Infineon Technologies CY14B104NA-BA45XI

Overview

CY14B104NA-BA45XI from Cypress Semiconductor is a 4-Mbit non-volatile SRAM (nvSRAM) organized as 256K × 16, featuring QuantumTrap non-volatile storage, 45 ns access time, single 3 V (+20% / –10%) supply operation, and industrial temperature range (–40°C to +85°C). It performs automatic STORE on power-down using an external VCAP capacitor and supports software/hardware-initiated STORE/RECALL for data persistence in mission-critical embedded systems.

For engineers reviewing the CY14B104NA-BA45XI datasheet, CY14B104NA-BA45XI pinout, CY14B104NA-BA45XI application, or CY14B104NA-BA45XI equivalent, key selection considerations include ×16 bus width support, HSB-controlled hardware STORE capability, VCAP-based AutoStore timing, and compatibility with legacy SRAM interfaces requiring infinite write endurance and 20-year data retention.

Technical Context

This nvSRAM integrates standard SRAM cells with parallel QuantumTrap non-volatile elements per cell, enabling simultaneous STORE/RECALL across all 256K words. The architecture decouples volatile read/write performance (45 ns tAA) from non-volatile endurance (1 million STORE cycles, 20-year retention).

STORE operations are triggered by power loss (via VCAP discharge below VSWITCH), HSB pin assertion, or software address sequence; RECALL occurs automatically at power-up or via software command. Control logic inhibits SRAM access during STORE/RECALL, and write-latch tracking prevents spurious AutoStore cycles unless writes occur since last persistence event.

Key Specifications

Pinout & Package

Package: 48-ball fine-pitch ball grid array (FBGA), RoHS-compliant, 7 mm × 9 mm footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar non-volatile SRAM applications.

Compared with FM24V10-G and MB85RS4MT, CY14B104NA-BA45XI uniquely delivers hands-off AutoStore with precise VCAP-powered timing, HSB-driven hardware synchronization, and full SRAM timing transparency-making it optimal for legacy SRAM drop-in upgrades where power-fail predictability and interface compatibility are mandatory.

Availability

CY14B104NA-BA45XI is available at Aetrix Electronics and suitable for industrial PLC data logging, medical device configuration storage, and avionics black box memory requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for CY14B104NA-BA45XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets.

The CY14B nvSRAM product line targets applications demanding seamless SRAM compatibility with guaranteed non-volatile data retention-specifically engineered for systems where battery backup is prohibited or unreliable.

FAQ

What is the minimum VCAP capacitance required for reliable AutoStore operation?

The CY14B104NA-BA45XI requires a 0.1 µF ceramic capacitor between VCAP and VSS, rated for ≥10 V, placed within 5 mm of the package. This value ensures sufficient charge to complete one full STORE cycle when VCC drops below 2.7 V. Larger capacitors extend STORE margin but do not improve speed or reliability beyond specification.

Can CY14B104NA-BA45XI operate in ×8 mode?

No. CY14B104NA is exclusively 256K × 16 (×16) organization. The CY14B104LA variant supports 512K × 8. Pinout, address mapping (A0–A17), and data bus width (DQ0–DQ15) are fixed for ×16 operation; no mode-select pins or internal configuration exist to change bus width.

Is the HSB pin present in all CY14B104NA packages?

No. HSB is omitted in the 44-pin TSOP II ×16 package. It is available only in the 48-ball FBGA and 54-pin TSOP II packages. Systems requiring hardware STORE initiation must select FBGA or 54-pin variants and route HSB to a monitored GPIO or interrupt line.

How does the write-latch mechanism prevent unintended AutoStore cycles?

The nvSRAM internally sets a write-latch flag upon any successful SRAM write. AutoStore and hardware STORE are suppressed unless this flag is set, ensuring data is only saved after meaningful updates. The latch clears automatically after each STORE or RECALL, requiring new writes to re-enable persistence triggers.