Infineon Technologies CY14B104N-BA45XIT

Overview

CY14B104N-BA45XIT from Cypress Semiconductor is a 4 Mbit nonvolatile SRAM (nvSRAM) with 256K × 16 organization, 45 ns access time, single 3V (+20% to –10%) supply, and QuantumTrap® nonvolatile storage. It performs automatic STORE on power loss using VCAP capacitor, supports software/hardware-initiated STORE/RECALL, and delivers 20-year data retention with 200,000 STORE cycles. Used in industrial control modules requiring persistent memory without battery backup.

For engineers reviewing the CY14B104N-BA45XIT datasheet, CY14B104N-BA45XIT pinout, CY14B104N-BA45XIT application, or CY14B104N-BA45XIT equivalent, key selection criteria include x16 bus interface support, HSB-driven hardware store timing, VCAP-based AutoStore compliance, and TSOP II package compatibility for legacy board layouts.

Technical Context

This nvSRAM integrates parallel SRAM and QuantumTrap nonvolatile cells per bit, enabling true byte/word-level persistence without external controllers. STORE and RECALL operations execute in parallel across all cells, with SRAM access inhibited only during those cycles.

The device supports three STORE initiation methods: AutoStore (triggered by VCC drop below VSWITCH), hardware STORE (via active-low HSB assertion), and software STORE (six-address CE-read sequence). RECALL occurs automatically at power-up or via identical six-address sequence ending in 0x4C63.

Key Specifications

Pinout & Package

Package: 44-pin TSOP II (Type II), 400 mil width, RoHS-compliant, lead-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Compared with AS4C4M16SA-6TCN and FM24CL04-G, CY14B104N-BA45XIT uniquely combines x16 parallel interface, 45 ns SRAM speed, integrated QuantumTrap storage, and hardware-managed STORE/RECALL-making it irreplaceable for industrial systems demanding deterministic, high-density, battery-free nonvolatility.

Availability

CY14B104N-BA45XIT is available at Aetrix Electronics and suitable for industrial motor control, factory automation HMI, and programmable logic controller designs requiring stable component supply, long-lifecycle support, and RoHS-compliant TSOP II packaging.

Supply support for CY14B104N-BA45XIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-reliability memory, microcontrollers, and analog solutions for industrial and automotive markets.

CY14B104N belongs to Cypress's nvSRAM product line, engineered specifically for mission-critical industrial systems needing instantaneous, wear-free, batteryless data persistence during power interruption.

FAQ

What is the minimum VCAP capacitance required for reliable AutoStore operation?

The CY14B104N-BA45XIT requires a 0.1 µF ceramic capacitor between VCAP and VSS, rated for ≥10 V, placed within 5 mm of the pin. This value ensures sufficient charge to complete one full STORE cycle when VCC drops below VSWITCH (typically 2.7 V), as verified in DC Electrical Characteristics Table on page 7 of the official datasheet.

Can HSB be left unconnected if hardware STORE is not used?

Yes-HSB has an internal weak pull-up and may be left floating if unused. The pin defaults HIGH and does not affect SRAM operation. However, leaving it unconnected forfeits real-time STORE progress monitoring and hardware-initiated STORE capability, both essential in safety-critical shutdown sequences.

Does software STORE require OE# to be asserted during the six-address sequence?

No-OE# may be HIGH or LOW during the software STORE sequence. The datasheet explicitly states validity depends only on CE#-controlled reads; OE# state affects only output driver enablement and is irrelevant to sequence recognition. DQ lines remain high-Z if OE# is HIGH, which is acceptable.

How does the device prevent unintended STORE during power-up sequencing?

The CY14B104N-BA45XIT ignores AutoStore and hardware STORE unless at least one SRAM write has occurred since the last STORE or RECALL. This write-gating mechanism prevents spurious stores during initialization, and the internal RECALL cycle completes before the device accepts new commands-ensuring clean state restoration.