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Infineon Technologies CY14B104NA-ZS25XI

Part No.:
CY14B104NA-ZS25XI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
44-TSOP (0.400", 10.16mm Width)
Datasheet:
AetrixCY14B104NA-ZS25XI.pdf
Description:
IC NVSRAM 4MBIT PAR 44TSOP II
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:310

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Product details

Overview

CY14B104NA-ZS25XI from Cypress Semiconductor is a 4-Mbit non-volatile SRAM (nvSRAM) organized as 256K × 16, operating at 3 V ±10%, with 25 ns access time, AutoStore on power-down, and QuantumTrap non-volatile storage. It serves as drop-in SRAM replacement in industrial control systems requiring persistent data retention without external backup power or batteries.

For engineers reviewing the CY14B104NA-ZS25XI datasheet, CY14B104NA-ZS25XI pinout, CY14B104NA-ZS25XI application, or CY14B104NA-ZS25XI equivalent, key selection criteria include ×16 bus interface support, HSB-controlled hardware STORE capability, VCAP-based autonomous power-loss protection, and 1 million STORE endurance with 20-year data retention.

Technical Context

This nvSRAM integrates standard SRAM array logic with parallel QuantumTrap non-volatile cells per bit, enabling simultaneous STORE/RECALL across all 256K words. The architecture supports three STORE triggers: AutoStore (VCC dropout), hardware STORE (HSB assertion), and software STORE (address sequence).

It operates exclusively in ×16 mode for this variant, using A0–A17 address lines and DQ0–DQ15 bidirectional data lines, with BHE/ BLE byte enables. HSB functions both as input (STORE request) and open-drain output (busy indicator), while VCAP supplies regulated energy for reliable STORE execution during brownout.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 4 Mbit (256K × 16 organization)
Access Time 25 ns - guarantees read data valid within 25 ns after address/control setup
Supply Voltage 3.0 V ±10% - single-rail operation compatible with 3.3 V system rails with margin
STORE Endurance 1 million cycles - defines maximum number of non-volatile write operations before wear-out
Data Retention 20 years at +85°C - guaranteed non-volatile data hold without refresh or power
Operating Temperature –40°C to +85°C - qualified for industrial ambient environments
AutoStore Trigger VCC < VSWITCH - automatic initiation when main supply drops below switch threshold

Pinout & Package

Package: 48-ball fine-pitch ball grid array (FBGA), RoHS-compliant, 6 mm × 8 mm footprint.

Pin/Terminal Circuit Role Design Meaning
A0–A17 Input 18-bit address bus for 256K-word addressing; no A18 required in ×16 mode
DQ0–DQ15 I/O 16-bit bidirectional data bus; full-width interface eliminates byte-lane multiplexing
WE, CE, OE Input Standard SRAM control trio: write enable (active low), chip enable (active low), output enable (active low)
BHE, BLE Input Byte enable controls for upper/lower 8 bits of DQ bus; required for partial-word writes
HSB I/O Hardware STORE Busy: input to initiate STORE, open-drain output indicating active STORE cycle
VCAP Power Capacitor connection point; internal regulator charges external 0.1 µF capacitor for STORE energy reserve
VCC, VSS Power Single 3 V supply and ground; decoupling required per high-speed SRAM layout practice

Key Features

Feature Design Value
QuantumTrap Non-Volatile Cell Embedded per-bit NV element enabling infinite SRAM reads/writes alongside 1M STORE cycles
AutoStore on Power Loss Self-triggered STORE using VCAP-supplied energy when VCC falls below VSWITCH, no host intervention needed
Hardware STORE Control HSB pin allows deterministic, externally timed STORE initiation with busy feedback for synchronization
Software STORE/RECALL Address-sequence commands enable STORE/RECALL without pin toggling-ideal for firmware-controlled persistence
Industrial Temp Range –40°C to +85°C operation validated across voltage and timing margins per JEDEC JESD22-A108

Applications

Industrial PLC Data Logging Medical Device Configuration Storage

Use Scenario: Storing real-time I/O state and alarm history in programmable logic controllers during mains failure.

IC Role / Device Role / Timing Role: Non-volatile SRAM buffer retaining last-known operational state without battery or supercapacitor backup.

Use Value: Eliminates need for external backup power circuitry while guaranteeing 20-year data retention at end-of-life.

Use Scenario: Preserving calibration coefficients and user preferences in portable diagnostic equipment between power cycles.

IC Role / Device Role / Timing Role: Persistent memory mapped directly to microcontroller's 16-bit data bus for zero-latency recall on power-up.

Use Value: Enables immediate device readiness post-power-on with no initialization delay or EEPROM emulation overhead.

Telecom Base Station Control Memory Avionics Black Box Recorder Buffer

Use Scenario: Caching critical configuration parameters and fault logs in LTE/5G remote radio units exposed to wide thermal swings.

IC Role / Device Role / Timing Role: Industrial-grade nvSRAM interfacing with FPGA or ARM-based baseband processor via ×16 bus.

Use Value: Provides deterministic STORE latency (<10 ms) and immunity to voltage droop during RF burst transmission.

Use Scenario: Capturing flight sensor snapshots in crash-protected recorders where power interruption is abrupt and unannounced.

IC Role / Device Role / Timing Role: High-reliability memory with AutoStore triggered by VCC collapse, independent of host CPU response time.

Use Value: Ensures final pre-failure data is preserved even if system reset occurs mid-capture due to impact-induced brownout.

Equivalent & Alternatives

The following parts are listed as comparable options for similar non-volatile SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
STK14C88-3AJ 3 V, 256K × 16 nvSRAM; uses SONOS non-volatile technology; 70 ns access; no HSB pin Lacks hardware STORE trigger and busy signaling; relies solely on software STORE or power-loss detection Select when HSB synchronization is unnecessary and slower access time is acceptable
FM24V10-G 4-Mbit F-RAM (256K × 16); 3 V; 55 ns access; unlimited endurance; no STORE latency or VCAP capacitor No STORE/RECALL latency or energy dependency; inherently non-volatile but lower speed than nvSRAM Select when infinite write endurance outweighs 25 ns SRAM performance and deterministic STORE timing

Compared with STK14C88-3AJ and FM24V10-G, CY14B104NA-ZS25XI uniquely delivers 25 ns SRAM speed with hardware-synchronized STORE via HSB and VCAP-backed power-loss resilience-critical for time-sensitive industrial logging where latency and reliability must coexist.

Availability

CY14B104NA-ZS25XI is available at Aetrix Electronics and suitable for industrial PLCs, medical diagnostics equipment, telecom infrastructure, and avionics black box recorders requiring stable component supply and long-term lifecycle assurance.

Supply support for CY14B104NA-ZS25XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets.

CY14B104NA belongs to the QuantumTrap nvSRAM product line, engineered specifically to replace battery-backed SRAM in mission-critical systems where maintenance-free, long-term data retention is mandatory.

FAQ

What is the function of the VCAP pin?

The VCAP pin connects to an external 0.1 µF capacitor that stores charge during normal operation. When VCC drops below VSWITCH, the internal regulator isolates VCAP and supplies energy to complete a full STORE operation-ensuring data integrity during uncontrolled power loss without host intervention.

Does CY14B104NA-ZS25XI support ×8 operation?

No. CY14B104NA is strictly a 256K × 16 device using A0–A17 and DQ0–DQ15. The ×8 variant is CY14B104LA (512K × 8). Pinout, address depth, and data bus width are fixed per part number; mixing configurations is not supported.

How does the HSB pin behave during STORE?

HSB is driven LOW by the device during any STORE (AutoStore, hardware, or software) to signal busy status. After completion, it is actively driven HIGH for tHHHD (≤100 ns), then held HIGH by an internal 100 kΩ pull-up. External pull-up is optional but recommended for noise immunity.

Can AutoStore be disabled?

Yes-via a specific software sequence documented in the datasheet (page 8, "Preventing AutoStore"). Disabling is required if no VCAP capacitor is installed, as attempted AutoStore without sufficient charge corrupts stored data. Once disabled, STORE requires explicit hardware or software initiation.

CY14B104NA-ZS25XI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
44-TSOP (0.400", 10.16mm Width)
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
NVSRAM
Technology:
NVSRAM (Non-Volatile SRAM)
Memory Size:
4Mbit
Memory Organization:
256K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
25ns
Access Time:
25 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
44-TSOP II

CY14B104NA-ZS25XI FAQ

1.How can I place an order for CY14B104NA-ZS25XI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY14B104NA-ZS25XI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY14B104NA-ZS25XI reliable?

The price and inventory of CY14B104NA-ZS25XI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY14B104NA-ZS25XI is usually 5 days.

3.What payment methods are accepted for CY14B104NA-ZS25XI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY14B104NA-ZS25XI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY14B104NA-ZS25XI?

CY14B104NA-ZS25XI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY14B104NA-ZS25XI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY14B104NA-ZS25XI?

For technical support, including CY14B104NA-ZS25XI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY14B104NA-ZS25XI requirements.

6.How does Aetrix verify that CY14B104NA-ZS25XI is sourced from the original manufacturer or authorized distributors?

All CY14B104NA-ZS25XI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY14B104NA-ZS25XI meets industry standards.

7.What is the process for return or replacement of CY14B104NA-ZS25XI?

All CY14B104NA-ZS25XI units undergo pre-shipment inspection (PSI). If there is an issue with CY14B104NA-ZS25XI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY14B104NA-ZS25XI part is unused and in its original packaging.

Return procedure for CY14B104NA-ZS25XI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY14B104NA-ZS25XI Tags

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