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Infineon Technologies CY14B104NA-BA45XET
- Part No.:
- CY14B104NA-BA45XET
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
CY14B104NA-BA45XET.pdf
- Description:
- IC NVSRAM 4MBIT PARALLEL 48FBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,403
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Product details
Overview
CY14B104NA-BA45XET from Cypress Semiconductor is an automotive-grade 4-Mbit (256K × 16) non-volatile SRAM with QuantumTrap technology, operating at 45 ns access time, single 3.3 V supply (+0.3 V), and –40 °C to +125 °C extended temperature range. It integrates volatile SRAM and non-volatile storage in each cell for seamless STORE/RECALL, used in engine control units, ADAS domain controllers, and automotive infotainment systems requiring persistent memory without external backup.
For engineers reviewing the CY14B104NA-BA45XET datasheet, CY14B104NA-BA45XET pinout, CY14B104NA-BA45XET application, or CY14B104NA-BA45XET equivalent, key selection criteria include AutoStore capacitor support (VCAP), HSB-driven hardware STORE timing, software-controlled STORE/RECALL address sequences, and Automotive-E endurance (100K STORE cycles).
Technical Context
The CY14B104NA-BA45XET implements a dual-cell architecture: standard fast SRAM (256K × 16) paired with embedded QuantumTrap non-volatile elements per bit. STORE operations transfer data from SRAM to non-volatile cells either automatically on power-down (via VCAP-supplied energy), via HSB pin assertion, or through six-address software sequence.
RECALL restores data from non-volatile cells to SRAM on power-up or via software command. The device inhibits SRAM access during STORE/RECALL, uses byte enables (BHE/ BLE) for 16-bit word masking, and monitors write activity to prevent spurious AutoStore-only initiating STORE if ≥1 write occurred since last STORE/RECALL cycle.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4 Mbit (256K × 16 words), enabling direct replacement of standard 256K × 16 SRAMs without bus reconfiguration. |
| Access Time | 45 ns - defines maximum clock-to-data valid delay in read cycles under Automotive-E conditions (–40 °C to +125 °C, VCC = 3.3 V ±0.3 V). |
| Supply Voltage | 3.3 V +0.3 V only - mandates strict regulation; no 3.0 V operation permitted, unlike Automotive-A variants. |
| Data Retention | 1 year at –40 °C to +125 °C - guarantees non-volatile data survival over full Automotive-E thermal profile without refresh. |
| STORE Endurance | 100K cycles - specifies maximum guaranteed STORE operations before QuantumTrap wear-out in extended-temperature applications. |
| VCAP Requirement | 0.1 µF capacitor on VCAP pin - supplies energy for AutoStore during VCC collapse; omission disables automatic power-loss STORE. |
| Operating Temperature | –40 °C to +125 °C - qualified per AEC-Q100 Grade 2, supporting under-hood and transmission-control environments. |
Pinout & Package
Package: 44-pin TSOP II (Type II), RoHS-compliant, surface-mount, 12.0 mm × 20.0 mm footprint. Not compatible with 48-ball FBGA variant (CY14B104NA-BA45XIT); HSB pin omitted in this package.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Input | 18-bit address bus selecting one of 256K locations; A16/A17 are NC in 4-Mbit configuration but reserved for future density scaling. |
| DQ0–DQ15 | Bidirectional Data I/O | 16-bit parallel data path; tristated when OE HIGH or during STORE/RECALL; supports byte-wide access via BHE/ BLE. |
| WE, CE, OE | Control Inputs (Active LOW) | Standard SRAM control triad: WE enables write, CE selects chip, OE enables output drivers; all must meet tHZWE/tLZCE/tLZOE timing during STORE inhibition. |
| BHE, BLE | Byte Enable Inputs | Independent 8-bit masking: BHE controls DQ15–DQ8, BLE controls DQ7–DQ0; allows partial-word writes without read-modify-write. |
| VCC, VSS | Power & Ground | Single 3.3 V supply; VSS must be low-inductance ground plane connection to minimize noise-induced STORE corruption. |
| VCAP | AutoStore Capacitor Terminal | Internal regulator charges external 0.1 µF capacitor; voltage drop below VSWITCH triggers AutoStore using stored charge - no external power source required. |
Key Features
| Feature | Design Value |
|---|---|
| QuantumTrap Non-Volatile Cell | Embedded per-bit non-volatility eliminates need for external EEPROM/NVRAM and battery backup circuitry. |
| Three-Mode STORE Initiation | Hardware (HSB pin), software (6-address sequence), or hands-off AutoStore on VCC collapse - provides design flexibility for safety-critical and low-power use cases. |
| Write-Activity Gating | AutoStore and hardware STORE suppressed unless ≥1 SRAM write occurred since last STORE/RECALL - prevents unnecessary wear and false triggers. |
| HSB Busy Signal | Open-drain status pin indicates STORE/RECALL progress; drives LOW during operation and returns HIGH after tHHHD + internal weak pull-up - enables system-level synchronization. |
| Automotive-E Qualification | Validated for –40 °C to +125 °C operation with 100K STORE cycles and 1-year data retention - meets AEC-Q100 Grade 2 requirements for powertrain and chassis modules. |
Applications
| Engine Control Unit (ECU) | Advanced Driver Assistance Systems (ADAS) |
|---|---|
|
Use Scenario: Storing real-time calibration tables, fault logs, and adaptive learning parameters across ignition cycles in gasoline/diesel ECUs. IC Role / Device Role: Non-volatile scratchpad memory retaining critical runtime data without battery or supercapacitor support. Use Value: Eliminates external NVRAM and associated power-fail detection circuitry while guaranteeing 1-year data retention at 125 °C ambient. |
Use Scenario: Caching sensor fusion metadata and lane-marking history in camera-based forward collision warning modules. IC Role / Device Role: High-speed, failure-resistant memory buffer between image processor and long-term flash storage. Use Value: Enables deterministic RECALL within tHRECALL (≤20 ms) on cold boot, ensuring zero-latency initialization of safety-critical perception stacks. |
| Transmission Control Module (TCM) | Automotive Infotainment Head Unit |
|
Use Scenario: Preserving gear-shifting adaptation profiles and torque converter lock-up history during vehicle shutdown. IC Role / Device Role: Persistent SRAM acting as shadow memory for microcontroller's volatile RAM during power transitions. Use Value: Supports 100K STORE cycles over 15-year service life, exceeding typical TCM duty cycles while avoiding EEPROM write latency bottlenecks. |
Use Scenario: Holding UI state, recent media playlist, and Bluetooth pairing context across soft resets and firmware updates. IC Role / Device Role: Low-power, pin-compatible SRAM drop-in with built-in non-volatility for rapid resume-from-reset behavior. Use Value: Achieves sub-100 ms UI restoration after power cycling by recalling cached state directly into MCU SRAM via hardware RECALL on VCC ramp. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nvSRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY14B104NA-BA25XET | 25 ns access time, same 4-Mbit density and Automotive-E rating, identical pinout and command set. | Required where <25 ns SRAM read latency is mandated (e.g., high-frequency CAN FD logging buffers). | Select when system timing budget demands faster tAA; otherwise, BA45XET offers optimal cost/performance balance for most ECU/ADAS use cases. |
| FM24V10-G | F-RAM-based 1-Mbit (128K × 8), 3.3 V, –40 °C to +85 °C, unlimited endurance, but lower density and no AutoStore capacitor interface. | Suitable for lower-density, high-endurance logging in cabin controllers where extended temperature is not required. | Choose for infinite WRITE/STORE cycles in benign environments; avoid where 125 °C operation or 4-Mbit capacity is mandatory. |
Compared with CY14B104NA-BA25XET, the BA45XET trades 20 ns slower access for lower power and cost, while FM24V10-G offers superior endurance but lacks AutoStore and fails to meet Automotive-E thermal specs - making BA45XET the only solution satisfying full AEC-Q100 Grade 2, 4-Mbit, and hands-off power-loss STORE requirements.
Availability
CY14B104NA-BA45XET is available at Aetrix Electronics and suitable for engine control units, ADAS domain controllers, and transmission control modules requiring stable component supply across automotive production lifecycles.
Supply support for CY14B104NA-BA45XET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for automotive, industrial, and IoT applications, with global manufacturing and qualification infrastructure.
The CY14B series delivers automotive-qualified nvSRAMs optimized for safety-critical systems needing deterministic STORE/RECALL, eliminating external backup components while meeting AEC-Q100 stress test requirements.
FAQ
Can CY14B104NA-BA45XET operate at 3.0 V?
No. This Automotive-E variant is specified exclusively for 3.3 V ±0.3 V operation (3.0 V to 3.6 V). Operation outside this range violates datasheet limits and may cause STORE corruption or premature QuantumTrap wear. The Automotive-A version (CY14B104NA-BA45XAT) supports 3.0 V ±10%, but not this part number.
Is the VCAP capacitor mandatory for all STORE modes?
VCAP is mandatory only for AutoStore on power-down. Hardware STORE (via HSB) and software STORE execute using VCC power and do not require VCAP. However, omitting VCAP disables the primary fail-safe STORE mechanism - leaving the system vulnerable to data loss during uncontrolled power collapse.
What happens if the software STORE sequence is interrupted?
If any address in the six-read sequence (0x4E38 → 0xB1C7 → 0x83E0 → 0x7C1F → 0x703F → 0x8FC0) is skipped, misordered, or overlapped with another access, the sequence aborts and no STORE initiates. The device resumes normal SRAM operation immediately, with no side effects or state corruption.
Does CY14B104NA-BA45XET support byte-write masking without affecting adjacent bytes?
Yes. Using BHE (DQ15–DQ8) and BLE (DQ7–DQ0) enables independent 8-bit writes. When only BLE is asserted LOW and BHE is HIGH, only DQ7–DQ0 are written; SRAM cells for DQ15–DQ8 retain prior values - no read-modify-write overhead is required.
CY14B104NA-BA45XET Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 48-TFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-FBGA (6x10)
CY14B104NA-BA45XET FAQ
1.How can I place an order for CY14B104NA-BA45XET through Aetrix?
Please submit a Request for Quotation (RFQ) for CY14B104NA-BA45XET on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY14B104NA-BA45XET reliable?
The price and inventory of CY14B104NA-BA45XET are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY14B104NA-BA45XET is usually 5 days.
3.What payment methods are accepted for CY14B104NA-BA45XET?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY14B104NA-BA45XET transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY14B104NA-BA45XET?
CY14B104NA-BA45XET orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY14B104NA-BA45XET order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY14B104NA-BA45XET?
For technical support, including CY14B104NA-BA45XET datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY14B104NA-BA45XET requirements.
6.How does Aetrix verify that CY14B104NA-BA45XET is sourced from the original manufacturer or authorized distributors?
All CY14B104NA-BA45XET products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY14B104NA-BA45XET meets industry standards.
7.What is the process for return or replacement of CY14B104NA-BA45XET?
All CY14B104NA-BA45XET units undergo pre-shipment inspection (PSI). If there is an issue with CY14B104NA-BA45XET, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY14B104NA-BA45XET part is unused and in its original packaging.
Return procedure for CY14B104NA-BA45XET:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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