Infineon Technologies CY14B104NA-BA45XIT

Overview

CY14B104NA-BA45XIT from Cypress Semiconductor is a 4-Mbit non-volatile SRAM (nvSRAM) organized as 256K × 16, featuring QuantumTrap non-volatile storage, 45 ns access time, single 3 V (+20%, –10%) supply operation, and industrial temperature range (–40°C to +85°C). It performs automatic STORE on power-down using an external VCAP capacitor and supports software/hardware-initiated STORE/RECALL for data retention in mission-critical systems such as industrial PLCs and telecom line cards.

For engineers reviewing the CY14B104NA-BA45XIT datasheet, CY14B104NA-BA45XIT pinout, CY14B104NA-BA45XIT application, or CY14B104NA-BA45XIT equivalent, key selection criteria include ×16 bus width support, HSB-controlled hardware STORE timing, VCAP-based AutoStore reliability, and compatibility with legacy SRAM interfaces requiring infinite write endurance and 20-year data retention.

Technical Context

This nvSRAM integrates parallel SRAM and QuantumTrap non-volatile cells per bit, enabling simultaneous STORE/RECALL across all 256K words without sequential addressing. The architecture inhibits SRAM access during STORE/RECALL cycles and uses internal voltage regulation to drive VCAP during power loss.

STORE is triggered by power-down (via VCAP discharge), HSB pin assertion, or software address sequence; RECALL occurs automatically at power-up or via software command. Byte enable pins BHE/BLE allow selective 8-bit writes within the 16-bit data bus, and HSB serves dual role as input request and open-drain busy indicator with 100 kΩ internal pull-up.

Key Specifications

Pinout & Package

Package: 48-ball fine-pitch ball grid array (FBGA), RoHS-compliant, 7 mm × 9 mm footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nvSRAM applications.

Compared with AS4C4M16SA-6TCN and FM24V04-G, CY14B104NA-BA45XIT uniquely delivers hands-off power-fail STORE without host intervention or refresh management, making it optimal for unattended industrial and safety-critical systems where firmware cannot guarantee timely save actions.

Availability

CY14B104NA-BA45XIT is available at Aetrix Electronics and suitable for industrial PLCs, telecom line cards, medical diagnostic equipment, and avionics flight recorders requiring stable component supply, long-term lifecycle support, and guaranteed RoHS compliance.

Supply support for CY14B104NA-BA45XIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets.

CY14B104NA belongs to the QuantumTrap nvSRAM product line, engineered specifically for systems needing SRAM-speed access with EEPROM-like non-volatility and zero-battery, zero-refresh fail-safe data preservation.

FAQ

What is the minimum VCAP capacitance required for reliable AutoStore operation?

The datasheet specifies a 0.1 µF ceramic capacitor on the VCAP pin. This value ensures sufficient charge to complete one full STORE cycle when VCC drops below VSWITCH (typically 2.7 V). Using a smaller capacitor risks incomplete STORE and data corruption; larger values do not improve reliability but may slow VCAP recharge time between power events.

Can CY14B104NA-BA45XIT be used in a ×8 bus configuration?

No - CY14B104NA is exclusively a 256K × 16 device. The "NA" suffix denotes the ×16 organization; the ×8 variant is CY14B104LA. Pinout, address width (A0–A17), and data bus (DQ0–DQ15) are fixed for ×16 operation. Attempting ×8 use would result in incorrect addressing and data misalignment.

Is the HSB pin mandatory for functional operation?

No - HSB is optional. AutoStore on power-down works without HSB. However, disabling HSB removes hardware-triggered STORE capability and eliminates the busy-status feedback signal. Systems requiring deterministic, externally initiated STORE must connect and monitor HSB per the timing specifications in the datasheet.

How does the nvSRAM handle concurrent SRAM access during STORE/RECALL?

SRAM read and write operations are fully inhibited during STORE or RECALL. The device asserts HSB LOW and disables I/O buffers. Any ongoing write is completed before STORE begins (tDELAY), but new accesses are blocked until HSB returns HIGH and tLZHSB delay expires. This ensures atomic, corruption-free non-volatile state transfer.