile operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4 Mbit (256K × 16 organization) |
| Access Time | 20 ns - guarantees SRAM read data valid within 20 ns of address/control setup |
| Supply Voltage | 3.0 V ±10% - operates directly from standard 3.3 V rail with 10% tolerance margin |
| Non-volatile Endurance | 1 million STORE cycles - defines maximum number of times data can be saved to QuantumTrap cells |
| Data Retention | 20 years at +85°C - ensures data integrity without refresh or power for two decades |
| Operating Temperature | –40°C to +85°C - qualified for industrial environments without derating |
| VCAP Capacitor | 0.1 µF - required external capacitor on VCAP pin to sustain AutoStore during VCC dropout |
Pinout & Package
Package: 48-ball fine-pitch ball grid array (FBGA), RoHS-compliant, industrial-grade thermal profile.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Input | 18-bit address bus for 256K-word addressing in ×16 mode |
| DQ0–DQ15 | Bidirectional Data I/O | 16-bit parallel data path; tristated when OE HIGH or during STORE/RECALL |
| CE, WE, OE | Control Inputs | Active-low chip enable, write enable, output enable - standard SRAM timing interface |
| BHE, BLE | Byte Enable | Independent control of upper/lower 8 bits in ×16 configuration |
| HSB | Hardware STORE Busy | Open-drain status signal: LOW during STORE execution; initiates STORE when driven LOW externally |
| VCAP | AutoStore Capacitor Supply | Internal regulator output; connects to 0.1 µF capacitor to power STORE during VCC failure |
| VCC, VSS | Power/Ground | Single 3 V supply and ground reference; no separate NV supply required |
Key Features
| Feature | Design Value |
|---|---|
| AutoStore on Power Loss | Zero-software, capacitor-backed STORE triggered automatically when VCC drops below VSWITCH |
| Software STORE/RECALL | Non-disruptive command sequences allow deterministic non-volatile save/restore without power cycle |
| Hardware STORE Initiation | HSB pin enables system-level control of STORE timing independent of software state |
| Write-Latch Protection | Prevents unnecessary STORE cycles unless SRAM writes occur since last STORE/RECALL |
| Industrial Temperature Range | Full functionality maintained from –40°C to +85°C without derating or external compensation |
Applications
| Industrial PLC Data Logging | Medical Device Configuration Storage |
|---|---|
|
Use Scenario: Storing real-time sensor calibration and operational history in programmable logic controllers during unexpected mains failure. IC Role / Device Role / Timing Role: Non-volatile SRAM providing immediate, deterministic STORE on brownout without firmware intervention. Use Value: Eliminates battery backup circuitry while guaranteeing 20-year data retention of critical process parameters. |
Use Scenario: Preserving patient-specific therapy settings and device self-test results in portable infusion pumps. IC Role / Device Role / Timing Role: ×16 interface nvSRAM serving as secure, fast-access configuration memory with power-fail resilience. Use Value: Enables instant RECALL at power-up, reducing boot time and ensuring treatment continuity after battery replacement. |
| Telecom Base Station Alarms | Automotive ADAS Event Recording |
|
Use Scenario: Capturing fault logs and network synchronization timestamps during AC power interruption in remote radio units. IC Role / Device Role / Timing Role: High-reliability nvSRAM acting as ring-buffer memory with hardware STORE trigger via HSB pin. Use Value: Achieves sub-20 ns SRAM access for live packet buffering while preserving alarm context across uncontrolled shutdowns. |
Use Scenario: Recording pre-crash vehicle dynamics (steering angle, brake pressure, camera frames) in advanced driver assistance systems. IC Role / Device Role / Timing Role: Low-latency, high-endurance memory storing transient safety-critical data before collision event. Use Value: Supports 1 million STORE cycles - sufficient for full vehicle lifetime of incident logging without wear-out concerns. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FM24V10-G | 4-Mbit F-RAM (1M × 4), 3.3 V, 45 ns access, no VCAP capacitor required | Lower power STORE, unlimited endurance, but slower access and different bus width | Select for ultra-low-power, high-cycle-count logging where 45 ns latency is acceptable |
| MB85RS4MT-Y | 4-Mbit FRAM (256K × 16), 3 V, 25 ns access, integrated voltage detector, no external capacitor | Faster than F-RAM alternatives but lacks HSB pin for hardware STORE control | Select when deterministic hardware-triggered STORE is not required and board space for VCAP is constrained |
Compared with FM24V10-G and MB85RS4MT-Y, CY14B104NA-BA20XIT provides the fastest access (20 ns), explicit HSB-driven STORE control, and proven 20-year retention - making it optimal for industrial systems demanding both speed and guaranteed power-loss response.
Availability
CY14B104NA-BA20XIT is available at Aetrix Electronics and suitable for industrial PLCs, medical instrumentation, and telecom infrastructure requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.
Supply support for CY14B104NA-BA20XIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets.
CY14B104NA belongs to the QuantumTrap nvSRAM product line, engineered specifically for applications needing battery-free, fast-access non-volatility with deterministic power-loss response in harsh environments.
FAQ
What is the role of the VCAP pin and what capacitor value is required?
The VCAP pin supplies regulated power to execute the AutoStore operation during VCC dropout. A 0.1 µF ceramic capacitor must be placed between VCAP and VSS. This capacitor is charged during normal operation and discharges to complete one STORE cycle when VCC falls below VSWITCH. Using a smaller capacitor risks incomplete STORE and data corruption; larger values do not improve reliability and may delay power-up RECALL.
How does the HSB pin function during STORE operations?
HSB is an open-drain pin that goes LOW during any active STORE (AutoStore, Hardware, or Software). When driven LOW externally, it initiates a conditional STORE after tDELAY - only if a write has occurred since the last STORE/RECALL. After completion, HSB is actively driven HIGH for tHHHD, then held HIGH by an internal 100 kΩ pull-up. Systems monitor HSB to avoid issuing new commands during STORE execution.
Can CY14B104NA-BA20XIT operate in ×8 mode?
No. CY14B104NA is factory-configured for 256K × 16 organization only. The CY14B104LA variant supports 512K × 8. Pinouts, address range (A0–A17), and data bus width (DQ0–DQ15) are fixed for ×16 operation. Attempting ×8 use would result in incorrect addressing and data misalignment due to hardwired internal decoding.
What happens if AutoStore is enabled but no VCAP capacitor is installed?
If AutoStore is enabled (default state) and no VCAP capacitor is connected, the device attempts STORE on power loss but lacks energy to complete it. This causes partial programming of QuantumTrap cells, resulting in corrupted data upon subsequent RECALL. The datasheet mandates disabling AutoStore via software sequence if VCAP is omitted - otherwise, reliable non-volatile operation cannot be guaranteed.
CY14B104NA-BA20XIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 48-TFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 20ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-FBGA (6x10)
CY14B104NA-BA20XIT FAQ
1.How can I place an order for CY14B104NA-BA20XIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY14B104NA-BA20XIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY14B104NA-BA20XIT reliable?
The price and inventory of CY14B104NA-BA20XIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY14B104NA-BA20XIT is usually 5 days.
3.What payment methods are accepted for CY14B104NA-BA20XIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY14B104NA-BA20XIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY14B104NA-BA20XIT?
CY14B104NA-BA20XIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY14B104NA-BA20XIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY14B104NA-BA20XIT?
For technical support, including CY14B104NA-BA20XIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY14B104NA-BA20XIT requirements.
6.How does Aetrix verify that CY14B104NA-BA20XIT is sourced from the original manufacturer or authorized distributors?
All CY14B104NA-BA20XIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY14B104NA-BA20XIT meets industry standards.
7.What is the process for return or replacement of CY14B104NA-BA20XIT?
All CY14B104NA-BA20XIT units undergo pre-shipment inspection (PSI). If there is an issue with CY14B104NA-BA20XIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY14B104NA-BA20XIT part is unused and in its original packaging.
Return procedure for CY14B104NA-BA20XIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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