Infineon Technologies CY14B104NA-BA25XI

Overview

CY14B104NA-BA25XI from Cypress Semiconductor is a 4-Mbit non-volatile SRAM (nvSRAM) organized as 256K × 16, operating at 3 V ±10%, with 25 ns access time, AutoStore on power-down, and QuantumTrap non-volatile storage. It performs STORE/RECALL operations via hardware pin (HSB), software command, or automatic power-loss detection-used in industrial controllers requiring persistent memory without external backup batteries.

For engineers reviewing the CY14B104NA-BA25XI datasheet, CY14B104NA-BA25XI pinout, CY14B104NA-BA25XI application, or CY14B104NA-BA25XI equivalent, key selection criteria include ×16 bus width support, HSB-controlled STORE timing, VCAP capacitor dependency for AutoStore, and compatibility with legacy SRAM interfaces in PLCs and metering systems.

Technical Context

This nvSRAM integrates standard SRAM cells with parallel QuantumTrap non-volatile elements per cell, enabling simultaneous STORE/RECALL across all 256K words. It supports three STORE initiation modes: AutoStore (triggered by VCC drop below VSWITCH), Hardware STORE (via HSB pin assertion), and Software STORE (address-sequence command).

RECALL occurs automatically on power-up or via software command; both operations inhibit SRAM read/write access. The device guarantees 1 million STORE cycles and 20-year data retention, with BHE/BLE byte enables active only in ×16 configuration and HSB absent in 44-pin TSOP II packages.

Key Specifications

Pinout & Package

Package: 48-ball FBGA (Fine-Pitch Ball Grid Array), RoHS-compliant, 6 mm × 8 mm footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nvSRAM applications.

Compared with STK14CA8-3LF35I and FM24V10-G, CY14B104NA-BA25XI uniquely balances ×16 interface efficiency, integrated AutoStore autonomy, and industrial-grade retention-making it optimal for SRAM-drop-in upgrades where deterministic STORE timing and minimal external components are critical.

Availability

CY14B104NA-BA25XI is available at Aetrix Electronics and suitable for programmable logic controllers, smart electricity meters, railway signaling systems, and industrial HMI displays requiring stable component supply and long-term obsolescence management.

Supply support for CY14B104NA-BA25XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and IoT applications.

CY14B104NA belongs to the QuantumTrap nvSRAM product line, engineered to replace battery-backed SRAM in mission-critical systems where maintenance-free, long-retention, and SRAM-compatible timing are mandatory.

FAQ

What is the role of the VCAP pin, and what capacitor value is required?

The VCAP pin connects to an external 0.1 µF ceramic capacitor that stores energy used exclusively for AutoStore during VCC dropout. This capacitor must be placed within 10 mm of the VCAP pin with low-inductance routing. If omitted, AutoStore fails and may corrupt data; disabling AutoStore via software sequence is mandatory in capacitor-less designs.

How does the HSB pin function during STORE operations?

HSB serves dual roles: as an input to initiate Hardware STORE when pulled LOW externally, and as an open-drain output driven LOW by the device during any active STORE (AutoStore, Hardware, or Software). After completion, HSB is actively driven HIGH for tHHHD (≤100 ns), then held HIGH by a 100 kΩ internal pull-up.

Can CY14B104NA-BA25XI operate in ×8 mode?

No. CY14B104NA is strictly a 256K × 16 device. The CY14B104LA variant supports 512K × 8. Pinout, address width (A0–A17), and data bus (DQ0–DQ15 with BHE/BLE) are fixed for ×16 operation; attempting ×8 use violates electrical and functional specifications.

What happens if a write occurs during AutoStore execution?

SRAM write operations are inhibited throughout STORE execution regardless of initiation method. If a write is attempted while HSB is LOW, the device ignores the write cycle and holds DQ lines in high-impedance state until HSB returns HIGH and tLZHSB (≥100 ns) elapses - ensuring atomicity of non-volatile storage.