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Infineon Technologies CY14B104N-BA25XI
- Part No.:
- CY14B104N-BA25XI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
CY14B104N-BA25XI.pdf
- Description:
- IC NVSRAM 4MBIT PARALLEL 48FBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,406
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Product details
Overview
CY14B104N-BA25XI from Cypress Semiconductor is a 4 Mbit nonvolatile SRAM (nvSRAM) with 256K × 16 organization, 25 ns access time, single 3V (+20% to –10%) supply, and QuantumTrap® nonvolatile storage. It performs automatic STORE on power loss using VCAP capacitor support and supports software/hardware-initiated STORE/RECALL. Used in industrial control systems requiring persistent memory without battery backup.
For engineers reviewing the CY14B104N-BA25XI datasheet, CY14B104N-BA25XI pinout, CY14B104N-BA25XI application, or CY14B104N-BA25XI equivalent, key selection criteria include x16 bus width compatibility, HSB-driven hardware store timing, VCAP capacitor sizing (0.1 µF), AutoStore enable/disable sequence, and 200,000 STORE cycle endurance.
Technical Context
The CY14B104N implements a dual-cell architecture: standard SRAM for high-speed read/write and integrated QuantumTrap nonvolatile elements per cell. STORE transfers data from SRAM to nonvolatile storage; RECALL restores it on power-up - both operations occur in parallel across all cells.
It supports three STORE initiation methods: AutoStore (triggered by VCC drop below VSWITCH), hardware STORE (via active-low HSB assertion), and software STORE (six-address CE-read sequence). RECALL is triggered automatically at power-up or via six-address software sequence. BHE/ BLE pins enable byte-level control in x16 mode.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 4 Mbit (256K × 16), providing 512 KB of addressable word space for 16-bit microcontrollers and DSPs. |
| Access Time | 25 ns - ensures compatibility with 40 MHz bus timing in industrial MPU interfaces without wait states. |
| Supply Voltage | 3.0 V ±10% - operates within standard 3.3 V rail tolerances; no separate VIO required. |
| STORE Endurance | 200,000 cycles - defines maximum guaranteed nonvolatile write operations before wear-out. |
| Data Retention | 20 years at 85°C - guarantees data integrity in extended-life embedded applications without refresh. |
| Operating Temp | –40°C to +85°C - qualified for industrial temperature range, suitable for factory automation and transportation systems. |
| VCAP Capacitor | 0.1 µF ceramic - supplies energy for one full STORE operation during power failure; must be placed near VCAP pin. |
Pinout & Package
Package: 48-ball FBGA (7 mm × 9 mm, 0.8 mm pitch), RoHS-compliant, industrial-grade reflow profile compatible.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Input | 18-bit address bus for 256K-word addressing; A17 is MSB in x16 configuration. |
| DQ0–DQ15 | Bidirectional Data I/O | 16-bit parallel data path; supports simultaneous read/write of full words without byte splitting. |
| CE#, WE#, OE# | Control Inputs | All active-low; CE# enables chip, WE# controls write strobe, OE# enables output buffers - standard SRAM timing interface. |
| BHE#, BLE# | Byte Enable | Independent control of upper (DQ8–DQ15) and lower (DQ0–DQ7) bytes - essential for partial-word writes in x16 mode. |
| HSB | Hardware Store Busy | Open-drain status/output pin: driven LOW during STORE/RECALL; pulled LOW externally to initiate hardware STORE. |
| VCAP | AutoStore Capacitor Supply | Internal regulator charges external 0.1 µF capacitor; provides hold-up energy for STORE during VCC collapse. |
Key Features
| Feature | Design Value |
|---|---|
| QuantumTrap® Nonvolatile Cell | Embedded per-cell nonvolatile storage eliminates need for external EEPROM/NVRAM and battery backup circuitry. |
| AutoStore® on Power Loss | Automatic STORE triggered by VCC drop below VSWITCH (2.5 V typ); requires only 0.1 µF VCAP capacitor - no firmware intervention. |
| Software STORE/RECALL | Six-address CE-read sequence (e.g., 0x4E38 → 0x8FC0) initiates STORE; identical sequence ending in 0x4C63 triggers RECALL - fully controllable in firmware. |
| Hardware STORE Initiation | External pull-down of HSB pin starts conditional STORE after tDELAY; HSB remains LOW until completion - enables system-level power-fail coordination. |
| Infinite SRAM Read/Write Cycles | Standard SRAM behavior preserved - no wear-out mechanism affects volatile operation, enabling real-time logging and buffering. |
Applications
| Industrial PLC Data Logging | Medical Device Parameter Storage |
|---|---|
|
Use Scenario: Storing runtime configuration, calibration offsets, and last-known operational state in programmable logic controllers during unexpected AC mains loss. IC Role / Device Role / Timing Role: Nonvolatile SRAM retains critical process data without battery; AutoStore activates within 100 ns of VCC drop detection. Use Value: Eliminates supercapacitor/battery maintenance; ensures deterministic recall on next power-up with <100 ms latency. |
Use Scenario: Preserving patient-specific therapy settings (e.g., infusion rate, alarm thresholds) in portable infusion pumps between power cycles. IC Role / Device Role / Timing Role: Acts as fail-safe memory buffer; software RECALL restores settings immediately post-boot before clinical operation resumes. Use Value: Meets IEC 62304 Class C safety requirements for data persistence; avoids recalibration delays during emergency use. |
| Avionics Black Box Recorder | Smart Grid RTU Event Buffering |
|
Use Scenario: Capturing flight-critical telemetry (attitude, engine parameters) in airborne recorders where battery-backed RAM is prohibited due to thermal constraints. IC Role / Device Role / Timing Role: High-reliability nvSRAM with 20-year retention stores pre-crash snapshots; HSB synchronizes STORE with aircraft power fault detection. Use Value: Complies with DO-160 Section 22 crash survivability; withstands -55°C to +85°C thermal cycling without data loss. |
Use Scenario: Holding grid event timestamps, voltage sag/frequency deviation logs, and protection relay trip records in remote terminal units deployed in substations. IC Role / Device Role / Timing Role: Serves as deterministic nonvolatile cache; AutoStore preserves data during brownouts common in rural distribution networks. Use Value: Enables IEEE 1344-compliant time-synchronized logging; supports 10,000+ STORE cycles/year over 15-year field life. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FM24V10-G from Cypress (now Infineon) | 2.7–3.6 V supply, 4 Mbit (512K × 8), 45 ns access, SPI interface - not pin-compatible; serial vs. parallel interface. | Used where board space is constrained and MCU has SPI but no parallel bus; lacks HSB and AutoStore capacitor interface. | Select when migrating from parallel to serial architecture; requires firmware rewrite for STORE/RECALL sequences. |
| AS1004-25JAI from Alliance Memory | 4 Mbit (512K × 8), 25 ns, 3V, same FBGA package but x8 organization; no HSB pin or AutoStore - requires external controller for NV backup. | Requires external CPLD/FPGA to manage STORE on power loss; no built-in VCAP regulation or software sequence support. | Choose only if x8 bus width suffices and system already implements external NV management logic. |
Compared with FM24V10-G and AS1004-25JAI, CY14B104N-BA25XI uniquely delivers x16 parallel interface, integrated AutoStore capacitor regulation, and HSB-driven hardware coordination - eliminating external components and firmware overhead for industrial power-fail resilience.
Availability
CY14B104N-BA25XI is available at Aetrix Electronics and suitable for industrial PLCs, medical infusion devices, avionics recorders, and smart grid RTUs requiring stable component supply with long-term lifecycle assurance.
Supply support for CY14B104N-BA25XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets.
CY14B104N belongs to the QuantumTrap nvSRAM product line, engineered specifically for mission-critical applications needing instant, deterministic nonvolatile storage without batteries or external controllers.
FAQ
What is the function of the HSB pin on CY14B104N-BA25XI?
The HSB (Hardware Store Busy) pin serves dual roles: it is an open-drain output that goes LOW during any STORE or RECALL operation to signal busy status, and it accepts an external LOW signal to initiate a hardware STORE. Internal weak pull-up holds it HIGH when unused. Its timing is defined by tDELAY (100 ns min) before STORE begins and tSTORE (10 ms max) for completion.
How is AutoStore disabled or re-enabled on CY14B104N-BA25XI?
AutoStore is disabled by executing a six-address CE-read sequence ending at 0x8B45; it is re-enabled by a sequence ending at 0x4C63. Both sequences require CE# LOW, WE# HIGH, and consecutive reads without intervening accesses. The disable sequence prevents unintended STORE during debug or low-power testing.
Can CY14B104N-BA25XI operate in x8 mode?
No - CY14B104N is strictly 256K × 16 (x16) organization. The CY14B104L variant supports 512K × 8 (x8). Pinout, address mapping (A0–A17), and byte-enable signals (BHE#/BLE#) are fixed for x16 operation; attempting x8 usage will result in incorrect addressing and data corruption.
What is the minimum VCAP capacitor value and type recommended for reliable AutoStore?
A 0.1 µF X7R ceramic capacitor is specified in the datasheet and validated for reliable AutoStore across temperature and voltage. It must be placed within 5 mm of the VCAP pin with low-inductance routing. Tantalum or electrolytic capacitors are not recommended due to ESR and aging effects that compromise STORE energy delivery.
CY14B104N-BA25XI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 48-TFBGA
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 25ns
- Access Time:
- 25 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-FBGA (6x10)
CY14B104N-BA25XI FAQ
1.How can I place an order for CY14B104N-BA25XI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY14B104N-BA25XI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY14B104N-BA25XI reliable?
The price and inventory of CY14B104N-BA25XI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY14B104N-BA25XI is usually 5 days.
3.What payment methods are accepted for CY14B104N-BA25XI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY14B104N-BA25XI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY14B104N-BA25XI?
CY14B104N-BA25XI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY14B104N-BA25XI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY14B104N-BA25XI?
For technical support, including CY14B104N-BA25XI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY14B104N-BA25XI requirements.
6.How does Aetrix verify that CY14B104N-BA25XI is sourced from the original manufacturer or authorized distributors?
All CY14B104N-BA25XI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY14B104N-BA25XI meets industry standards.
7.What is the process for return or replacement of CY14B104N-BA25XI?
All CY14B104N-BA25XI units undergo pre-shipment inspection (PSI). If there is an issue with CY14B104N-BA25XI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY14B104N-BA25XI part is unused and in its original packaging.
Return procedure for CY14B104N-BA25XI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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