Infineon Technologies CY14B104NA-ZS45XE
- Part No.:
- CY14B104NA-ZS45XE
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY14B104NA-ZS45XE.pdf
- Description:
- IC NVSRAM 4MBIT PAR 44TSOP II
- Quantity:
- Payment:

- Shipping:

Inventory:2,553
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY14B104NA-ZS45XE from Cypress Semiconductor is an automotive-grade 4-Mbit (256K × 16) non-volatile SRAM with QuantumTrap technology, operating at 45 ns access time, single 3.3 V supply (+0.3 V), and –40 °C to +125 °C extended temperature range. It integrates fast SRAM with embedded nonvolatile storage, enabling automatic STORE on power-down via VCAP capacitor and software- or hardware-triggered RECALL for mission-critical data retention in engine control units and ADAS modules.
For engineers reviewing the CY14B104NA-ZS45XE datasheet, CY14B104NA-ZS45XE pinout, CY14B104NA-ZS45XE application, or CY14B104NA-ZS45XE equivalent, key selection criteria include AutoStore timing under voltage droop, HSB-driven hardware STORE arbitration, byte-enable granularity (BHE/ BLE), VCAP capacitance requirements (0.1 µF), and Automotive-E endurance rating (100K STORE cycles).
Technical Context
The device implements a dual-cell architecture: standard SRAM for high-speed read/write and parallel QuantumTrap nonvolatile elements per cell. STORE and RECALL execute in full-word parallel mode, eliminating sequential bit-line programming delays. All operations-AutoStore, hardware STORE, and software STORE-are conditional on prior SRAM write activity to prevent spurious nonvolatile writes.
Hardware STORE uses open-drain HSB pin with internal 100 kΩ pull-up and tDELAY timing window to synchronize with ongoing SRAM writes. Power-up RECALL initiates automatically when VCC exceeds VSWITCH, with HSB driven LOW for duration tHRECALL (max 20 ms), during which all memory access is inhibited.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4 Mbit (256K × 16 words); supports 16-bit wide data bus without external multiplexing. |
| Access Time | 45 ns; defines maximum clock-to-data valid delay for CE/OE-controlled reads in automotive E-temp operation. |
| Supply Voltage | 3.3 V +0.3 V; strict upper limit prevents overvoltage stress on QuantumTrap cells during transient conditions. |
| Operating Temperature | –40 °C to +125 °C (Automotive-E grade); validated for under-hood ECUs and radar processing units. |
| STORE Endurance | 100K cycles; guaranteed minimum nonvolatile write cycles before QuantumTrap wear-out in extended temp range. |
| Data Retention | 1 year at +125 °C; specifies minimum time nonvolatile data remains intact after final STORE without power. |
| VCAP Capacitance | 0.1 µF ceramic; minimum value required to sustain full STORE operation during VCC dropout ≥100 µs. |
Pinout & Package
Package: 44-pin TSOP II (Type II), 12.0 mm × 20.0 mm body, 0.8 mm pitch, RoHS-compliant, lead-free finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Input | 18-bit address bus supporting full 256K-word addressing; A16/A17 are NC in 4-Mbit configuration but reserved for future density scaling. |
| DQ0–DQ15 | Bidirectional Data I/O | 16-bit parallel data path; tristated when OE HIGH or during STORE/RECALL to prevent bus contention. |
| WE, CE, OE | Control Inputs (Active LOW) | Standard SRAM control triad; WE enables write latching, CE selects chip, OE gates output drivers-compatible with legacy MPU timing. |
| BHE, BLE | Byte Enable Inputs | Independent 8-bit byte masking: BHE controls DQ15–DQ8, BLE controls DQ7–DQ0-enables partial-word writes without read-modify-write. |
| HSB | Hardware STORE Busy | Open-drain status signal: driven LOW during STORE/RECALL; pulled LOW externally to initiate hardware STORE; requires external pull-up if used as input. |
| VCAP | AutoStore Capacitor Terminal | Internal regulator output node; must connect 0.1 µF ceramic capacitor to ground to enable power-loss STORE-no internal charge pump. |
Key Features
| Feature | Design Value |
|---|---|
| AutoStore on Power-Down | Zero-software overhead STORE triggered by VCC drop below VSWITCH; relies solely on external VCAP capacitor-no firmware intervention needed. |
| Conditional STORE Arbitration | Hardware and AutoStore operations only execute if at least one SRAM write occurred since last STORE/RECALL-eliminates redundant nonvolatile writes. |
| Software-Controlled STORE/RECALL | 6-address sequence (e.g., 0x4E38 → 0xB1C7 → … → 0x8FC0) executed via standard CE/OE reads-enables deterministic STORE timing in safety-critical boot sequences. |
| HSB Pin Dual Functionality | Serves as both STORE request input (external LOW) and busy indicator (internal LOW during operation)-enables real-time system-level STORE progress monitoring. |
| Automotive-E Qualification | Validated for 100K STORE cycles and 1-year data retention at +125 °C-meets AEC-Q100 Grade 2 requirements for engine bay applications. |
Applications
| Engine Control Unit (ECU) | Advanced Driver Assistance Systems (ADAS) |
|---|---|
|
Use Scenario: Storing real-time sensor fusion logs and fault codes during unexpected ignition loss in gasoline direct injection systems. IC Role / Device Role / Timing Role: Nonvolatile scratchpad memory retaining critical runtime state across cold starts and brownouts. Use Value: Eliminates need for external EEPROM write sequencing and backup battery, reducing BOM count and failure modes in harsh thermal environments. |
Use Scenario: Preserving radar object tracking history and calibration offsets during vehicle power cycling in parking assist modules. IC Role / Device Role / Timing Role: High-reliability data vault synchronized to MCU reset vector-ensures zero-latency RECALL on wake-up. Use Value: Enables sub-20 ms system readiness after power restoration, meeting ISO 26262 ASIL-B diagnostic response time requirements. |
| Electric Power Steering (EPS) | Telematics Control Unit (TCU) |
|
Use Scenario: Capturing torque sensor drift compensation values and motor phase current waveforms during sudden 12 V rail collapse. IC Role / Device Role / Timing Role: Fail-safe memory buffer with <100 µs STORE initiation latency upon VCC droop detection. Use Value: Guarantees preservation of last-known safe steering position and motor winding integrity data for post-failure diagnostics. |
Use Scenario: Maintaining cellular modem connection state, GNSS almanac, and OTA update staging metadata during vehicle sleep/wake transitions. IC Role / Device Role / Timing Role: Persistent configuration store accessible via standard SRAM interface-no driver porting required. Use Value: Reduces TCU wake-up time by 40% versus SPI flash-based solutions, lowering average power consumption in always-on connectivity mode. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FM24V10-G | 4-Mbit F-RAM; 3.3 V, –40 °C to +85 °C; unlimited STORE cycles; no VCAP capacitor required. | Limited to commercial/industrial temp; lacks Automotive-E qualification and 125 °C retention guarantee. | Select for cost-sensitive infotainment systems where extended temperature is not required and infinite endurance is prioritized. |
| MB85RS4MT | 4-Mbit FRAM; 1.8–3.6 V; –40 °C to +105 °C; 10¹⁴ read/write cycles; SPI interface only. | Serial interface increases MCU GPIO and timing overhead; no parallel bus support or AutoStore capability. | Choose when board space constraints prohibit TSOP II footprint and system architecture already uses SPI peripherals. |
Compared with FM24V10-G and MB85RS4MT, CY14B104NA-ZS45XE uniquely delivers parallel-interface nvSRAM with guaranteed 100K STORE cycles and 1-year data retention at +125 °C-making it the only qualified solution for powertrain and chassis control units requiring deterministic STORE timing and AEC-Q100 compliance.
Availability
CY14B104NA-ZS45XE is available at Aetrix Electronics and suitable for engine control units, ADAS domain controllers, and electric power steering systems requiring stable component supply across automotive production lifecycles.
Supply support for CY14B104NA-ZS45XE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability semiconductor solutions for automotive, industrial, and IoT applications, with deep expertise in nonvolatile memory architectures.
CY14B104NA belongs to the Automotive nvSRAM product line, engineered specifically for fail-safe data retention in safety-critical electronic control units where power interruption is common and firmware intervention cannot be assumed.
FAQ
What is the minimum VCAP capacitance required for reliable AutoStore operation?
The CY14B104NA-ZS45XE requires a minimum 0.1 µF X7R ceramic capacitor between VCAP and VSS to ensure successful STORE completion during VCC dropout events lasting up to 100 µs. Lower values risk incomplete STORE and data corruption; larger values do not improve reliability but may increase board area and cost.
Can the HSB pin be left unconnected if hardware STORE is not used?
Yes-the HSB pin may be left floating if hardware STORE initiation and busy monitoring are unused. The internal 100 kΩ weak pull-up ensures HSB remains HIGH during normal operation. No external pull-up is required unless the pin is actively driven LOW by an external controller to trigger STORE.
How does the conditional STORE feature prevent unnecessary nonvolatile writes?
The CY14B104NA-ZS45XE monitors SRAM write activity using an internal latch. AutoStore and hardware STORE are suppressed unless at least one valid write cycle occurs after the most recent STORE or RECALL. This avoids wear on QuantumTrap cells during idle periods or read-only operation-extending effective endurance beyond rated 100K cycles.
Is software STORE compatible with all microcontroller families?
Yes-software STORE uses six consecutive CE- or OE-controlled read accesses to fixed addresses (e.g., 0x4E38, 0xB1C7…), requiring no special instructions or bus protocols. It works with any 16-bit MPU or microcontroller supporting standard asynchronous SRAM timing, including ARM Cortex-M, Renesas RH850, and NXP S32K series.
CY14B104NA-ZS45XE Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 3V ~ 3.63V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY14B104NA-ZS45XE FAQ
1.How can I place an order for CY14B104NA-ZS45XE through Aetrix?
Please submit a Request for Quotation (RFQ) for CY14B104NA-ZS45XE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY14B104NA-ZS45XE reliable?
The price and inventory of CY14B104NA-ZS45XE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY14B104NA-ZS45XE is usually 5 days.
3.What payment methods are accepted for CY14B104NA-ZS45XE?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY14B104NA-ZS45XE transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY14B104NA-ZS45XE?
CY14B104NA-ZS45XE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY14B104NA-ZS45XE order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY14B104NA-ZS45XE?
For technical support, including CY14B104NA-ZS45XE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY14B104NA-ZS45XE requirements.
6.How does Aetrix verify that CY14B104NA-ZS45XE is sourced from the original manufacturer or authorized distributors?
All CY14B104NA-ZS45XE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY14B104NA-ZS45XE meets industry standards.
7.What is the process for return or replacement of CY14B104NA-ZS45XE?
All CY14B104NA-ZS45XE units undergo pre-shipment inspection (PSI). If there is an issue with CY14B104NA-ZS45XE, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY14B104NA-ZS45XE part is unused and in its original packaging.
Return procedure for CY14B104NA-ZS45XE:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY14B104NA-ZS45XE Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

