Infineon Technologies CY14B104N-ZS25XCT

Overview

CY14B104N-ZS25XCT from Cypress Semiconductor is a 4 Mbit nonvolatile SRAM (nvSRAM) with 256K × 16 organization, 25 ns access time, single 3V (+20% to –10%) supply, and QuantumTrap® nonvolatile storage. It performs automatic STORE on power loss using VCAP capacitor, supports software/hardware-initiated STORE/RECALL, and delivers 20-year data retention with 200,000 STORE cycles. Used in industrial control systems requiring persistent memory without battery backup.

For engineers reviewing the CY14B104N-ZS25XCT datasheet, CY14B104N-ZS25XCT pinout, CY14B104N-ZS25XCT application, or CY14B104N-ZS25XCT equivalent, key selection criteria include x16 bus interface timing, HSB-driven hardware store signaling, VCAP capacitor sizing, and compatibility with legacy SRAM controllers requiring byte enable (BHE/BLE) support.

Technical Context

The CY14B104N-ZS25XCT integrates standard SRAM cells with parallel QuantumTrap nonvolatile elements per cell, enabling true nonvolatility without external batteries. Its dual-mode operation-standard SRAM read/write plus conditional STORE/RECALL-requires precise coordination between CE/OE/WE control signals and address-based software sequences.

STORE operations are triggered by power-down (via VCAP), HSB pin assertion, or six-address software sequence; RECALL occurs automatically at power-up or via identical six-address sequence. The device inhibits SRAM access during STORE/RECALL and uses BHE/BLE for 16-bit byte selection-critical for MPU interfacing in deterministic real-time systems.

Key Specifications

Pinout & Package

Package: 48-ball FBGA (6 mm × 8 mm, 0.8 mm pitch), RoHS-compliant, industrial temperature range (–40°C to +85°C).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nvSRAM applications.

Compared with STK14C88-3L35I and FM24CL64-G, the CY14B104N-ZS25XCT uniquely combines x16 parallel interface, hardware store signaling via HSB, and deterministic 25 ns timing-making it the only option for MPU-based systems requiring battery-free, high-speed, byte-selectable nonvolatile memory.

Availability

CY14B104N-ZS25XCT is available at Aetrix Electronics and suitable for industrial control systems, medical diagnostics equipment, avionics data interfaces, and remote data loggers requiring stable component supply with guaranteed long-term availability.

Supply support for CY14B104N-ZS25XCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets.

The CY14B nvSRAM product line targets applications needing seamless SRAM performance with inherent nonvolatility-specifically replacing battery-backed SRAM in mission-critical embedded systems where maintenance access is impractical.

FAQ

What capacitor value is required for AutoStore operation?

A 0.1 µF X7R ceramic capacitor must be connected between VCAP and VSS. This value is specified in the DC Electrical Characteristics table (page 7 of datasheet 001-07102) and ensures sufficient charge to complete one full STORE cycle during VCC dropout. Larger values do not improve reliability and may delay power-up timing.

Can CY14B104N-ZS25XCT be used as a drop-in replacement for standard SRAM?

Yes, but only for read/write operations-the device behaves identically to a 256K × 16 SRAM when CE, WE, and OE are controlled normally. However, unused pins (BHE/BLE in x8 systems, HSB if unconnected) must be left floating or pulled per datasheet guidance; VCAP must be populated even if AutoStore is disabled.

How does the HSB pin function during STORE initiation and execution?

HSB is an open-drain output that remains HIGH when idle. When driven LOW externally, it initiates STORE after tDELAY (200 ns typical). During STORE, HSB is actively driven LOW; it returns HIGH only after completion. If HSB is unconnected, internal weak pull-up holds it HIGH-AutoStore remains active but hardware trigger is disabled.

What happens if a software STORE sequence is interrupted?

If any address in the six-step sequence (0x4E38 → 0xB1C7 → 0x83E0 → 0x7C1F → 0x703F → 0x8FC0) is skipped, misordered, or followed by another access before tSS (100 ns), the sequence aborts silently-no STORE occurs and SRAM remains fully operational. No error flag is asserted; firmware must implement timeout or retry logic.