Infineon Technologies CY14B104N-BA20XI

Overview

CY14B104N-BA20XI from Cypress Semiconductor is a 4 Mbit nonvolatile SRAM (nvSRAM) with 256K × 16 organization, 20 ns access time, single 3V (+20% to –10%) supply, and QuantumTrap® nonvolatile storage. It performs automatic STORE on power loss using VCAP capacitor, supports software/hardware-initiated STORE/RECALL, and delivers 20-year data retention with 200,000 STORE cycles. Used in industrial controllers for real-time parameter backup during brownout.

For engineers reviewing the CY14B104N-BA20XI datasheet, CY14B104N-BA20XI pinout, CY14B104N-BA20XI application, or CY14B104N-BA20XI equivalent, key selection criteria include x16 bus width support, HSB pin behavior for hardware store acknowledgment, VCAP capacitor sizing (0.1 µF), AutoStore enable/disable sequence, and BHE/ BLE byte enable compatibility with 16-bit microprocessor interfaces.

Technical Context

The CY14B104N implements a dual-cell architecture pairing standard SRAM with embedded QuantumTrap nonvolatile elements per cell. STORE transfers data from SRAM to nonvolatile cells; RECALL restores it on power-up or via software. All 256K words are stored/recalled in parallel, with SRAM operations inhibited during both operations.

AutoStore triggers when VCC drops below VSWITCH (~2.7 V), disconnecting VCAP from VCC and using its stored charge to complete one STORE cycle. The HSB pin serves as both input (to initiate hardware STORE) and open-drain output (driven LOW during any active STORE), enabling system-level coordination without polling.

Key Specifications

Pinout & Package

Package: 48-ball Fine-Pitch Ball Grid Array (FBGA), 6 mm × 8 mm, 0.8 mm ball pitch, RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Compared with FM24V10-G and AS4C4M16SA-6TCN, the CY14B104N-BA20XI uniquely delivers deterministic 20 ns parallel access, hardware-managed STORE/RECALL with HSB signaling, and zero-software backup - making it optimal for real-time industrial systems where SRAM timing and power-loss autonomy are non-negotiable.

Availability

CY14B104N-BA20XI is available at Aetrix Electronics and suitable for industrial PLCs, medical infusion pumps, energy metering systems, and transportation HMIs requiring stable component supply with guaranteed long-term availability and traceable sourcing.

Supply support for CY14B104N-BA20XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and IoT applications.

The CY14B nvSRAM product line targets systems needing battery-free, fast-access nonvolatile memory - specifically engineered for deterministic power-loss data capture in mission-critical control equipment.

FAQ

What is the minimum VCAP capacitor value required for reliable AutoStore operation?

The CY14B104N-BA20XI requires a 0.1 µF X7R ceramic capacitor rated for ≥10 V between VCAP and VSS. This value ensures sufficient energy for one full STORE cycle at VCC = 3.0 V and T = 85°C. Larger capacitors do not extend STORE capability but improve margin under rapid VCC droop.

Can the HSB pin be left unconnected if hardware STORE is not used?

Yes - HSB has an internal weak pull-up and may be left floating if unused. However, if the system monitors HSB for STORE completion, it must be externally pulled up to VCC with a 10 kΩ resistor to ensure clean HIGH-to-LOW transition detection during STORE initiation.

Does the CY14B104N-BA20XI support true 16-bit writes without byte masking?

No - it requires BHE# and BLE# to select upper or lower byte during 16-bit writes. Both signals must be controlled by the host processor; asserting only one enables 8-bit access to DQ8–DQ15 (BHE#) or DQ0–DQ7 (BLE#), while deasserting both permits full 16-bit transfer.

How does the AutoStore disable sequence affect ongoing SRAM operations?

The AutoStore disable sequence (six CE-controlled reads ending at 0x8B45) takes effect immediately after completion and does not interrupt active SRAM reads/writes. Once disabled, AutoStore remains inactive until explicitly re-enabled via the 0x4C63 RECALL sequence - no STORE occurs even during VCC dropout.