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Infineon Technologies CY14B104N-BA25XIT
- Part No.:
- CY14B104N-BA25XIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
CY14B104N-BA25XIT.pdf
- Description:
- IC NVSRAM 4MBIT PARALLEL 48FBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,185
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Product details
Overview
CY14B104N-BA25XIT from Cypress Semiconductor is a 4 Mbit nonvolatile SRAM (nvSRAM) with 256K × 16 organization, QuantumTrap® nonvolatile storage, 25 ns access time, and single 3V (+20% to –10%) supply operation. It performs automatic STORE on power loss using VCAP capacitor support and supports software/hardware-initiated STORE/RECALL cycles. Used in industrial PLCs for real-time data logging during unexpected power failure.
For engineers reviewing the CY14B104N-BA25XIT datasheet, CY14B104N-BA25XIT pinout, CY14B104N-BA25XIT application, or CY14B104N-BA25XIT equivalent, key selection criteria include x16 bus interface compatibility, HSB-driven hardware store timing, VCAP capacitance requirement (0.1 µF), and 200,000 STORE cycle endurance - all critical for deterministic fail-safe memory retention in embedded control systems.
Technical Context
This nvSRAM integrates parallel SRAM and QuantumTrap nonvolatile cells per bit, enabling simultaneous STORE/RECALL across all 256K words without block erasure. The architecture decouples volatile read/write (infinite cycles) from nonvolatile STORE (200K cycles) and RECALL (infinite cycles), with tSTORE = 15 ms and tRECALL = 12 ms typical.
AutoStore triggers when VCC drops below VSWITCH (2.7 V min), using charge stored on VCAP to complete one full STORE. HSB serves dual role: open-drain status indicator (LOW during STORE/RECALL) and hardware trigger input (pulled LOW to initiate STORE), with tDELAY = 100 ns before operation start.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4 Mbit organized as 256K × 16 - directly interfaces 16-bit microprocessor data buses without glue logic. |
| Access Time | 25 ns - enables direct connection to high-speed controllers (e.g., ARM9, SH-4) operating at ≤40 MHz bus clocks. |
| Nonvolatile Endurance | 200,000 STORE cycles - defines maximum safe power-loss events before QuantumTrap wear-out; RECALL is unlimited. |
| Data Retention | 20 years at +85°C - guarantees long-term data integrity in industrial environments without battery backup. |
| Supply Voltage | 3.0 V ±10% (2.7–3.6 V) - compatible with standard 3.3 V LDOs; no separate VIO rail required. |
| VCAP Capacitor | 0.1 µF ceramic - provides sufficient energy for one full STORE operation during VCC dropout; placed adjacent to VCAP pin. |
| Operating Temperature | –40°C to +85°C - qualified for extended industrial temperature range, supporting deployment in motor drives and factory automation. |
Pinout & Package
Package: 48-ball FBGA (6 mm × 8 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Input | 18-bit address bus for 256K-word addressing; A17 is MSB, no A18 used in x16 mode. |
| DQ0–DQ15 | Input/Output | 16-bit bidirectional data bus; supports byte-level writes via BHE/BLE control. |
| CE, WE, OE | Input | Active-low chip enable, write enable, output enable - standard SRAM control timing with tAA = 25 ns. |
| BHE, BLE | Input | Byte enable controls for upper/lower 8 bits; required for partial-word writes in x16 configuration. |
| HSB | Input/Output | Open-drain hardware store busy signal - driven LOW during STORE/RECALL; pulled LOW externally to trigger hardware STORE. |
| VCAP | Power Supply | Capacitor connection point for AutoStore energy storage; internally regulated to ~2.5 V during power loss. |
| VCC, VSS | Power | Single 3V supply and ground - no VIO or auxiliary rails; VSS pins must be low-inductance connected to system ground plane. |
Key Features
| Feature | Design Value |
|---|---|
| QuantumTrap® Nonvolatile Cell | Embedded per-bit nonvolatile element enabling true infinite SRAM reads/writes while retaining 20-year data retention without batteries or external EEPROM. |
| Hardware Store Busy (HSB) | Dual-function pin providing real-time STORE/RECALL status indication and hardware-triggered initiation - eliminates need for polling or software overhead. |
| AutoStore® on Power Loss | Automatic STORE triggered by VCC drop below 2.7 V, using charge from 0.1 µF VCAP capacitor - ensures zero-data-loss during brownout or sudden shutdown. |
| Software STORE/RECALL Sequences | Six-address read sequences (e.g., 0x4E38 → 0xB1C7 → … → 0x8FC0) enable deterministic, firmware-controlled nonvolatile operations without external signals. |
| x16 Bus Interface Support | Native 256K × 16 organization with BHE/BLE enables direct integration with 16-bit microcontrollers and DSPs - avoids address/data multiplexing or bus-width conversion. |
Applications
| Industrial PLC Data Logging | Medical Device Parameter Storage |
|---|---|
|
Use Scenario: Storing real-time I/O states and alarm history in programmable logic controllers during mains power interruption. IC Role / Device Role / Timing Role: Nonvolatile SRAM acting as last-state buffer; stores up to 256K words of operational data within 15 ms before VCC collapse. Use Value: Eliminates supercapacitor/battery backup subsystems while guaranteeing deterministic STORE completion under 2.7 V brownout conditions. |
Use Scenario: Preserving calibration coefficients, patient settings, and fault logs in portable ultrasound and infusion pumps. IC Role / Device Role / Timing Role: Fail-safe memory holding critical configuration data; RECALL restores full functionality within 12 ms at power-up. Use Value: Meets IEC 62304 Class C software safety requirements by ensuring zero data corruption during uncontrolled power cycling. |
| Automotive Body Control Module | Telecom Line Card Configuration |
|
Use Scenario: Retaining door lock status, mirror position, and lighting presets across vehicle ignition cycles and battery disconnects. IC Role / Device Role / Timing Role: Automotive-grade nvSRAM interfacing with 16-bit CAN microcontroller; operates across –40°C to +85°C. Use Value: Provides AEC-Q100 stress-tested, solder-reflow-compatible memory with 20-year data retention - no field recalls due to EEPROM wear-out. |
Use Scenario: Storing port mapping, VLAN tables, and QoS policies in carrier-grade Ethernet switches during firmware updates or thermal shutdown. IC Role / Device Role / Timing Role: High-reliability configuration memory accessed via parallel bus; supports hot-swap-aware STORE/RECALL sequencing. Use Value: Enables zero-downtime configuration persistence without requiring external FRAM or serial flash with slower write latency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FM24V04-G | F-RAM-based 4 Mbit (512K × 8); 15 ns access; no STORE delay; unlimited endurance; requires 2.7–3.6 V. | Supports true random write without STORE latency; lacks x16 bus interface and HSB signaling - needs external logic for 16-bit alignment. | Select when deterministic sub-microsecond writes and >1014 write cycles are required, and x16 interface is not mandatory. |
| MB85RS4MT | FeRAM-based 4 Mbit (512K × 8); 25 ns access; 1015 endurance; SPI interface only; no parallel bus support. | Serial interface reduces PCB routing complexity but adds CPU overhead for burst transfers; incompatible with existing SRAM bus designs. | Select for space-constrained designs where SPI integration simplifies layout, and bandwidth demands are ≤10 MB/s. |
Compared with FM24V04-G and MB85RS4MT, CY14B104N-BA25XIT uniquely delivers native x16 parallel interface, hardware-managed STORE/RECALL via HSB, and guaranteed 20-year retention - making it optimal for legacy SRAM bus upgrades requiring zero firmware changes and deterministic power-loss response.
Availability
CY14B104N-BA25XIT is available at Aetrix Electronics and suitable for industrial PLCs, medical device parameter storage, and automotive body control modules requiring stable component supply, long-lifecycle assurance, and RoHS-compliant packaging.
Supply support for CY14B104N-BA25XIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets, with focus on mixed-signal integration and nonvolatile innovation.
CY14B104N belongs to the QuantumTrap nvSRAM product line, engineered specifically for applications demanding battery-free, deterministic nonvolatile storage with SRAM speed and interface compatibility.
FAQ
What is the minimum VCAP capacitance required for reliable AutoStore operation?
The CY14B104N-BA25XIT requires a 0.1 µF X7R ceramic capacitor on the VCAP pin, placed within 5 mm of the package. This value ensures sufficient energy for one full STORE operation during VCC dropout down to 2.7 V. Larger capacitors do not extend STORE capability but improve margin against rapid voltage decay.
Can HSB be left unconnected if hardware STORE is not used?
Yes - HSB has an internal weak pull-up and may be left floating if unused. When disconnected, the pin remains HIGH during normal operation and does not affect SRAM functionality. It only becomes active (driven LOW) during STORE/RECALL or when externally pulled LOW to initiate hardware STORE.
How does the software STORE sequence prevent accidental activation?
The six-address sequence (0x4E38 → 0xB1C7 → 0x83E0 → 0x7C1F → 0x703F → 0x8FC0) must be executed as consecutive CE-controlled reads with WE held HIGH. Any intervening write, address violation, or timing violation (e.g., tSS < 100 ns between reads) aborts the sequence - ensuring STORE is never triggered by noise or spurious accesses.
Is the CY14B104N-BA25XIT pin-compatible with other Cypress nvSRAMs?
No - CY14B104N-BA25XIT uses a 48-ball FBGA package with x16-specific pinout (including BHE/BLE and A17). It is not pin-compatible with CY14B104L (x8), CY14B108N (8 Mbit), or legacy CY14B101 (1 Mbit), which differ in ball count, address width, and byte-enable signal placement.
CY14B104N-BA25XIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 48-TFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 25ns
- Access Time:
- 25 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-FBGA (6x10)
CY14B104N-BA25XIT FAQ
1.How can I place an order for CY14B104N-BA25XIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY14B104N-BA25XIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY14B104N-BA25XIT reliable?
The price and inventory of CY14B104N-BA25XIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY14B104N-BA25XIT is usually 5 days.
3.What payment methods are accepted for CY14B104N-BA25XIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY14B104N-BA25XIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY14B104N-BA25XIT?
CY14B104N-BA25XIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY14B104N-BA25XIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY14B104N-BA25XIT?
For technical support, including CY14B104N-BA25XIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY14B104N-BA25XIT requirements.
6.How does Aetrix verify that CY14B104N-BA25XIT is sourced from the original manufacturer or authorized distributors?
All CY14B104N-BA25XIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY14B104N-BA25XIT meets industry standards.
7.What is the process for return or replacement of CY14B104N-BA25XIT?
All CY14B104N-BA25XIT units undergo pre-shipment inspection (PSI). If there is an issue with CY14B104N-BA25XIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY14B104N-BA25XIT part is unused and in its original packaging.
Return procedure for CY14B104N-BA25XIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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