Infineon Technologies CY14B104NA-BA25XIT

Overview

CY14B104NA-BA25XIT from Cypress Semiconductor is a 4-Mbit non-volatile SRAM (nvSRAM) with 256K × 16 organization, single 3 V (+20%, –10%) supply, 25 ns access time, and QuantumTrap non-volatile storage. It performs automatic STORE on power-down using an external VCAP capacitor and supports software/hardware-controlled STORE/RECALL. Used in industrial control systems requiring persistent memory without battery backup.

For engineers reviewing the CY14B104NA-BA25XIT datasheet, CY14B104NA-BA25XIT pinout, CY14B104NA-BA25XIT application, or CY14B104NA-BA25XIT equivalent, key selection criteria include ×16 bus interface support, HSB pin availability for hardware STORE signaling, VCAP capacitor sizing, AutoStore enable/disable behavior, and compatibility with industrial temperature operation (–40°C to +85°C).

Technical Context

This nvSRAM integrates standard SRAM cells with parallel QuantumTrap non-volatile elements per cell, enabling simultaneous STORE/RECALL across all 256K words. The architecture decouples volatile read/write (infinite cycles) from non-volatile STORE (1 million cycles) and RECALL (infinite cycles), with data retention guaranteed for 20 years.

AutoStore triggers when VCC drops below VSWITCH (~2.7 V), isolating VCAP to power the STORE sequence. Hardware STORE is initiated by driving HSB low, while software STORE uses a specific address write sequence. BHE/ BLE pins enable byte-level control in ×16 mode, and HSB serves dual role as input request and open-drain busy indicator.

Key Specifications

Pinout & Package

Package: 48-ball fine-pitch ball grid array (FBGA), RoHS-compliant, industrial-grade thermal profile.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nvSRAM applications.

Compared with STK14C88-3AJ5F and FM24CL16B-G, CY14B104NA-BA25XIT uniquely delivers parallel ×16 interface, deterministic hardware STORE via HSB, and 25 ns access - making it optimal for real-time industrial MPU systems needing fast, autonomous, battery-free non-volatility.

Availability

CY14B104NA-BA25XIT is available at Aetrix Electronics and suitable for industrial PLCs, medical diagnostic equipment, and telecom infrastructure requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for CY14B104NA-BA25XIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets.

CY14B104NA belongs to the QuantumTrap nvSRAM product line, engineered specifically for battery-free, high-endurance, fast-access non-volatile storage in mission-critical embedded systems.

FAQ

What is the function of the VCAP pin, and what capacitor value is required?

The VCAP pin connects to a 0.1 µF ceramic capacitor that stores charge from VCC to power the AutoStore operation during power loss. This capacitor must be placed as close as possible to the VCAP pin with low-inductance routing. Using a smaller value risks incomplete STORE; larger values extend STORE time but do not improve reliability. No external charging circuitry is needed - the device includes an internal regulator.

How does the HSB pin operate during STORE, and is an external pull-up required?

HSB is an open-drain pin internally pulled up with ~100 kΩ. During STORE (any initiation method), it is actively driven LOW; upon completion, it is driven HIGH for tHHHD (~100 ns), then held HIGH by the weak internal pull-up. An external pull-up is optional but recommended for noise immunity in noisy industrial environments. Driving HSB LOW externally initiates hardware STORE only if a write has occurred since last STORE/RECALL.

Can CY14B104NA-BA25XIT be used in ×8 mode, or is it strictly ×16?

CY14B104NA is factory-configured for 256K × 16 organization and cannot operate in ×8 mode. The CY14B104LA variant is the ×8 version (512K × 8). Pinouts, address mapping (A0–A17), and data bus width (DQ0–DQ15) are fixed for ×16. Attempting ×8 usage would result in incorrect addressing and data corruption due to mismatched memory geometry and BHE/ BLE dependency.

What happens if AutoStore is enabled but no capacitor is connected to VCAP?

If AutoStore is enabled (default state) and no capacitor is connected to VCAP, the device attempts STORE on power loss using insufficient residual charge - resulting in incomplete or corrupted data transfer to QuantumTrap cells. The datasheet explicitly warns this causes nvSRAM data corruption. To prevent this, AutoStore must be disabled via the software sequence on page 8 of the datasheet before VCAP is left unconnected.