Infineon Technologies CY14B104N-BA25XCT

Overview

CY14B104N-BA25XCT from Cypress Semiconductor is a 4 Mbit nonvolatile SRAM (nvSRAM) with 256K × 16 organization, 25 ns access time, single 3V (+20% to –10%) supply, and QuantumTrap® nonvolatile storage. It performs automatic STORE on power loss using VCAP capacitor, supports software/hardware-initiated STORE/RECALL, and delivers 20-year data retention with 200,000 STORE cycles. Used in industrial controllers for real-time parameter backup during brownout.

For engineers reviewing the CY14B104N-BA25XCT datasheet, CY14B104N-BA25XCT pinout, CY14B104N-BA25XCT application, or CY14B104N-BA25XCT equivalent, key selection criteria include x16 bus interface support, HSB-driven hardware store timing, VCAP capacitor sizing (0.1 µF), AutoStore enable/disable sequence, and BHE/ BLE byte-enable control for 16-bit word access.

Technical Context

This nvSRAM integrates parallel SRAM and QuantumTrap nonvolatile cells per bit, enabling simultaneous infinite SRAM read/write cycles and deterministic STORE/RECALL operations. The device uses internal voltage monitoring (VSWITCH threshold) to trigger AutoStore when VCC drops, and employs a regulated VCAP charge path to sustain STORE execution without external power.

STORE is conditionally initiated-only after at least one SRAM write since last STORE/RECALL-while RECALL occurs automatically on power-up or via software sequence. HSB serves dual role: open-drain status indicator (LOW = busy) and active-LOW hardware trigger, with tDELAY delay before STORE start to complete pending SRAM transactions.

Key Specifications

Pinout & Package

Package: 48-ball FBGA (6 mm × 8 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nvSRAM applications.

Compared with STK14C88-3L35I and FM24V10-G, CY14B104N-BA25XCT uniquely combines x16 bus support, integrated HSB signaling, conditional AutoStore, and 25 ns speed-making it optimal for 16-bit industrial MPU designs requiring deterministic, low-component-count nonvolatile memory.

Availability

CY14B104N-BA25XCT is available at Aetrix Electronics and suitable for industrial automation, medical diagnostics, automotive body electronics, and telecom infrastructure requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for CY14B104N-BA25XCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets, with focus on integration, low-power operation, and robustness.

CY14B104N belongs to the QuantumTrap nvSRAM product line, engineered specifically for applications demanding SRAM-speed access with battery-free, capacitor-backed nonvolatility-targeting systems where data integrity during power failure is mission-critical.

FAQ

What is the minimum VCAP capacitor value required for reliable AutoStore operation?

The CY14B104N-BA25XCT requires a 0.1 µF X7R ceramic capacitor rated for ≥6.3 V, placed within 5 mm of the VCAP pin with low-ESR (< 1 Ω) and low-ESL layout. This value ensures sufficient stored energy to complete one full STORE cycle even at worst-case VCC droop rate and temperature (–40°C to +85°C). Larger capacitors do not extend endurance but improve margin against rapid VCC collapse.

How does the conditional STORE feature prevent premature wear of the QuantumTrap cells?

The device internally tracks whether any SRAM write has occurred since the last STORE or RECALL. Only if at least one valid write took place will AutoStore or hardware STORE (via HSB) be executed. This prevents spurious STOREs during idle periods or read-only operation, extending usable life toward the rated 200,000 cycles. Software STORE bypasses this check and always executes.

Can the CY14B104N-BA25XCT be used in a 3.3V system with a 2.5V I/O interface?

No-the CY14B104N-BA25XCT operates exclusively from a single 3.0 V to 3.6 V supply (VCC) and has no separate I/O voltage rail. All inputs (CE, WE, OE, A0–A17, BHE, BLE, HSB) and outputs (DQ0–DQ15) are referenced to VCC and tolerate only 0 V to VCC levels. Interfacing with 2.5V logic requires level translation on all control and data lines.

What happens to ongoing SRAM reads or writes when HSB is pulled LOW to initiate a hardware STORE?

When HSB is driven LOW, the device completes any in-progress SRAM read or write cycle within tDELAY (max 100 ns), then inhibits further SRAM access and begins the STORE operation. During STORE, DQ pins are tri-stated, and CE/WE/OE are ignored. HSB remains LOW until STORE completion, providing unambiguous hardware handshake for system synchronization.