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Infineon Technologies CY14B104N-BA20XCT

Part No.:
CY14B104N-BA20XCT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
48-TFBGA
Datasheet:
AetrixCY14B104N-BA20XCT.pdf
Description:
IC NVSRAM 4MBIT PARALLEL 48FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,409

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Product details

Overview

CY14B104N-BA20XCT from Cypress Semiconductor is a 4 Mbit nonvolatile SRAM (nvSRAM) with QuantumTrap® technology, organized as 256K × 16 bits, operating at 3V (±10%), supporting 20 ns access time, infinite SRAM read/write cycles, and 200,000 STORE cycles - used in industrial control systems requiring persistent memory retention during power loss.

For engineers reviewing the CY14B104N-BA20XCT datasheet, CY14B104N-BA20XCT pinout, CY14B104N-BA20XCT application, or CY14B104N-BA20XCT equivalent, key selection considerations include x16 bus interface support, HSB-driven hardware store control, VCAP-based AutoStore timing, and BHE/ BLE byte enable compatibility with 16-bit microprocessor data buses.

Technical Context

The CY14B104N implements dual-function memory cells combining standard SRAM for volatile operation and QuantumTrap nonvolatile elements for data retention. It supports three STORE initiation methods: software address sequence, HSB pin assertion, and automatic VCAP-powered store on VCC drop below VSWITCH (2.7 V typical).

RECALL occurs automatically on power-up when VCC exceeds VSWITCH, or via software sequence; both operations inhibit SRAM access until completion. The device uses A0–A17 addressing and DQ0–DQ15 bidirectional I/O with BHE/ BLE controls - exclusive to x16 configuration - and includes open-drain HSB for hardware store status signaling and initiation.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 4 Mbit (256K × 16), enabling direct interface with 16-bit MPU data buses without external demultiplexing.
Access Time 20 ns max - ensures compatibility with high-speed 50 MHz bus timing in real-time PLC and motion controller designs.
Supply Voltage 3.0 V ±10% (2.7–3.6 V) - matches standard 3.3 V system rails while tolerating brown-out conditions before AutoStore triggers.
STORE Endurance 200,000 cycles - defines maximum guaranteed nonvolatile write events before QuantumTrap cell wear-out.
Data Retention 20 years at +85°C - guarantees long-term data integrity in unpowered industrial environments without backup batteries.
Operating Temperature –40°C to +85°C - qualified for extended temperature range deployment in factory automation and outdoor embedded gateways.
Package 48-ball FBGA (9 mm × 9 mm, 0.8 mm pitch) - supports high-density PCB layouts with thermal and signal integrity advantages over TSOP II.

Pinout & Package

Package: 48-ball Fine-Pitch Ball Grid Array (FBGA), RoHS-compliant, 9 mm × 9 mm body, 0.8 mm ball pitch, bottom-side thermal pad optional.

Pin/Terminal Circuit Role Design Meaning
A0–A17 Input 18-bit address bus for 256K-word selection; no A18 required in x16 mode - simplifies MPU address line routing.
DQ0–DQ15 Input/Output Bidirectional 16-bit data bus; supports concurrent transfer of full word - eliminates need for two 8-bit cycles per access.
CE, WE, OE Input Standard SRAM control trio (chip enable, write enable, output enable), all active-low - integrates seamlessly with legacy MPU timing.
BHE, BLE Input Byte enable controls for upper/lower 8 bits of DQ bus - enables partial-word writes without read-modify-write overhead.
HSB Input/Output Open-drain hardware store busy/status pin - signals ongoing STORE (LOW) and allows external initiation of nonvolatile save.
VCAP Power Supply AutoStore capacitor connection point - requires 0.1 µF ceramic capacitor to sustain ~10 ms store operation during VCC collapse.
VCC, VSS Power/Ground Single 3V supply and ground pins - eliminates dual-rail complexity and reduces decoupling component count.

Key Features

Feature Design Value
QuantumTrap® Nonvolatile Cell Embedded per-cell nonvolatile storage enabling true nvSRAM behavior - no external EEPROM or battery required for data persistence.
AutoStore® on Power Loss Automatic STORE triggered by VCC drop below 2.7 V using charge stored on external VCAP capacitor - eliminates firmware dependency for critical save.
Hardware Store Busy (HSB) Real-time open-drain status signal indicating STORE progress - allows host MCU to synchronize critical tasks around nonvolatile save latency.
Software STORE/RECALL Sequences Six-address CE-controlled read sequences (e.g., 0x4E38 → 0x8FC0) initiate STORE; identical pattern ending in 0x4C63 triggers RECALL - enables deterministic, debuggable firmware control.
x16 Bus Interface with Byte Enables BHE/ BLE pins allow selective 8-bit writes within 16-bit word - reduces bus traffic and avoids corruption risk in multi-threaded or interrupt-driven contexts.

Applications

Industrial PLC Data Logging Medical Device Configuration Storage

Use Scenario: Storing runtime parameters, calibration offsets, and alarm history in programmable logic controllers during unexpected AC mains failure.

IC Role / Device Role / Timing Role: Nonvolatile SRAM providing immediate read/write access during operation and atomic STORE on brown-out - replaces battery-backed SRAM with zero maintenance.

Use Value: Eliminates battery replacement service intervals and avoids data loss during 10–100 ms power glitches common in factory floor environments.

Use Scenario: Retaining patient-specific therapy settings and device calibration data across power cycles in portable infusion pumps and diagnostic monitors.

IC Role / Device Role / Timing Role: High-reliability memory holding safety-critical configuration that must survive >20 years without refresh - certified under IEC 62304 Class C requirements.

Use Value: Meets 20-year data retention spec at +85°C, removing need for redundant EEPROM writes and associated wear-leveling firmware complexity.

Telecom Base Station Status Buffer Automotive ADAS Event Recorder

Use Scenario: Capturing last-known operational state (e.g., RF channel map, sync status, fault flags) in remote radio units during grid instability or backup generator switchover.

IC Role / Device Role / Timing Role: x16 interface enables fast dump of 256K-word status snapshot; HSB pin allows baseband processor to pause transmission mid-frame before STORE begins.

Use Value: 20 ns access time ensures status capture completes before watchdog timeout, and AutoStore guarantees recovery without manual intervention.

Use Scenario: Recording pre-crash sensor data (accelerometer, radar timestamp, CAN bus state) in automotive advanced driver assistance systems with <100 µs STORE latency.

IC Role / Device Role / Timing Role: Hardware-initiated STORE via HSB pin triggered by airbag ECU - bypasses OS scheduling delay to guarantee sub-millisecond save initiation.

Use Value: Meets ISO 26262 ASIL-B requirement for deterministic nonvolatile save path independent of software stack execution state.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
FM24V04-G from Cypress (now Infineon) 4 Mbit F-RAM with 15 ns access, unlimited endurance, but lacks AutoStore and HSB pin - requires external power-fail detection circuitry. No built-in power-loss detection or hardware store trigger - increases BOM cost and design complexity for brown-out response. Choose for ultra-high endurance (>10¹⁴ cycles) where firmware-controlled save suffices and VCAP simplicity is not required.
MB85RS4MT from Fujitsu (now Cypress/Infineon) 4 Mbit FRAM with SPI interface, 25 MHz clock, no parallel bus - incompatible with x16 MPU interfaces without bridge logic. Requires serial-to-parallel translation for legacy 16-bit bus systems - adds latency, footprint, and driver software overhead. Choose only for new designs with SPI-native controllers; unsuitable as drop-in replacement for CY14B104N-BA20XCT's parallel interface.

Compared with FM24V04-G and MB85RS4MT, CY14B104N-BA20XCT uniquely delivers parallel x16 interface, integrated AutoStore with VCAP, and HSB-driven hardware synchronization - making it the sole option for deterministic, low-latency, battery-free nonvolatile storage in MPU-based industrial systems.

Availability

CY14B104N-BA20XCT is available at Aetrix Electronics and suitable for industrial control systems, medical instrumentation, telecom infrastructure, and automotive ADAS modules requiring stable component supply with guaranteed long-term availability and traceable sourcing.

Supply support for CY14B104N-BA20XCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-reliability memory, PSoC, and USB/USB-C solutions for industrial, automotive, and computing markets.

CY14B104N belongs to Cypress's nvSRAM product line, designed specifically to replace battery-backed SRAM in mission-critical systems where maintenance-free, long-life, and deterministic power-loss data preservation are mandatory.

FAQ

What is the function of the VCAP pin, and what capacitor value is required?

The VCAP pin connects to an external 0.1 µF ceramic capacitor that supplies energy for AutoStore during VCC collapse. When VCC drops below 2.7 V, the internal regulator disconnects VCAP from VCC and uses its stored charge to complete one full STORE cycle (~10 ms). The capacitor must be placed within 5 mm of the VCAP pin with low-inductance layout to ensure reliable operation.

How does the HSB pin operate during a STORE cycle?

HSB is an open-drain pin that the device drives LOW during any STORE operation (hardware, software, or AutoStore) to indicate busy status. When externally pulled LOW, it initiates a conditional STORE after tDELAY (100 ns), provided at least one SRAM write occurred since the last STORE or RECALL. After completion, HSB releases HIGH, signaling readiness for next access.

Can CY14B104N-BA20XCT be used in x8 mode?

No - CY14B104N is exclusively configured as 256K × 16 (x16); the "N" suffix denotes x16 organization. The CY14B104L variant supports 512K × 8 (x8). Pinouts, address mapping (A0–A17), and DQ count (DQ0–DQ15) are fixed for x16 operation, and BHE/ BLE pins are only functional in this mode.

What happens if the software STORE sequence is interrupted?

If any address in the six-step sequence (0x4E38 → 0x8FC0) is skipped, misordered, or followed by another access before tSS (soft-sequence processing time), the sequence aborts and no STORE occurs. The device remains in normal SRAM mode with no side effects - no data corruption, no state lockup, and no reset required.

CY14B104N-BA20XCT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
48-TFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
NVSRAM
Technology:
NVSRAM (Non-Volatile SRAM)
Memory Size:
4Mbit
Memory Organization:
256K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
20ns
Access Time:
20 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-FBGA (6x10)

CY14B104N-BA20XCT FAQ

1.How can I place an order for CY14B104N-BA20XCT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY14B104N-BA20XCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY14B104N-BA20XCT reliable?

The price and inventory of CY14B104N-BA20XCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY14B104N-BA20XCT is usually 5 days.

3.What payment methods are accepted for CY14B104N-BA20XCT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY14B104N-BA20XCT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY14B104N-BA20XCT?

CY14B104N-BA20XCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY14B104N-BA20XCT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY14B104N-BA20XCT?

For technical support, including CY14B104N-BA20XCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY14B104N-BA20XCT requirements.

6.How does Aetrix verify that CY14B104N-BA20XCT is sourced from the original manufacturer or authorized distributors?

All CY14B104N-BA20XCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY14B104N-BA20XCT meets industry standards.

7.What is the process for return or replacement of CY14B104N-BA20XCT?

All CY14B104N-BA20XCT units undergo pre-shipment inspection (PSI). If there is an issue with CY14B104N-BA20XCT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY14B104N-BA20XCT part is unused and in its original packaging.

Return procedure for CY14B104N-BA20XCT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY14B104N-BA20XCT Tags

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