Infineon Technologies CY14B104NA-ZS25XET

Overview

CY14B104NA-ZS25XET from Cypress Semiconductor is an automotive-grade 4-Mbit (256K × 16) non-volatile SRAM with QuantumTrap technology, operating at 25 ns access time and supporting –40 °C to +85 °C (Automotive-A grade). It integrates fast SRAM with embedded non-volatile storage, enabling automatic STORE on power-down via VCAP capacitor and software- or hardware-triggered STORE/RECALL. Used in engine control units for real-time parameter retention during ignition cycling.

For engineers reviewing the CY14B104NA-ZS25XET datasheet, CY14B104NA-ZS25XET pinout, CY14B104NA-ZS25XET application, or CY14B104NA-ZS25XET equivalent, key selection criteria include AutoStore timing (tSTORE = 10 ms max), VCAP capacitance requirement (0.1 µF), HSB pin behavior during STORE busy, and compatibility with 16-bit parallel bus interfaces in safety-critical automotive systems.

Technical Context

The device implements a dual-cell architecture: standard SRAM for volatile read/write and QuantumTrap non-volatile elements per cell. STORE transfers data from SRAM to non-volatile cells; RECALL restores it on power-up - both operations inhibit concurrent SRAM access. The HSB pin serves as both initiation input and open-drain status output with internal 100 kΩ pull-up.

AutoStore activates when VCC drops below VSWITCH (2.7 V min), using charge stored on VCAP to complete one STORE cycle. Software STORE/RECALL use deterministic 6-address read sequences (e.g., 0x4E38 → 0xB1C7 → … → 0x8FC0), requiring strict timing and no intervening accesses. Byte enables BHE/ BLE support 8-bit sub-word writes in 16-bit configuration.

Key Specifications

Pinout & Package

Package: 48-ball fine-pitch ball grid array (FBGA), 6 × 8 mm, 0.8 mm pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nvSRAM applications.

Compared with FM24V10-G and MB85RS4MT-Y, CY14B104NA-ZS25XET delivers deterministic 25 ns parallel access, automotive-grade temperature compliance, and hardware-managed STORE/RECALL - making it uniquely suited for legacy and next-gen automotive MCU platforms requiring drop-in SRAM compatibility with non-volatility.

Availability

CY14B104NA-ZS25XET is available at Aetrix Electronics and suitable for engine control units, ADAS domain controllers, and telematics control units requiring stable component supply across extended automotive product lifecycles.

Supply support for CY14B104NA-ZS25XET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for automotive, industrial, and IoT applications.

CY14B104NA belongs to the Automotive nvSRAM product line, engineered specifically to replace battery-backed SRAM in safety-critical systems where data persistence must survive power interruption without external components.

FAQ

What is the minimum VCAP capacitance required for reliable AutoStore operation?

The CY14B104NA-ZS25XET requires a 0.1 µF X7R ceramic capacitor on the VCAP pin, placed within 3 mm of the package. This value ensures sufficient charge to complete one STORE operation (tSTORE ≤ 10 ms) when VCC drops below 2.7 V. Larger values do not improve reliability but may slow power-up RECALL timing due to increased VCAP charge time.

Can the HSB pin be left unconnected if hardware STORE is not used?

Yes - the HSB pin may be left floating if hardware STORE initiation and busy indication are unused. The internal 100 kΩ weak pull-up will hold it HIGH during normal operation. However, if the system monitors HSB for STORE completion, a 10 kΩ external pull-up to VCC is recommended to ensure robust noise immunity in automotive harness environments.

How does the CY14B104NA-ZS25XET prevent unintended STORE during power-up?

The device inhibits AutoStore unless at least one SRAM write has occurred since the last STORE or RECALL cycle. During power-up RECALL, the write latch remains unset until the first valid write, preventing spurious STORE activation. This behavior is hardwired and requires no firmware configuration.

Is the CY14B104NA-ZS25XET compatible with 3.3 V systems?

No - the CY14B104NA-ZS25XET is specified only for 3.0 V ±10% (2.7–3.3 V) operation. It is not rated for 3.3 V ±0.3 V like the CY14B104NE variant. Using it in a nominal 3.3 V system risks exceeding VCC absolute maximum ratings and invalidating AEC-Q100 qualification.