Infineon Technologies CY14B104N-BA20XIT

Overview

CY14B104N-BA20XIT from Cypress Semiconductor is a 4 Mbit nonvolatile SRAM (nvSRAM) with 256K × 16 organization, 20 ns access time, single 3V (+20% to –10%) supply, and QuantumTrap® nonvolatile storage. It performs automatic STORE on power loss using VCAP capacitor, supports software/hardware-initiated STORE/RECALL, and delivers 20-year data retention with 200,000 STORE cycles. Used in industrial control systems requiring persistent memory without battery backup.

For engineers reviewing the CY14B104N-BA20XIT datasheet, CY14B104N-BA20XIT pinout, CY14B104N-BA20XIT application, or CY14B104N-BA20XIT equivalent, key selection considerations include x16 bus width support, HSB-driven hardware store timing, VCAP capacitor sizing, and compatibility with legacy SRAM interfaces requiring infinite write endurance and deterministic recall behavior.

Technical Context

The CY14B104N-BA20XIT integrates parallel SRAM and QuantumTrap nonvolatile cells per bit, enabling simultaneous STORE/RECALL across all 256K words. Its architecture decouples volatile read/write (infinite cycles) from nonvolatile STORE (200k cycles) and RECALL (infinite), with hardware store triggered by HSB pin assertion or VCC drop below VSWITCH.

It operates in x16 mode with dedicated BHE/BLE byte enables, supports CE/OE/WE-controlled SRAM access, and uses six-address software sequences for STORE, RECALL, and AutoStore enable/disable - all validated via internal address decode logic without external state machines.

Key Specifications

Pinout & Package

Package: 48-ball FBGA (7 mm × 9 mm, 0.8 mm pitch), RoHS-compliant, moisture-sensitive level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Compared with STK14C88-3A35I and FM24V10-G, the CY14B104N-BA20XIT uniquely combines autonomous power-loss STORE, 20 ns speed, and battery-free operation - making it optimal for safety-critical industrial and medical systems where firmware intervention cannot be trusted during failure events.

Availability

CY14B104N-BA20XIT is available at Aetrix Electronics and suitable for industrial automation, medical instrumentation, and telecom infrastructure requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for CY14B104N-BA20XIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets.

The CY14B nvSRAM product line targets applications needing SRAM-speed performance with guaranteed nonvolatile data retention - specifically engineered to replace battery-backed SRAM in harsh, maintenance-free environments.

FAQ

What is the minimum VCAP capacitor value required for reliable AutoStore operation?

The CY14B104N-BA20XIT requires a 0.1 µF ±20% X7R ceramic capacitor connected between VCAP and VSS. This value ensures sufficient energy for one full STORE cycle at worst-case VCC dropout rate and temperature. Larger capacitors do not improve reliability but extend STORE window marginally; undersized capacitors risk incomplete STORE and data corruption.

Can the HSB pin be left unconnected if hardware STORE is not used?

Yes - the HSB pin has an internal weak pull-up and may be left floating if hardware STORE initiation and busy indication are unused. However, it must never be tied HIGH externally, as this would prevent AutoStore or software STORE from driving it LOW during operation, violating timing specifications in the datasheet.

Does the CY14B104N-BA20XIT support partial-word STORE operations?

No - STORE always transfers the entire 256K × 16 memory array in parallel. There is no provision for selective STORE of subsets of memory. Byte enables (BHE/BLE) affect only SRAM write operations; they do not gate nonvolatile STORE or RECALL actions.

How does the AutoStore disable sequence affect power-up RECALL behavior?

Disabling AutoStore via the 0x8B45 sequence only suppresses automatic STORE on power loss - it does not inhibit power-up RECALL. RECALL remains fully functional and occurs automatically whenever VCC rises above VSWITCH, regardless of AutoStore enable state, ensuring consistent boot-time data restoration.