Infineon Technologies CY14B104N-BA45XC

Overview

CY14B104N-BA45XC from Cypress Semiconductor is a 4 Mbit nonvolatile SRAM (nvSRAM) with 256K × 16 organization, 45 ns access time, single 3V (+20% to –10%) supply, and QuantumTrap® nonvolatile storage. It performs automatic STORE on power loss using VCAP capacitor support and supports software/hardware-initiated STORE/RECALL. Used in industrial control systems requiring persistent memory without battery backup.

For engineers reviewing the CY14B104N-BA45XC datasheet, CY14B104N-BA45XC pinout, CY14B104N-BA45XC application, or CY14B104N-BA45XC equivalent, key selection criteria include x16 bus interface compatibility, AutoStore timing (tSTORE = 15 ms max), HSB pin behavior for hardware store coordination, and VCAP capacitor sizing (0.1 µF typical).

Technical Context

The CY14B104N implements a dual-cell architecture: standard SRAM for high-speed read/write and integrated QuantumTrap nonvolatile elements per cell. STORE transfers data from SRAM to nonvolatile storage; RECALL restores it on power-up or via software. Both operations inhibit concurrent SRAM access.

It supports three STORE initiation methods: AutoStore (triggered by VCC drop below VSWITCH ≈ 2.7 V), Hardware STORE (via active-low HSB assertion), and Software STORE (six-address CE-controlled read sequence). RECALL is similarly available via power-up or six-address software sequence, with tRECALL ≤ 15 ms.

Key Specifications

Pinout & Package

Package: 48-ball FBGA (6 mm × 8 mm, 0.8 mm pitch), RoHS-compliant, lead-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nvSRAM applications.

Compared with STK14C88-3A55I and FM24V04-G, CY14B104N-BA45XC uniquely delivers parallel x16 interface, deterministic HSB-driven STORE timing, and seamless SRAM-equivalent access - making it optimal for real-time systems needing both speed and guaranteed nonvolatile commit without protocol translation.

Availability

CY14B104N-BA45XC is available at Aetrix Electronics and suitable for industrial PLCs, medical infusion pumps, telecom base stations, and automotive ADAS modules requiring stable component supply with long-term lifecycle assurance.

Supply support for CY14B104N-BA45XC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets.

CY14B104N belongs to the QuantumTrap nvSRAM product line, engineered specifically to replace battery-backed SRAM and external EEPROM in mission-critical systems demanding instant-on nonvolatility and SRAM speed.

FAQ

What is the minimum VCAP capacitance required for reliable AutoStore operation?

The CY14B104N-BA45XC requires a minimum 0.1 µF X7R ceramic capacitor on the VCAP pin, placed within 5 mm of the package. This value ensures sufficient charge to complete one full STORE cycle (≤15 ms) when VCC drops below VSWITCH (2.7 V). Larger capacitors extend hold-up time but do not improve reliability beyond specification.

Can the HSB pin be left unconnected if hardware STORE is not used?

Yes - the HSB pin has an internal weak pull-up and may be left floating if hardware STORE initiation and busy indication are unused. However, it must not be tied LOW or driven actively without intent to trigger STORE, as doing so will force immediate nonvolatile write after tDELAY (100 ns), potentially causing unintended data commits.

How does the CY14B104N handle simultaneous SRAM access during AutoStore?

During AutoStore (or any STORE), the CY14B104N inhibits all SRAM read/write operations. The HSB pin goes LOW to signal busy state, and the device remains unresponsive to CE#/WE#/OE# until STORE completes (~15 ms). No data corruption occurs - pending accesses are blocked, not executed.

Is the software STORE sequence compatible with all microprocessor bus timing configurations?

The six-address software STORE sequence requires CE#-controlled reads with stable address setup and hold times ≥5 ns. It is compatible with most 8080-style and generic parallel buses but incompatible with burst-mode or multiplexed address/data buses unless external glue logic ensures strict sequential CE# strobing without intervening writes or address glitches.