Infineon Technologies CY14B104N-ZS25XC

Overview

CY14B104N-ZS25XC from Cypress Semiconductor is a 4 Mbit nonvolatile SRAM (nvSRAM) with 256K × 16 organization, 25 ns access time, single 3V (+20% to –10%) supply, and integrated QuantumTrap® nonvolatile storage. It performs automatic STORE on power loss using an external VCAP capacitor and supports software- or hardware-triggered STORE/RECALL. Used in industrial control modules requiring deterministic data retention after unexpected power failure.

For engineers reviewing the CY14B104N-ZS25XC datasheet, CY14B104N-ZS25XC pinout, CY14B104N-ZS25XC application, or CY14B104N-ZS25XC equivalent, key selection criteria include x16 bus interface support, HSB-driven hardware store timing, VCAP-based AutoStore reliability, and 200,000 STORE cycle endurance - all critical for fail-safe memory in programmable logic controllers and metering systems.

Technical Context

The CY14B104N-ZS25XC integrates parallel SRAM and QuantumTrap nonvolatile cells per bit, enabling simultaneous infinite SRAM read/write cycles and up to 200,000 STORE operations. Its architecture decouples volatile operation from nonvolatile transfer: STORE occurs only after at least one write since last RECALL, preventing spurious writes.

It supports three STORE initiation methods - AutoStore (triggered by VCC drop below VSWITCH), hardware STORE (via active-low HSB assertion), and software STORE (six-address CE-read sequence). RECALL is automatic on power-up or software-initiated, with tHRECALL ≤ 20 ms and tRECALL ≤ 15 ms respectively, ensuring rapid system recovery.

Key Specifications

Pinout & Package

Package: 48-ball FBGA (9 mm × 7 mm, 0.8 mm pitch), RoHS-compliant, suitable for high-density PCB layouts with thermal and signal integrity optimization.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nvSRAM applications.

Compared with AS4C4M16SA-25BCN and FM24V04-G, the CY14B104N-ZS25XC uniquely delivers parallel x16 interface, integrated AutoStore, and deterministic STORE/RECALL timing - making it the only solution that preserves legacy SRAM timing while guaranteeing data retention without architectural redesign.

Availability

CY14B104N-ZS25XC is available at Aetrix Electronics and suitable for industrial PLCs, smart electricity meters, railway signaling controllers, and medical infusion pumps requiring stable component supply with full lifecycle traceability and long-term obsolescence planning.

Supply support for CY14B104N-ZS25XC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets.

The CY14B series targets applications demanding SRAM speed with EEPROM-like nonvolatility - specifically engineered for fail-safe data logging where power interruption is frequent and unpredictable.

FAQ

What is the minimum VCAP capacitance required for reliable AutoStore operation?

The CY14B104N-ZS25XC requires a 0.1 µF ceramic capacitor between VCAP and VSS, rated for ≥10 V, placed within 5 mm of the package. This value ensures sufficient energy for one complete STORE cycle at VCC = 2.7 V and T = +85°C, as validated in the DC Electrical Characteristics table (page 7 of datasheet 001-07102).

Can HSB be left unconnected if hardware STORE is not used?

Yes - HSB has an internal weak pull-up and may be left floating if unused. However, if the host system monitors HSB for STORE status, it must be externally pulled up to VCC with ≤10 kΩ to ensure valid HIGH level detection during idle and proper open-drain drive during STORE.

Does software STORE require OE to be asserted during the six-address sequence?

No - the software STORE sequence relies solely on CE-controlled reads; OE may be HIGH or LOW. The datasheet explicitly states "it is not necessary that OE be LOW for a valid sequence," and BHE/BLE states are irrelevant during the address-only read sequence.

How does the CY14B104N-ZS25XC handle partial STORE failures due to insufficient VCAP charge?

The device detects VCAP voltage decay during STORE and aborts the operation if charge falls below threshold, leaving SRAM contents intact and asserting HSB HIGH. No partial or corrupted STORE occurs - the operation is atomic, and the SRAM remains fully functional for immediate re-attempt after VCC stabilization.