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Infineon Technologies CY14B104NA-ZS45XI
- Part No.:
- CY14B104NA-ZS45XI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY14B104NA-ZS45XI.pdf
- Description:
- IC NVSRAM 4MBIT PAR 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:654
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Product details
Overview
CY14B104NA-ZS45XI from Cypress Semiconductor is a 4-Mbit non-volatile SRAM (nvSRAM) with 256K × 16 organization, 45 ns access time, single 3 V (+20%, –10%) supply, and QuantumTrap non-volatile storage technology. It performs automatic STORE on power-down using an external VCAP capacitor and supports software- or hardware-triggered STORE/RECALL. Used in industrial control modules where data persistence across uncontrolled power loss is critical.
For engineers reviewing the CY14B104NA-ZS45XI datasheet, CY14B104NA-ZS45XI pinout, CY14B104NA-ZS45XI application, or CY14B104NA-ZS45XI equivalent, key selection criteria include ×16 bus interface compatibility, AutoStore timing constraints (tDELAY, tLZHSB), VCAP capacitance requirement (0.1 µF), and HSB pin behavior during STORE busy state.
Technical Context
The CY14B104NA-ZS45XI integrates standard SRAM array (2048 × 2048) with parallel QuantumTrap non-volatile cells per bit, enabling simultaneous STORE/RECALL across all memory locations. Its architecture decouples volatile read/write (infinite cycles) from non-volatile STORE (1 million cycles) and RECALL (infinite cycles).
STORE is triggered by power-loss detection (VCC < VSWITCH), HSB pin assertion, or software address sequence; RECALL occurs automatically at power-up or via software command. The HSB pin serves dual role: input to initiate STORE and open-drain output indicating active STORE (driven LOW) with internal 100 kΩ pull-up.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4 Mbit (256K × 16 organization) |
| Access Time | 45 ns - defines maximum clock-to-data delay for read cycles under specified VCC and temperature |
| Supply Voltage | 3.0 V ±10% (–10%) / +20% - requires stable 3 V rail with tolerance margin for industrial operation |
| Data Retention | 20 years - guaranteed non-volatile data hold without power or refresh |
| STORE Endurance | 1 million cycles - limits total number of STORE operations before QuantumTrap wear-out |
| Operating Temperature | –40 °C to +85 °C - validated for industrial ambient conditions without derating |
| VCAP Capacitance | 0.1 µF - minimum external capacitor required to sustain full STORE operation during VCC dropout |
Pinout & Package
Package: 48-ball fine-pitch ball grid array (FBGA), RoHS-compliant, industrial-grade thermal profile.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Input | 18-bit address bus for 256K-word addressing in ×16 mode; A17 is MSB |
| DQ0–DQ15 | Bidirectional Data I/O | 16-bit parallel data path; tristated when OE HIGH or during STORE/RECALL |
| WE | Write Enable (Active LOW) | Controls write latch enable; must be stable before and during write cycle |
| CE | Chip Enable (Active LOW) | Selects device for read/write; disables outputs and inhibits internal operations when HIGH |
| OE | Output Enable (Active LOW) | Enables SRAM data drivers; outputs high-impedance when HIGH |
| BHE/ BLE | Byte Enable (Active LOW) | BHE controls DQ15–DQ8; BLE controls DQ7–DQ0; enables partial-word writes in ×16 mode |
| HSB | Hardware STORE Busy | Open-drain status pin: driven LOW during STORE; pulled LOW externally to initiate STORE |
| VCAP | AutoStore Capacitor Supply | Connects to 0.1 µF capacitor; supplies energy for STORE during VCC collapse |
| VCC / VSS | Power / Ground | Single 3 V supply and return; requires local decoupling per layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| AutoStore on Power Loss | Self-initiated STORE using VCAP charge when VCC drops below VSWITCH - eliminates need for external power-fail detection circuitry |
| Software STORE/RECALL | Non-disruptive STORE/RECALL via address-based command sequence - enables deterministic data persistence without hardware signal intervention |
| Hardware STORE Trigger | HSB pin allows external controller to request STORE synchronously with system events (e.g., watchdog timeout, emergency shutdown) |
| Parallel Cell Architecture | All 256K × 16 cells STORE/RECALL simultaneously - ensures atomic, consistent non-volatile update without block-level latency |
| Industrial Temp Support | Validated operation from –40 °C to +85 °C - suitable for factory automation, metering, and transportation control systems |
Applications
| Industrial PLC Data Logging | Smart Meter Firmware State Backup |
|---|---|
|
Use Scenario: Programmable logic controllers record sensor timestamps and operational states in volatile memory during runtime. IC Role / Device Role / Timing Role: nvSRAM acts as persistent shadow RAM; stores last valid state before unexpected power interruption. Use Value: Eliminates battery-backed SRAM and associated maintenance; guarantees 20-year retention of critical process data without external supervision. |
Use Scenario: Electricity meters retain tariff configuration, billing counters, and tamper logs across frequent grid outages. IC Role / Device Role / Timing Role: Stores firmware context and metering registers during brownouts; RECALL restores full functionality at next power-up. Use Value: Meets IEC 62056 compliance for data integrity; avoids EEPROM wear-out from frequent writes and enables infinite recall cycles. |
| Railway Signaling Controller Memory | Medical Diagnostic Equipment Configuration |
|
Use Scenario: Trackside signaling units maintain interlocking logic states and fault history during transient AC supply dips. IC Role / Device Role / Timing Role: Provides fail-safe memory with sub-100 µs STORE initiation after VCC drop - faster than backup capacitor discharge time. Use Value: Ensures SIL-2 functional safety compliance; no data loss even during <10 ms power interruptions common in rail environments. |
Use Scenario: Portable ultrasound devices store calibration profiles, user preferences, and last-scan parameters between sessions. IC Role / Device Role / Timing Role: Holds configuration data in non-volatile form without requiring boot-time loading from flash or external storage. Use Value: Reduces boot time by >150 ms; avoids NAND/flash wear and read-disturb issues associated with frequent parameter updates. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nvSRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STK14CA8-45I-WH1F | 4-Mbit ×16 nvSRAM, 45 ns access, 3 V, but uses SONOS non-volatile technology and lacks HSB pin | No hardware STORE trigger; relies solely on software STORE or power-loss detection without dedicated status pin | Choose if HSB monitoring is unnecessary and SONOS endurance (100k STORE cycles) suffices for expected field life |
| FM24V10-G | 1-Mbit F-RAM (not nvSRAM), 45 ns, 3 V, unlimited STORE cycles, but lower density and no AutoStore capacitor interface | Eliminates VCAP design complexity but requires continuous VCC monitoring and external STORE command generation | Prefer for ultra-high-write-cycle applications where 4-Mbit density is not required and power-fail detection is already implemented |
Compared with STK14CA8-45I-WH1F and FM24V10-G, the CY14B104NA-ZS45XI uniquely combines 4-Mbit ×16 density, deterministic AutoStore via VCAP, and real-time HSB feedback - making it optimal for industrial systems needing guaranteed atomic STORE without firmware overhead or external supervision.
Availability
CY14B104NA-ZS45XI is available at Aetrix Electronics and suitable for industrial PLCs, smart metering systems, and railway signaling controllers requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.
Supply support for CY14B104NA-ZS45XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets.
The CY14B nvSRAM product line delivers battery-free non-volatility for mission-critical data logging, targeting applications where power interruption resilience and deterministic STORE timing are mandatory.
FAQ
What is the minimum VCAP capacitance required for reliable AutoStore operation?
The CY14B104NA-ZS45XI requires a minimum 0.1 µF ceramic capacitor on the VCAP pin to ensure successful STORE during VCC dropout. This value is validated for worst-case 45 ns access time, industrial temperature, and full 4-Mbit array operation. Lower capacitance may cause incomplete STORE and data corruption.
Can the HSB pin be left unconnected in systems that only use software STORE?
Yes - HSB is optional when using only software STORE/RECALL. However, leaving HSB floating is not recommended; it should be tied to VCC via a 10 kΩ pull-up resistor to prevent noise-induced STORE triggers. The pin has an internal 100 kΩ weak pull-up but benefits from stronger external bias for noise immunity.
Does the CY14B104NA-ZS45XI support byte-level writes in ×16 mode?
Yes - using BHE (DQ15–DQ8) and BLE (DQ7–DQ0) pins, the device enables independent write control of upper and lower bytes within each 16-bit word. This allows partial-word updates without reading-modify-write sequences, preserving SRAM performance and reducing bus traffic.
How does AutoStore behavior change if no VCAP capacitor is installed?
If no VCAP capacitor is installed and AutoStore remains enabled, the device attempts STORE on power loss but lacks sufficient energy - resulting in incomplete or corrupted non-volatile data. The datasheet mandates disabling AutoStore via software sequence (page 8) when VCAP is omitted; otherwise, data integrity cannot be guaranteed.
CY14B104NA-ZS45XI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY14B104NA-ZS45XI FAQ
1.How can I place an order for CY14B104NA-ZS45XI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY14B104NA-ZS45XI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY14B104NA-ZS45XI reliable?
The price and inventory of CY14B104NA-ZS45XI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY14B104NA-ZS45XI is usually 5 days.
3.What payment methods are accepted for CY14B104NA-ZS45XI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY14B104NA-ZS45XI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY14B104NA-ZS45XI?
CY14B104NA-ZS45XI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY14B104NA-ZS45XI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY14B104NA-ZS45XI?
For technical support, including CY14B104NA-ZS45XI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY14B104NA-ZS45XI requirements.
6.How does Aetrix verify that CY14B104NA-ZS45XI is sourced from the original manufacturer or authorized distributors?
All CY14B104NA-ZS45XI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY14B104NA-ZS45XI meets industry standards.
7.What is the process for return or replacement of CY14B104NA-ZS45XI?
All CY14B104NA-ZS45XI units undergo pre-shipment inspection (PSI). If there is an issue with CY14B104NA-ZS45XI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY14B104NA-ZS45XI part is unused and in its original packaging.
Return procedure for CY14B104NA-ZS45XI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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