Infineon Technologies CY14B104NA-ZS45XIT

Overview

CY14B104NA-ZS45XIT from Cypress Semiconductor is a 4-Mbit non-volatile SRAM (nvSRAM) with 256K × 16 organization, 45 ns access time, single 3 V (+20%, –10%) supply, and QuantumTrap non-volatile storage technology. It performs automatic STORE on power-down using an external VCAP capacitor and supports software- or hardware-initiated STORE/RECALL. Used in industrial control modules where deterministic data retention during unexpected power loss is critical.

For engineers reviewing the CY14B104NA-ZS45XIT datasheet, CY14B104NA-ZS45XIT pinout, CY14B104NA-ZS45XIT application, or CY14B104NA-ZS45XIT equivalent, key selection criteria include AutoStore timing compliance, HSB pin behavior during STORE initiation, ×16 bus interface compatibility with BHE/BLE controls, and VCAP capacitor sizing for guaranteed 45 ns STORE completion under worst-case voltage droop.

Technical Context

This nvSRAM integrates parallel SRAM and QuantumTrap non-volatile cells per bit, enabling simultaneous STORE/RECALL across all 256K words without sequential addressing. The architecture decouples volatile read/write latency (45 ns tAA) from non-volatile endurance limits (1 million STORE cycles, 20-year retention).

AutoStore activation relies on internal VCC monitoring: when VCC drops below VSWITCH, the device isolates VCAP and initiates STORE using stored charge. Hardware STORE is triggered by driving HSB low, while software STORE uses a specific address sequence - both require at least one prior SRAM write since last RECALL to execute.

Key Specifications

Pinout & Package

Package: 48-ball fine-pitch ball grid array (FBGA), RoHS-compliant, 7 mm × 9 mm footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nvSRAM applications.

Compared with AS4C4M16SA-6BIN and FM24V10-G, CY14B104NA-ZS45XIT uniquely delivers parallel ×16 SRAM speed with autonomous power-loss STORE - eliminating firmware dependency for data safety in hard real-time industrial systems.

Availability

CY14B104NA-ZS45XIT is available at Aetrix Electronics and suitable for industrial control systems, railway signaling equipment, and medical diagnostic devices requiring stable component supply with guaranteed long-term lifecycle support.

Supply support for CY14B104NA-ZS45XIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets.

CY14B104NA belongs to the QuantumTrap nvSRAM product line, engineered specifically for applications demanding SRAM speed with EEPROM-like non-volatility and zero-battery data retention.

FAQ

What is the minimum VCAP capacitor value required for reliable AutoStore operation?

The CY14B104NA-ZS45XIT requires a minimum 0.1 µF X7R ceramic capacitor on the VCAP pin to guarantee successful STORE completion during a 45 ns access-time-rated power collapse. Lower values risk incomplete STORE and data corruption; larger values extend STORE margin but increase board area and cost without functional benefit.

Does the HSB pin function identically in hardware STORE and AutoStore modes?

Yes - HSB is driven LOW during any active STORE operation (hardware, software, or AutoStore) and returns HIGH upon completion. In AutoStore, HSB assertion is internal and not externally controllable; in hardware STORE, pulling HSB LOW initiates the operation, provided a prior write has occurred since last RECALL.

Can CY14B104NA-ZS45XIT operate in ×8 mode?

No - CY14B104NA is fixed at 256K × 16 organization. The CY14B104LA variant supports 512K × 8. Pinout, address mapping (A0–A17), and data bus width (DQ0–DQ15) are strictly defined for ×16 operation; attempting ×8 use violates device specification and causes undefined behavior.

How does the device prevent spurious STORE operations during power-up?

The CY14B104NA-ZS45XIT inhibits AutoStore until VCC stabilizes above VSWITCH and requires at least one valid SRAM write since the preceding RECALL. This prevents false triggers during brown-in conditions and ensures STORE only occurs after the host has initialized memory and written meaningful data.