Infineon Technologies CY14B104NA-BA25I
- Part No.:
- CY14B104NA-BA25I
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
CY14B104NA-BA25I.pdf
- Description:
- IC NVSRAM 4MBIT PARALLEL 48FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:2,162
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Product details
Overview
CY14B104NA-BA25I from Cypress Semiconductor is a 4-Mbit non-volatile SRAM (nvSRAM) with 256K × 16 organization, single 3 V (+20%, –10%) supply, 25 ns access time, and QuantumTrap non-volatile storage. It performs automatic STORE on power-down using an external VCAP capacitor and supports software/hardware-initiated STORE/RECALL. Used in industrial control systems requiring persistent memory without battery backup.
For engineers reviewing the CY14B104NA-BA25I datasheet, CY14B104NA-BA25I pinout, CY14B104NA-BA25I application, or CY14B104NA-BA25I equivalent, key selection criteria include ×16 bus interface support, HSB-controlled hardware STORE timing, VCAP-based AutoStore reliability, and industrial temperature operation (–40°C to +85°C).
Technical Context
The CY14B104NA-BA25I integrates standard SRAM array (2048 × 2048) with parallel QuantumTrap non-volatile elements per cell, enabling simultaneous STORE/RECALL across all 256K words. Its dual-mode operation-SRAM read/write at full speed and atomic non-volatile transfer-relies on internal power switching between VCC and VCAP during voltage collapse.
STORE is triggered by power loss (AutoStore), HSB pin assertion, or software address sequence; RECALL occurs automatically at power-up or via software command. The device inhibits SRAM access during STORE/RECALL cycles and uses BHE/BLE for byte-select control in ×16 mode, with HSB serving as both input request and open-drain busy indicator.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 4 Mbit organized as 256K × 16 - supports 16-bit microprocessor data bus without glue logic. |
| Access Time | 25 ns - enables direct interfacing with legacy 40 MHz bus systems without wait states. |
| Supply Voltage | 3.0 V ±10% - compatible with standard 3.3 V LDOs with 10% tolerance margin; no separate VDDQ required. |
| Data Retention | 20 years - guaranteed non-volatile data hold without refresh or external power after STORE completion. |
| STORE Endurance | 1 million cycles - defines maximum number of reliable STORE operations before QuantumTrap wear-out. |
| Operating Temperature | –40°C to +85°C - qualified for industrial environments including factory automation and transportation electronics. |
| VCAP Requirement | 0.1 µF ceramic capacitor - provides sufficient charge for one complete STORE operation during VCC dropout. |
Pinout & Package
Package: 48-ball fine-pitch ball grid array (FBGA), RoHS-compliant, 7 mm × 9 mm footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Input | 18-bit address bus for 256K-word addressing; A17 is MSB in ×16 mode. |
| DQ0–DQ15 | Bidirectional Data I/O | 16-bit parallel data path; tristated when OE HIGH or during STORE/RECALL. |
| CE, WE, OE | Control Inputs | Active-low chip enable, write enable, output enable - standard SRAM timing interface. |
| BHE, BLE | Byte Enable Inputs | Independent control of upper/lower 8 bits in ×16 mode; required for partial-word writes. |
| HSB | Hardware STORE Busy | Open-drain status pin: driven LOW during STORE; pulled LOW externally to initiate hardware STORE. |
| VCAP | AutoStore Capacitor Supply | Internal regulator charges external 0.1 µF capacitor; supplies energy for STORE during VCC failure. |
Key Features
| Feature | Design Value |
|---|---|
| Hands-off AutoStore | Zero-software intervention STORE on power loss - eliminates firmware dependency for critical data persistence. |
| Software STORE/RECALL | Address-sequence-triggered non-volatile transfer - enables deterministic, timed data capture in real-time systems. |
| Hardware STORE via HSB | External pin-initiated STORE with busy indication - allows system-level coordination of data save events (e.g., emergency shutdown). |
| QuantumTrap Technology | Cell-level non-volatility with infinite SRAM reads/writes and 1M STORE endurance - decouples volatile performance from non-volatile wear limits. |
| Industrial Temp Range | –40°C to +85°C operation - validated for use in uncontrolled ambient environments without thermal derating. |
Applications
| Industrial PLC Data Logging | Medical Device Configuration Storage |
|---|---|
|
Use Scenario: Storing runtime parameters and alarm history in programmable logic controllers during unexpected AC mains failure. IC Role / Device Role / Timing Role: Non-volatile SRAM providing immediate, seamless STORE upon brownout detection without CPU involvement. Use Value: Prevents loss of last-known machine state and sensor thresholds, enabling safe restart and regulatory audit trail continuity. |
Use Scenario: Preserving calibration coefficients and user preferences in portable ultrasound equipment between battery swaps. IC Role / Device Role / Timing Role: ×16 nvSRAM acting as persistent configuration register bank with sub-25 ns read access for real-time signal processing. Use Value: Eliminates boot-time recalibration delays and avoids external EEPROM wear-out limitations in high-reliability diagnostic tools. |
| Telecom Base Station Control Memory | Railway Signaling System State Backup |
|
Use Scenario: Caching FPGA configuration bitstreams and protocol stack variables in remote radio units exposed to wide temperature swings. IC Role / Device Role / Timing Role: Industrial-grade nvSRAM with 20-year retention serving as fail-safe shadow memory for volatile configuration registers. Use Value: Ensures rapid reinitialization after power interruption without network resynchronization delay or service outage. |
Use Scenario: Capturing interlocking logic states in European Train Control System (ETCS) Level 2 balise readers during track-side power glitches. IC Role / Device Role / Timing Role: Hardware STORE-enabled nvSRAM responding to HSB assertion from watchdog circuit during voltage anomaly detection. Use Value: Guarantees deterministic, sub-millisecond STORE completion before safety-critical logic reset - meeting SIL-4 functional safety requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nvSRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FM24V10-G | 4-Mbit F-RAM (128K × 32), 3.3 V, 45 ns access, no VCAP required, unlimited STORE endurance. | Lacks hardware STORE trigger (HSB) and AutoStore; relies on software polling or external power-fail detection. | Select for ultra-high STORE cycle count (>1012) where deterministic power-loss response is less critical than endurance. |
| AS4C4M16SA-6BIN | 4-Mbit parallel SRAM (256K × 16), 3.3 V, 6 ns access, volatile only - requires external battery or capacitor + controller for non-volatility. | No integrated non-volatile element; adds board area, BOM cost, and firmware complexity for STORE/RECALL logic. | Select only if nanosecond-level access dominates design priority and external non-volatility management is already implemented. |
Compared with FM24V10-G and AS4C4M16SA-6BIN, CY14B104NA-BA25I uniquely delivers hardware-triggered STORE, hands-off AutoStore, and verified 20-year retention in a single-package solution - reducing system-level validation burden for industrial safety-critical applications.
Availability
CY14B104NA-BA25I is available at Aetrix Electronics and suitable for industrial PLCs, medical imaging devices, and railway signaling systems requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.
Supply support for CY14B104NA-BA25I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets.
The CY14B nvSRAM product line targets applications needing battery-free non-volatility with SRAM speed - specifically engineered for deterministic STORE/RECALL in mission-critical infrastructure where power integrity cannot be assumed.
FAQ
What is the function of the VCAP pin, and what capacitor value is required?
The VCAP pin connects to an external 0.1 µF ceramic capacitor that stores charge during normal operation. When VCC drops below VSWITCH (~2.5 V), the internal regulator isolates VCAP and uses its stored energy to complete one full STORE operation. Using a smaller capacitor risks incomplete STORE and data corruption; larger values do not improve reliability and may slow charging.
How does the HSB pin operate during STORE initiation and completion?
HSB is an open-drain pin with internal 100 kΩ weak pull-up. When driven LOW externally, it initiates a conditional STORE after tDELAY (max 100 ns). During STORE execution, HSB is actively driven LOW. Upon completion, it is driven HIGH for tHHHD (min 10 ns), then held HIGH by the internal pull-up. Systems must monitor HSB to avoid issuing new commands during busy periods.
Can CY14B104NA-BA25I be used in ×8 mode, or is it strictly ×16?
CY14B104NA is exclusively 256K × 16 organized - it does not support ×8 operation. The CY14B104LA variant is the 512K × 8 version. Pin assignments, address range (A0–A17), and data bus width (DQ0–DQ15) are fixed for ×16; attempting ×8 usage will result in incorrect addressing and data corruption.
What happens if AutoStore is enabled but no capacitor is connected to VCAP?
If AutoStore is enabled (default state) and no capacitor is connected to VCAP, the device attempts STORE during power loss but lacks sufficient energy - resulting in incomplete transfer and corrupted data in the non-volatile array. The datasheet mandates disabling AutoStore via software sequence if VCAP is omitted, and Cypress confirms this condition invalidates data retention guarantees.
CY14B104NA-BA25I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 48-TFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 25ns
- Access Time:
- 25 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-FBGA (6x10)
CY14B104NA-BA25I FAQ
1.How can I place an order for CY14B104NA-BA25I through Aetrix?
Please submit a Request for Quotation (RFQ) for CY14B104NA-BA25I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY14B104NA-BA25I reliable?
The price and inventory of CY14B104NA-BA25I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY14B104NA-BA25I is usually 5 days.
3.What payment methods are accepted for CY14B104NA-BA25I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY14B104NA-BA25I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY14B104NA-BA25I?
CY14B104NA-BA25I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY14B104NA-BA25I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY14B104NA-BA25I?
For technical support, including CY14B104NA-BA25I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY14B104NA-BA25I requirements.
6.How does Aetrix verify that CY14B104NA-BA25I is sourced from the original manufacturer or authorized distributors?
All CY14B104NA-BA25I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY14B104NA-BA25I meets industry standards.
7.What is the process for return or replacement of CY14B104NA-BA25I?
All CY14B104NA-BA25I units undergo pre-shipment inspection (PSI). If there is an issue with CY14B104NA-BA25I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY14B104NA-BA25I part is unused and in its original packaging.
Return procedure for CY14B104NA-BA25I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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