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Infineon Technologies CY14B104NA-ZSP25XI

Part No.:
CY14B104NA-ZSP25XI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
54-TSOP (0.400", 10.16mm Width)
Datasheet:
AetrixCY14B104NA-ZSP25XI.pdf
Description:
IC NVSRAM 4MBIT PAR 54TSOP II
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:178

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Product details

Overview

CY14B104NA-ZSP25XI from Cypress Semiconductor is a 4-Mbit non-volatile SRAM (nvSRAM) organized as 256K × 16, featuring QuantumTrap non-volatile storage, 25 ns access time, single 3 V (+20% / –10%) supply operation, and industrial temperature range (–40°C to +85°C). It performs automatic STORE on power-down using an external VCAP capacitor and supports software- or hardware-triggered STORE/RECALL cycles for mission-critical data retention in systems requiring zero-battery backup.

For engineers reviewing the CY14B104NA-ZSP25XI datasheet, CY14B104NA-ZSP25XI pinout, CY14B104NA-ZSP25XI application, or CY14B104NA-ZSP25XI equivalent, key selection considerations include ×16 bus width support, HSB-controlled hardware STORE timing, VCAP capacitor sizing (0.1 µF), BHE/ BLE byte enable functionality, and compatibility with legacy SRAM interfaces without redesign.

Technical Context

The CY14B104NA-ZSP25XI integrates standard SRAM array (2048 × 2048) with parallel QuantumTrap non-volatile elements per cell, enabling simultaneous STORE/RECALL across all 256K words. Its architecture inhibits SRAM access during STORE/RECALL, with dedicated control logic for AutoStore activation via VCAP voltage monitoring at VSWITCH threshold.

It implements three STORE initiation modes-AutoStore (power-loss triggered), Hardware STORE (HSB pin assertion), and Software STORE (address sequence)-with conditional execution: STORE only proceeds if at least one write occurred since last RECALL, except for software-initiated cycles which execute unconditionally.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density4 Mbit (256K × 16 organization)
Access Time25 ns - determines maximum SRAM read/write cycle rate in synchronous systems
Supply Voltage3.0 V ±10% / +20% - compatible with standard 3.3 V rails with margin for droop
Data Retention20 years - guaranteed non-volatile data hold without power or refresh
STORE Endurance1 million cycles - defines maximum number of power-loss or manual STORE events before wear-out
Operating Temperature–40°C to +85°C - qualified for industrial environments without derating
VCAP Capacitor0.1 µF - required external capacitor value for reliable AutoStore operation

Pinout & Package

Package: 48-ball fine-pitch ball grid array (FBGA), RoHS-compliant, industrial-grade thermal profile.

Pin/TerminalCircuit RoleDesign Meaning
A0–A17Address Input18-bit address bus for 256K-word addressing; A0 LSB, A17 MSB
DQ0–DQ15Bidirectional Data I/O16-bit parallel data path; supports full-word reads/writes without byte masking
CE, OE, WEControl InputsStandard SRAM control triad: chip enable (active-low), output enable (active-low), write enable (active-low)
BHE, BLEByte Enable InputsActive-low controls for upper (DQ15–DQ8) and lower (DQ7–DQ0) bytes in ×16 mode
HSBHardware STORE BusyOpen-drain status/output: driven LOW during STORE; pulled HIGH post-completion; initiates STORE when externally asserted
VCAPAutoStore Capacitor SupplyInternal regulator output node; connects to 0.1 µF capacitor to sustain STORE during VCC collapse
VCC, VSSPower/GroundSingle 3 V supply and ground reference; no separate I/O or core voltage rails

Key Features

FeatureDesign Value
QuantumTrap Non-Volatile CellEmbedded per-cell storage eliminates need for external battery or EEPROM backup
AutoStore on Power LossAutomatic, capacitor-powered STORE triggered by VCC drop below VSWITCH - no firmware or host intervention required
Three STORE Initiation ModesHardware (HSB pin), software (address sequence), and AutoStore - enables flexible system-level data protection strategies
Conditional STORE ExecutionPrevents spurious STOREs: only executes if SRAM has been written since last STORE/RECALL - reduces wear on non-volatile elements
×16 Bus Interface CompatibilityFull 16-bit DQ bus with BHE/ BLE enables drop-in replacement for standard 256K × 16 SRAMs in existing designs

Applications

Industrial PLC Data LoggingMedical Device Parameter Storage

Use Scenario: Retaining real-time sensor calibration values and operational logs during unexpected AC mains failure or battery swap.

IC Role / Device Role / Timing Role: Non-volatile memory buffer that captures volatile runtime data before power collapse, using AutoStore with 0.1 µF VCAP.

Use Value: Eliminates supercapacitor or lithium battery backup circuitry while guaranteeing 20-year data retention and 1M STORE endurance.

Use Scenario: Preserving patient-specific therapy settings and device configuration across power cycles in infusion pumps and defibrillators.

IC Role / Device Role / Timing Role: SRAM-compatible nvSRAM providing immediate recall on power-up and deterministic STORE on shutdown via HSB or software command.

Use Value: Meets IEC 62304 Class C safety requirements by ensuring critical parameters survive loss of primary power without external energy storage.

Telecom Base Station ConfigurationAutomotive ADAS ECU Calibration

Use Scenario: Storing radio channel maps, firmware patch metadata, and RF tuning coefficients in remote radio units subject to frequent brownouts.

IC Role / Device Role / Timing Role: ×16 interface nvSRAM acting as persistent configuration store with BHE/ BLE byte-select capability for partial updates.

Use Value: Enables field-upgradable configurations without requiring full memory rewrites or external flash translation layers.

Use Scenario: Holding camera sensor alignment offsets and radar fusion parameters in autonomous driving ECUs where power interruption may occur during vehicle ignition cycles.

IC Role / Device Role / Timing Role: High-reliability nvSRAM performing RECALL at power-up and AutoStore on engine-off, synchronized to vehicle CAN wake-up signals.

Use Value: Reduces boot-time latency versus flash-based alternatives and avoids EEPROM wear-out limitations in high-write-rate calibration workflows.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nvSRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY14B104LA-ZS25XISame density and timing but ×8 organization (512K × 8); lacks BHE/ BLE pins; uses A0–A18 addressingRequires 8-bit data bus and different address decoding; not pin-compatible with ×16 layoutSelect only when system uses 8-bit microcontroller or FPGA interface with no byte-enable requirement
FM24V10-GF-RAM-based 1 Mbit (128K × 8); 40 MHz SPI interface; no VCAP capacitor or STORE timing constraintsSerial interface replaces parallel bus; eliminates address/control pin count but adds protocol overheadChoose for space-constrained designs where serial interface suffices and STORE latency must be sub-100 ns

Compared with CY14B104LA-ZS25XI, the CY14B104NA-ZSP25XI offers native ×16 bus efficiency and byte-select granularity, while FM24V10-G trades parallel simplicity for serial footprint reduction and unlimited endurance - making CY14B104NA optimal for high-throughput industrial SRAM drop-ins needing deterministic STORE timing.

Availability

CY14B104NA-ZSP25XI is available at Aetrix Electronics and suitable for industrial PLC data logging, medical device parameter storage, and telecom base station configuration requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for CY14B104NA-ZSP25XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in memory, microcontrollers, and connectivity solutions for industrial, automotive, and consumer markets.

The CY14B nvSRAM product line was designed specifically to replace battery-backed SRAM in mission-critical systems, delivering seamless SRAM compatibility with integrated QuantumTrap non-volatile storage and zero-maintenance data retention.

FAQ

What is the function of the VCAP pin and what capacitor value is required?

The VCAP pin supplies regulated power to the internal QuantumTrap STORE circuit during VCC collapse. A 0.1 µF ceramic capacitor must be connected between VCAP and VSS to ensure sufficient charge for one complete STORE operation. Using a smaller capacitor risks incomplete STORE and data corruption; larger values do not improve reliability and may delay power-up RECALL timing.

How does the HSB pin operate during STORE and what external circuitry is needed?

HSB is an open-drain pin with internal 100 kΩ weak pull-up. It is driven LOW by the device during any STORE operation (AutoStore, Hardware, or Software) and returns HIGH upon completion. No external pull-up is mandatory, but a 10 kΩ resistor to VCC improves noise immunity. External assertion of HSB LOW initiates Hardware STORE after tDELAY, provided a prior write occurred.

Can CY14B104NA-ZSP25XI be used as a direct replacement for standard 256K × 16 SRAMs?

Yes - it is pin- and timing-compatible with industry-standard 256K × 16 asynchronous SRAMs, including identical CE/OE/WE timing, address/data bus mapping, and BHE/ BLE byte enable behavior. No changes to PCB layout or firmware timing are required; however, VCAP capacitor addition and optional HSB monitoring are necessary to enable non-volatile functionality.

What happens if AutoStore is enabled but no VCAP capacitor is installed?

If AutoStore is enabled (default state) and no capacitor is connected to VCAP, the device attempts STORE on power loss using insufficient charge, resulting in incomplete transfer and corrupted data in the non-volatile array. To prevent this, AutoStore must be disabled via the software sequence documented in the datasheet (page 8) before operating without VCAP.

CY14B104NA-ZSP25XI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
54-TSOP (0.400", 10.16mm Width)
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
NVSRAM
Technology:
NVSRAM (Non-Volatile SRAM)
Memory Size:
4Mbit
Memory Organization:
256K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
25ns
Access Time:
25 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
54-TSOP II

CY14B104NA-ZSP25XI FAQ

1.How can I place an order for CY14B104NA-ZSP25XI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY14B104NA-ZSP25XI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY14B104NA-ZSP25XI reliable?

The price and inventory of CY14B104NA-ZSP25XI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY14B104NA-ZSP25XI is usually 5 days.

3.What payment methods are accepted for CY14B104NA-ZSP25XI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY14B104NA-ZSP25XI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY14B104NA-ZSP25XI?

CY14B104NA-ZSP25XI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY14B104NA-ZSP25XI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY14B104NA-ZSP25XI?

For technical support, including CY14B104NA-ZSP25XI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY14B104NA-ZSP25XI requirements.

6.How does Aetrix verify that CY14B104NA-ZSP25XI is sourced from the original manufacturer or authorized distributors?

All CY14B104NA-ZSP25XI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY14B104NA-ZSP25XI meets industry standards.

7.What is the process for return or replacement of CY14B104NA-ZSP25XI?

All CY14B104NA-ZSP25XI units undergo pre-shipment inspection (PSI). If there is an issue with CY14B104NA-ZSP25XI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY14B104NA-ZSP25XI part is unused and in its original packaging.

Return procedure for CY14B104NA-ZSP25XI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY14B104NA-ZSP25XI Tags

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