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Infineon Technologies CY14B104N-ZS20XC

Part No.:
CY14B104N-ZS20XC
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
44-TSOP (0.400", 10.16mm Width)
Datasheet:
AetrixCY14B104N-ZS20XC.pdf
Description:
IC NVSRAM 4MBIT PAR 44TSOP II
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,872

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Product details

Overview

CY14B104N-ZS20XC from Cypress Semiconductor is a 4 Mbit nonvolatile SRAM (nvSRAM) with 256K × 16 organization, 20 ns access time, single 3V (+20% to –10%) supply, and QuantumTrap® nonvolatile storage. It performs automatic STORE on power loss using VCAP capacitor support and supports software- or hardware-initiated STORE/RECALL. Used in industrial control systems requiring persistent memory without battery backup.

For engineers reviewing the CY14B104N-ZS20XC datasheet, CY14B104N-ZS20XC pinout, CY14B104N-ZS20XC application, or CY14B104N-ZS20XC equivalent, key selection criteria include x16 bus interface compatibility, HSB-driven hardware store timing, VCAP capacitance requirements, and 200,000 STORE cycle endurance under industrial temperature operation.

Technical Context

The CY14B104N-ZS20XC integrates standard SRAM cells with parallel QuantumTrap nonvolatile elements per cell, enabling true nonvolatility without external batteries. Its dual-mode operation-SRAM read/write interleaved with STORE/RECALL-is governed by CE/OE/WE/BHE/BLE control logic and validated address sequences.

STORE operations are conditionally triggered: AutoStore activates when VCC drops below VSWITCH and VCAP sustains internal charge; Hardware STORE initiates on HSB pin assertion only after at least one prior write; Software STORE requires six exact CE-controlled reads to dedicated addresses. RECALL occurs automatically at power-up or via software sequence, restoring full 256K×16 data in tHRECALL ≤ 20 ms.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Size4 Mbit organized as 256K × 16 - supports 16-bit microprocessor data bus without byte splitting.
Access Time20 ns - enables direct interfacing with high-speed controllers such as ARM9 or SH-4 without wait states.
Supply Voltage3.0 V ±10% - compatible with standard 3.3V system rails using simple LDO regulation.
STORE Endurance200,000 cycles - defines maximum field-replaceable lifetime for frequent power-cycle environments.
Data Retention20 years at +85°C - guarantees long-term data integrity in unpowered industrial deployments.
Operating Temp–40°C to +85°C - qualified for extended-temperature industrial automation and transportation electronics.
VCAP Requirement0.1 µF ceramic capacitor - provides sufficient energy for single STORE during VCC dropout ≥ 10 µs.

Pinout & Package

Package: 48-ball FBGA (10 mm × 10 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3.

Pin/TerminalCircuit RoleDesign Meaning
A0–A17Address InputsSelects one of 262,144 16-bit words; A17 required for full addressing in x16 mode.
DQ0–DQ15Bidirectional Data I/O16-bit parallel data path; BHE/BLE control upper/lower byte enable during partial writes.
CE, WE, OEActive-Low Control InputsStandard SRAM timing interface: CE selects chip, WE enables write, OE enables output drivers.
BHE, BLEByte Enable InputsEnable DQ8–DQ15 (BHE) or DQ0–DQ7 (BLE); essential for 8-bit sub-word writes in x16 configuration.
HSBHardware Store BusyOpen-drain status/output: driven LOW during STORE; pulled LOW externally to trigger hardware STORE.
VCAPAutoStore Capacitor SupplyInternal regulator charges external 0.1 µF cap; supplies energy for STORE when VCC fails.
VCC, VSSPower/GroundSingle 3V supply domain; decoupling required within 5 mm of VCC/VSS pair per JEDEC guidelines.

Key Features

FeatureDesign Value
QuantumTrap® Nonvolatile StorageEmbedded per-cell nonvolatile element enables infinite SRAM reads/writes while retaining 20-year data persistence without external power.
Three-Mode STORE InitiationSupports AutoStore (power-loss), Hardware STORE (HSB pin), and Software STORE (6-address sequence) - allows flexible fail-safe policy implementation.
Conditional STORE ExecutionHardware and AutoStore operations require at least one prior SRAM write since last STORE/RECALL - prevents unnecessary wear on nonvolatile elements.
Software-Controlled RECALL6-address read sequence (0x4E38 → 0x4C63) triggers immediate restore from nonvolatile memory - enables deterministic warm restart without waiting for power-up timing.
Industrial Temperature Range–40°C to +85°C operation with full 20 ns timing spec maintained - suitable for DIN-rail PLCs and railway signaling modules.

Applications

Industrial PLC Data LoggingMedical Device Parameter Storage

Use Scenario: Storing real-time sensor history and configuration settings in programmable logic controllers during mains power interruption.

IC Role / Device Role / Timing Role: Nonvolatile SRAM providing atomic STORE/RECALL at power boundary transitions with <20 ms recall latency.

Use Value: Eliminates supercapacitor or battery backup circuitry while guaranteeing zero-data-loss across 200,000+ power cycles.

Use Scenario: Preserving calibration coefficients and patient therapy parameters in portable infusion pumps between battery swaps.

IC Role / Device Role / Timing Role: x16 nvSRAM serving as primary configuration memory with software-triggered RECALL on boot.

Use Value: Enables FDA-compliant deterministic startup behavior and meets IEC 62304 data retention requirements for Class C devices.

Avionics Flight Recorder BufferRailway Signaling Controller State Backup

Use Scenario: Capturing critical flight telemetry in FDR systems where power may be lost abruptly during emergency events.

IC Role / Device Role / Timing Role: High-reliability nvSRAM with AutoStore activated by VCC collapse, independent of host processor intervention.

Use Value: Meets DO-160 Section 22 crash-survivable power interruption requirements with no firmware dependency.

Use Scenario: Maintaining interlocking logic state and signal aspect history in EBI (European Balise Interface) controllers during track-side power brownouts.

IC Role / Device Role / Timing Role: Industrial-grade nvSRAM with –40°C to +85°C operation and HSB-monitored STORE progress reporting.

Use Value: Ensures EN 50126/50128 SIL-3 compliance by eliminating volatile RAM-only state storage points.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
AS4C4M16SA-6TCN4 Mbit PSRAM with self-refresh DRAM core and serial command interface; no built-in nonvolatility - requires external EEPROM + controller for persistence.Lacks integrated STORE/RECALL; needs firmware-managed save/restore and external power-fail detection circuitry.Choose only if system already implements robust power-fail interrupt handling and can tolerate 100+ µs save latency.
FM24V10-G1 Mbit F-RAM with 3.3V operation, 55 ns access, unlimited endurance, but smaller density and no AutoStore capacitor interface.No VCAP-based autonomous STORE; relies on host-driven store commands with no power-loss autonomy.Prefer for low-density, ultra-high-endurance logging where deterministic 150 ns writes outweigh need for automatic power-loss capture.

Compared with AS4C4M16SA-6TCN and FM24V10-G, the CY14B104N-ZS20XC uniquely delivers autonomous, capacitor-backed STORE on power failure with full 4 Mbit x16 interface and industrial temperature support - eliminating external supervision circuitry and firmware complexity.

Availability

CY14B104N-ZS20XC is available at Aetrix Electronics and suitable for industrial PLCs, medical infusion pumps, avionics black boxes, and railway signaling controllers requiring stable component supply with guaranteed long-term availability.

Supply support for CY14B104N-ZS20XC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets.

The CY14B series targets mission-critical applications needing battery-free nonvolatility, combining SRAM speed with quantum-mechanical charge trapping - optimized for systems where data loss during power interruption is unacceptable.

FAQ

What is the minimum VCAP capacitance required for reliable AutoStore operation?

The CY14B104N-ZS20XC requires a 0.1 µF X7R ceramic capacitor on the VCAP pin, placed within 3 mm of the device. This value ensures sufficient stored energy to complete one full STORE cycle during VCC dropout events lasting up to 10 µs, as verified in Cypress's DC Electrical Characteristics table (Rev. *L, p.7).

Can the HSB pin be left unconnected if hardware STORE is not used?

Yes - the HSB pin has an internal weak pull-up and may be left floating if hardware STORE initiation and busy monitoring are not required. However, it must never be tied HIGH externally, as that would prevent AutoStore or software STORE from asserting HSB LOW during operation.

Does the CY14B104N-ZS20XC support byte-write masking in x16 mode?

Yes - BHE and BLE pins enable independent control of upper (DQ8–DQ15) and lower (DQ0–DQ7) bytes during writes. When BHE=LOW and BLE=HIGH, only DQ0–DQ7 are written; both LOW enables full 16-bit write. This matches standard x16 SRAM byte-enable behavior.

How does the conditional STORE feature improve device longevity?

The CY14B104N-ZS20XC skips AutoStore and Hardware STORE unless at least one SRAM write occurred since the last STORE or RECALL. This prevents unnecessary nonvolatile element cycling during idle periods, extending usable life toward the rated 200,000 STORE cycles even in systems with frequent power cycling but infrequent data changes.

CY14B104N-ZS20XC Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
44-TSOP (0.400", 10.16mm Width)
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
NVSRAM
Technology:
NVSRAM (Non-Volatile SRAM)
Memory Size:
4Mbit
Memory Organization:
256K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
20ns
Access Time:
20 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
44-TSOP II

CY14B104N-ZS20XC FAQ

1.How can I place an order for CY14B104N-ZS20XC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY14B104N-ZS20XC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY14B104N-ZS20XC reliable?

The price and inventory of CY14B104N-ZS20XC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY14B104N-ZS20XC is usually 5 days.

3.What payment methods are accepted for CY14B104N-ZS20XC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY14B104N-ZS20XC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY14B104N-ZS20XC?

CY14B104N-ZS20XC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY14B104N-ZS20XC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY14B104N-ZS20XC?

For technical support, including CY14B104N-ZS20XC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY14B104N-ZS20XC requirements.

6.How does Aetrix verify that CY14B104N-ZS20XC is sourced from the original manufacturer or authorized distributors?

All CY14B104N-ZS20XC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY14B104N-ZS20XC meets industry standards.

7.What is the process for return or replacement of CY14B104N-ZS20XC?

All CY14B104N-ZS20XC units undergo pre-shipment inspection (PSI). If there is an issue with CY14B104N-ZS20XC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY14B104N-ZS20XC part is unused and in its original packaging.

Return procedure for CY14B104N-ZS20XC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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