Infineon Technologies CY14B104N-BA25XC

Overview

CY14B104N-BA25XC from Cypress Semiconductor is a 4 Mbit nonvolatile SRAM (nvSRAM) with QuantumTrap® technology, organized as 256K × 16 bits, supporting 25 ns access time, single 3V ±10% supply, and automatic STORE on power loss using an external VCAP capacitor. It serves as drop-in SRAM replacement in mission-critical industrial control and data logging systems requiring guaranteed data retention during unexpected power failure.

For engineers reviewing the CY14B104N-BA25XC datasheet, CY14B104N-BA25XC pinout, CY14B104N-BA25XC application, or CY14B104N-BA25XC equivalent, key selection criteria include x16 bus interface compatibility, hardware STORE/RECALL timing (tSTORE = 15 ms typ., tRECALL = 12 ms typ.), VCAP capacitor sizing (0.1 µF), HSB pin behavior for store-busy indication, and BHE/ BLE byte enable support for 16-bit systems.

Technical Context

This nvSRAM integrates parallel SRAM and QuantumTrap nonvolatile storage per cell, enabling infinite SRAM read/write cycles and 200,000 STORE cycles with 20-year data retention. STORE operations occur automatically at power-down (via VCAP), via software address sequence (0x4E38–0x8FC0), or hardware trigger (HSB pin low).

RECALL restores data on power-up or via software (0x4E38–0x4C63); both operations inhibit SRAM access. The device supports x16 configuration with A0–A17 addressing, DQ0–DQ15 bidirectional I/O, and active-low CE/WE/OE/BHE/BLE controls - all compliant with TSOP II and FBGA packaging variants.

Key Specifications

Pinout & Package

Package: 44-pin TSOP II (Type II), RoHS-compliant, surface-mount, 400 mil body width. Pin pitch: 0.8 mm. Compatible with standard reflow profiles.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Compared with FM24V04 and MB85RS4MT, CY14B104N-BA25XC offers native parallel x16 interface, deterministic 25 ns SRAM timing, and capacitor-based AutoStore - making it optimal for legacy 16-bit MPU designs needing seamless nvSRAM integration without protocol translation or layout changes.

Availability

CY14B104N-BA25XC is available at Aetrix Electronics and suitable for industrial PLCs, medical diagnostics equipment, and telecom infrastructure requiring stable component supply, long-lifecycle assurance, and RoHS-compliant packaging.

Supply support for CY14B104N-BA25XC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets.

CY14B104N belongs to the QuantumTrap nvSRAM product line, engineered specifically to replace battery-backed SRAM and EEPROM in systems demanding instant-on nonvolatility with SRAM performance.

FAQ

What is the minimum VCAP capacitor value required for reliable AutoStore operation?

The CY14B104N-BA25XC requires a 0.1 µF ±20% X7R ceramic capacitor on the VCAP pin, placed within 5 mm of the package per layout guidelines. This value ensures sufficient stored energy to complete one full STORE cycle even under worst-case VCC dropout slope (10 V/ms) and ambient temperature (85°C). Larger capacitors do not improve reliability and may slow power-up timing.

Can HSB be left unconnected if hardware STORE is not used?

Yes - HSB has an internal weak pull-up and may be left floating if unused. However, leaving it unconnected forfeits real-time STORE/RECALL status monitoring and eliminates the ability to externally trigger a hardware STORE. For systems requiring deterministic save initiation (e.g., firmware-controlled shutdown), HSB must be actively driven and monitored.

Does the software STORE sequence require OE to be asserted?

No - the software STORE sequence (0x4E38 → 0xB1C7 → 0x83E0 → 0x7C1F → 0x703F → 0x8FC0) relies solely on CE-controlled reads; OE may be HIGH or LOW. However, OE must remain stable during the entire six-cycle sequence, and no intervening writes or address changes are permitted - otherwise the sequence aborts and no STORE occurs.

How does CY14B104N-BA25XC handle simultaneous SRAM access during AutoStore?

During AutoStore (triggered by VCC drop below VSWITCH), the device completes any in-progress SRAM read/write before initiating STORE. Once STORE begins, all SRAM access is inhibited until completion (~15 ms). The HSB pin goes LOW to signal this busy state, allowing the host to halt further transactions and prevent data corruption.