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Infineon Technologies CY14B104NA-ZS20XIT
- Part No.:
- CY14B104NA-ZS20XIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY14B104NA-ZS20XIT.pdf
- Description:
- IC NVSRAM 4MBIT PAR 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:2,161
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Product details
Overview
CY14B104NA-ZS20XIT from Cypress Semiconductor is a 4-Mbit non-volatile SRAM (nvSRAM) organized as 256K × 16, featuring QuantumTrap non-volatile storage, 20 ns access time, single 3 V (+20%, –10%) supply operation, and industrial temperature range (–40°C to +85°C). It performs automatic STORE on power-down using an external VCAP capacitor and supports software- or hardware-initiated STORE/RECALL for data retention in mission-critical embedded systems requiring zero-battery backup.
For engineers reviewing the CY14B104NA-ZS20XIT datasheet, CY14B104NA-ZS20XIT pinout, CY14B104NA-ZS20XIT application, or CY14B104NA-ZS20XIT equivalent, key selection considerations include ×16 bus width support, HSB-controlled hardware STORE timing, VCAP capacitor sizing (0.1 µF), BHE/BLE byte enable functionality, and compatibility with legacy SRAM interfaces without redesign.
Technical Context
The CY14B104NA-ZS20XIT integrates standard SRAM array (256K × 16) with parallel QuantumTrap non-volatile cells per bit, enabling simultaneous STORE/RECALL across all locations. Its architecture decouples volatile read/write cycles (infinite endurance) from non-volatile STORE operations (1 million cycles), with automatic power-loss detection via VCC voltage monitoring at VSWITCH threshold.
STORE is triggered by three independent mechanisms: AutoStore (VCC drop below VSWITCH), Hardware STORE (HSB pin assertion), or Software STORE (address sequence). RECALL occurs automatically on power-up or via software command. During STORE/RECALL, SRAM access is inhibited, and HSB provides open-drain busy signaling with tHHHD high-pulse and tLZHSB post-completion latency.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4 Mbit (256K × 16 organization), directly replacing standard 256K-word SRAMs without address/data bus changes. |
| Access Time | 20 ns - enables direct interface with high-speed microcontrollers (e.g., ARM Cortex-M7, SHARC DSPs) without wait states. |
| Supply Voltage | 3.0 V ±10% (–10% to +20%), compatible with industrial 3.3 V rails and tolerant of brown-out conditions during STORE initiation. |
| Data Retention | 20 years at +85°C - ensures long-term data integrity in unpowered storage for medical, aerospace, and energy metering applications. |
| STORE Endurance | 1 million STORE cycles - sufficient for daily firmware logging or configuration save in industrial PLCs over 27+ years. |
| Operating Temperature | –40°C to +85°C - qualified for under-hood automotive ECUs, factory automation controllers, and outdoor telecom equipment. |
| VCAP Requirement | 0.1 µF ceramic capacitor on VCAP pin - provides ~20 ms hold-up time to complete STORE during power failure; no battery or supercapacitor needed. |
Pinout & Package
Package: 48-ball fine-pitch ball grid array (FBGA), RoHS-compliant, 6 mm × 8 mm footprint, 0.5 mm pitch, suitable for high-density PCB layouts and automated SMT assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Input | 18-bit address bus for 256K-word addressing; A17 is MSB, supports full memory map without external decoding. |
| DQ0–DQ15 | Bidirectional Data I/O | 16-bit parallel data path; DQ0–DQ7 = low byte, DQ8–DQ15 = high byte, controlled by BLE/BHE pins. |
| WE, CE, OE | Control Inputs | Standard SRAM control triad: WE (write enable, active LOW), CE (chip enable, active LOW), OE (output enable, active LOW). |
| BHE, BLE | Byte Enable Inputs | Active LOW signals enabling high-byte (DQ8–DQ15) or low-byte (DQ0–DQ7); essential for partial-word writes in 16-bit mode. |
| HSB | Hardware STORE Busy | Open-drain status pin: driven LOW during STORE/RECALL; pulled LOW externally to initiate hardware STORE; requires external pull-up if used. |
| VCAP | AutoStore Capacitor Supply | Internal regulator output; connects to 0.1 µF ceramic capacitor to sustain STORE operation during VCC collapse. |
| VCC, VSS | Power & Ground | Single 3 V supply domain; VSS must be low-impedance ground plane connection to ensure STORE reliability and noise immunity. |
Key Features
| Feature | Design Value |
|---|---|
| QuantumTrap Non-Volatile Storage | Embedded per-cell non-volatile element enables true nvSRAM behavior-no external EEPROM or flash required for state retention. |
| AutoStore on Power Loss | Automatic STORE triggered when VCC falls below VSWITCH; eliminates need for external power-fail detection circuitry or supervisor ICs. |
| Three-Mode STORE Control | Supports software (address sequence), hardware (HSB pin), and AutoStore-gives system designers flexibility for deterministic vs. fail-safe data capture. |
| Hardware STORE Busy Signaling | HSB pin provides real-time status of STORE/RECALL progress, enabling MPU synchronization and preventing premature memory access. |
| Industrial Temperature Operation | Validated performance from –40°C to +85°C ensures reliable operation in harsh environments without derating or thermal management overhead. |
Applications
| Industrial PLC Data Logging | Medical Device Configuration Storage |
|---|---|
|
Use Scenario: Storing runtime parameters, calibration coefficients, and alarm history in programmable logic controllers deployed in factory-floor environments with frequent power cycling. IC Role / Device Role / Timing Role: Non-volatile SRAM providing immediate-access RAM functionality during operation and guaranteed data persistence across unexpected outages. Use Value: Eliminates need for battery-backed SRAM or external serial EEPROM, reducing BOM count, board space, and long-term maintenance risk from battery leakage or end-of-life replacement. |
Use Scenario: Retaining user-defined settings, sensor calibration data, and last-known vital sign thresholds in portable ultrasound or infusion pumps subject to regulatory audit and field updates. IC Role / Device Role / Timing Role: High-reliability memory holding critical configuration data that must survive power loss without corruption or delay during power-up RECALL. Use Value: 20-year data retention and 1M STORE cycles meet IEC 62304 Class C software requirements for safety-critical medical devices with zero tolerance for data loss. |
| Telecom Base Station Control Memory | Automotive ADAS ECU State Backup |
|
Use Scenario: Preserving radio channel assignments, neighbor cell lists, and encryption keys in LTE/5G small cell base stations operating in remote or grid-unstable locations. IC Role / Device Role / Timing Role: Fast-access memory with deterministic STORE latency (<10 ms) ensuring configuration integrity during grid flicker or generator switchover. Use Value: 20 ns access time allows direct MPU interfacing without glue logic; VCAP-based STORE removes dependency on backup batteries prone to temperature-induced failure. |
Use Scenario: Capturing pre-crash sensor fusion data, camera frame buffers, and steering angle history in autonomous driving ECUs where milliseconds matter for incident reconstruction. IC Role / Device Role / Timing Role: Low-latency nvSRAM acting as crash-data black box memory, activated by HSB signal from vehicle power management unit during rapid voltage decay. Use Value: Hardware STORE initiation via HSB ensures sub-millisecond response to power anomaly, capturing up to 256K words of time-stamped sensor data before shutdown. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STK14C88-3A35I | 4-Mbit (256K × 16), 35 ns access, 5 V operation, no HSB pin, uses lithium battery backup instead of VCAP. | Lacks AutoStore and hardware STORE control; requires battery replacement planning and failsafe battery voltage monitoring circuitry. | Select only if legacy 5 V systems exist and battery maintenance is acceptable; not suitable for RoHS-only or battery-free designs. |
| FM24V10-G | 4-Mbit (256K × 16), 45 ns access, 2.7–3.6 V, uses ferroelectric RAM (FRAM); no STORE/RECALL latency, but lower write endurance (10¹⁴ cycles) and higher standby current. | No STORE/RECALL inhibition period; supports concurrent reads during writes, but lacks hardware STORE trigger and VCAP simplicity. | Prefer for high-write-frequency logging where STORE latency is unacceptable; avoid where deterministic power-loss capture via HSB is required. |
Compared with STK14C88-3A35I and FM24V10-G, CY14B104NA-ZS20XIT uniquely combines 20 ns speed, VCAP-based zero-battery STORE, HSB-driven hardware control, and 20-year retention-making it optimal for industrial and automotive systems demanding both performance and fail-safe determinism.
Availability
CY14B104NA-ZS20XIT is available at Aetrix Electronics and suitable for industrial PLCs, medical diagnostic equipment, and telecom infrastructure requiring stable component supply, long-lifecycle assurance, and RoHS-compliant packaging.
Supply support for CY14B104NA-ZS20XIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, PSoC programmable systems-on-chip, and USB/USB-C solutions for industrial, automotive, and consumer markets.
The CY14B nvSRAM product line was designed specifically to replace battery-backed SRAM in mission-critical systems-delivering deterministic non-volatility, industrial temperature resilience, and seamless SRAM interface compatibility.
FAQ
What is the minimum VCAP capacitor value required for reliable AutoStore operation?
The CY14B104NA-ZS20XIT requires a 0.1 µF X7R ceramic capacitor on the VCAP pin to guarantee successful STORE during VCC collapse. This value is validated for 20 ms hold-up time at worst-case industrial temperature and load; smaller capacitors may cause incomplete STORE and data corruption.
Does the HSB pin function in all package variants of CY14B104NA?
No. The HSB pin is present in the 48-ball FBGA and 54-pin TSOP II packages but omitted in the 44-pin TSOP II (×16) variant. Designers selecting the 44-pin version must rely solely on software STORE or AutoStore, losing hardware-triggered deterministic control.
Can CY14B104NA-ZS20XIT be used as a drop-in replacement for standard 256K × 16 SRAMs?
Yes-its pinout, timing, and control signals (CE, WE, OE, BHE, BLE) match industry-standard 256K × 16 SRAMs. No PCB or firmware changes are needed beyond connecting VCAP and optionally routing HSB; RECALL on power-up is transparent to the host MPU.
How does the CY14B104NA-ZS20XIT handle multiple STORE requests during power loss?
It executes only one STORE per power-loss event. After AutoStore initiates, subsequent voltage drops or HSB assertions are ignored until RECALL completes on next power-up. This prevents redundant or conflicting STORE attempts that could compromise data integrity.
CY14B104NA-ZS20XIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 20ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY14B104NA-ZS20XIT FAQ
1.How can I place an order for CY14B104NA-ZS20XIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY14B104NA-ZS20XIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY14B104NA-ZS20XIT reliable?
The price and inventory of CY14B104NA-ZS20XIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY14B104NA-ZS20XIT is usually 5 days.
3.What payment methods are accepted for CY14B104NA-ZS20XIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY14B104NA-ZS20XIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY14B104NA-ZS20XIT?
CY14B104NA-ZS20XIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY14B104NA-ZS20XIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY14B104NA-ZS20XIT?
For technical support, including CY14B104NA-ZS20XIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY14B104NA-ZS20XIT requirements.
6.How does Aetrix verify that CY14B104NA-ZS20XIT is sourced from the original manufacturer or authorized distributors?
All CY14B104NA-ZS20XIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY14B104NA-ZS20XIT meets industry standards.
7.What is the process for return or replacement of CY14B104NA-ZS20XIT?
All CY14B104NA-ZS20XIT units undergo pre-shipment inspection (PSI). If there is an issue with CY14B104NA-ZS20XIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY14B104NA-ZS20XIT part is unused and in its original packaging.
Return procedure for CY14B104NA-ZS20XIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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