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Infineon Technologies CY14B104N-ZS25XI
- Part No.:
- CY14B104N-ZS25XI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY14B104N-ZS25XI.pdf
- Description:
- IC NVSRAM 4MBIT PAR 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:1,163
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Product details
Overview
CY14B104N-ZS25XI from Cypress Semiconductor is a 4 Mbit nonvolatile SRAM (nvSRAM) organized as 256K × 16, featuring QuantumTrap® nonvolatile storage, 25 ns access time, single 3V (+20% to –10%) supply operation, and AutoStore® on power loss using an external VCAP capacitor. It serves as drop-in SRAM replacement in industrial control systems requiring persistent data retention without battery backup.
For engineers reviewing the CY14B104N-ZS25XI datasheet, CY14B104N-ZS25XI pinout, CY14B104N-ZS25XI application, or CY14B104N-ZS25XI equivalent, key selection criteria include x16 bus interface support, hardware STORE/RECALL via HSB pin, infinite SRAM read/write cycles, 200,000 nonvolatile STORE endurance, and 20-year data retention at industrial temperature range.
Technical Context
The CY14B104N integrates parallel SRAM and QuantumTrap nonvolatile cells per bit, enabling simultaneous STORE/RECALL across all memory locations. Its architecture supports three STORE initiation methods: automatic on VCC drop below VSWITCH, software address sequence (six CE-controlled reads), and hardware trigger via HSB pin assertion.
RECALL occurs automatically on power-up when VCC exceeds VSWITCH, or via software sequence; during both operations, SRAM access is inhibited for tHRECALL or tSTORE duration. Byte enable pins BHE/ BLE allow selective 8-bit writes in x16 mode, while HSB provides open-drain busy signaling and external store request capability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4 Mbit (256K × 16 organization) |
| Access Time | 25 ns - guarantees maximum SRAM read latency under full commercial/industrial voltage and temperature conditions |
| Nonvolatile Endurance | 200,000 STORE cycles - defines usable lifetime of QuantumTrap elements before wear-out |
| Data Retention | 20 years at TA = –40°C to +85°C - ensures long-term data integrity without refresh or power |
| Supply Voltage | 3.0 V ±10% (2.7–3.6 V) - compatible with standard 3V logic rails and eliminates need for separate NV backup supply |
| AutoStore Capacitor | VCAP pin requires 0.1 µF ceramic capacitor - provides energy for single STORE during brownout or power failure |
| Operating Temperature | –40°C to +85°C - qualified for industrial environments including PLCs and motor drives |
Pinout & Package
Package: 48-ball FBGA (6 mm × 8 mm, 0.8 mm pitch), RoHS-compliant, lead-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Input | Selects one of 262,144 16-bit words; A17 is MSB in x16 configuration |
| DQ0–DQ15 | Bidirectional Data I/O | 16-bit parallel data bus; tri-stated when OE HIGH or during STORE/RECALL |
| CE, WE, OE | Control Inputs | Active-low chip enable, write enable, and output enable - standard SRAM timing interface |
| BHE, BLE | Byte Enable | Independent control of upper/lower 8 bits in x16 mode; required for partial-word writes |
| HSB | Hardware Store Busy | Open-drain status/output: driven LOW during STORE/RECALL; pulled LOW externally to initiate hardware STORE |
| VCAP | AutoStore Capacitor Supply | Internal regulator charges external 0.1 µF cap; powers STORE operation during VCC collapse |
| VCC, VSS | Power/Ground | Single 3V supply domain; no separate NV or backup rail needed |
Key Features
| Feature | Design Value |
|---|---|
| QuantumTrap® Nonvolatile Cell | Embedded per-bit nonvolatile storage enabling true nvSRAM behavior without external EEPROM or battery |
| AutoStore® on Power Loss | Automatic STORE triggered by VCC drop below VSWITCH, using only VCAP capacitor - no firmware or host intervention required |
| Three-Mode STORE Initiation | Supports hardware (HSB pin), software (6-address sequence), and automatic (power-fail) STORE - enables flexible system-level data persistence strategies |
| Infinite SRAM Read/Write Cycles | Standard SRAM endurance unaffected by nonvolatile operations - suitable for high-frequency logging or buffer applications |
| Industrial Temperature Range | –40°C to +85°C operation with full timing compliance - validated for use in factory automation and transportation electronics |
Applications
| PLC Data Logging | Medical Device Parameter Storage |
|---|---|
Use Scenario: Storing real-time sensor readings and operational states in programmable logic controllers during runtime, with guaranteed retention across unexpected power interruptions. IC Role / Device Role / Timing Role: Nonvolatile SRAM providing immediate-access memory with automatic STORE on brownout, eliminating need for battery-backed RAM or external flash write management. Use Value: Enables deterministic 25 ns SRAM access during normal operation while ensuring zero-data-loss persistence - critical for safety-critical industrial sequences. | Use Scenario: Retaining calibration coefficients, patient settings, and diagnostic history in portable ultrasound or infusion pumps where power cycling is frequent and battery space is constrained. IC Role / Device Role / Timing Role: Drop-in x16 nvSRAM replacing battery-SRAM; RECALL restores last valid state on power-up, supporting fast boot and regulatory traceability requirements. Use Value: Eliminates battery replacement service intervals and leakage risks while maintaining full SRAM performance - reduces BOM count and improves device MTBF. |
| Avionics Configuration Memory | Smart Energy Meter Firmware State |
Use Scenario: Holding flight control configuration tables and fault history logs in airborne computing modules subject to rapid power cycling and wide thermal excursions. IC Role / Device Role / Timing Role: Industrial-grade nvSRAM with 20-year retention and –40°C to +85°C qualification - used as primary configuration store with hardware STORE/RECALL coordination via HSB. Use Value: Meets DO-160 environmental test requirements for vibration and temperature without derating; avoids flash wear leveling complexity in safety-critical contexts. | Use Scenario: Preserving tariff schedules, billing counters, and communication stack states in ANSI C12.22-compliant smart meters deployed in outdoor utility cabinets. IC Role / Device Role / Timing Role: High-reliability nvSRAM interfaced to MCU via 16-bit bus; AutoStore ensures meter state survives grid outages longer than supercapacitor hold-up time. Use Value: Achieves >99.99% data integrity over 20-year field life without periodic refresh or external NV management firmware - simplifies certification testing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FM24V10-G | 4 Mbit F-RAM (256K × 16), 45 ns access, 3V supply, no VCAP capacitor required | F-RAM offers 1014 read/write endurance but lower speed and no hardware STORE/RECALL pin (HSB) | Choose FM24V10-G if ultra-high endurance and simpler power design outweigh need for deterministic STORE timing and HSB signaling |
| AS4C4M16SA-6TCN | 4 Mbit standard SDR SDRAM (256K × 16), 6 ns access, 3.3V supply, volatile-only | No nonvolatile capability; requires external EEPROM + firmware for state save on power loss | Choose AS4C4M16SA-6TCN only if nvSRAM functionality is implemented externally and SRAM speed is secondary to cost |
Compared with FM24V10-G and AS4C4M16SA-6TCN, CY14B104N-ZS25XI uniquely delivers deterministic 25 ns SRAM performance combined with hardware-managed nonvolatility via HSB and VCAP-based AutoStore - essential for systems requiring zero-software-intervention data persistence during power transitions.
Availability
CY14B104N-ZS25XI is available at Aetrix Electronics and suitable for industrial PLCs, medical diagnostics equipment, avionics control units, and smart energy meters requiring stable component supply with guaranteed long-term lifecycle support.
Supply support for CY14B104N-ZS25XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets.
The CY14B nvSRAM product line targets applications needing battery-free, fast-access nonvolatile memory - specifically engineered to replace legacy battery-SRAM and simplify data retention architecture in harsh-environment electronics.
FAQ
What is the function of the HSB pin on CY14B104N-ZS25XI?
The HSB (Hardware Store Busy) pin serves dual roles: it signals STORE/RECALL progress as an open-drain output (driven LOW during operation), and accepts external LOW assertion to initiate a hardware STORE cycle. Internal weak pull-up holds it HIGH when unused. It is not present in 44-pin TSOP II packages but is available in 48-ball FBGA and 54-pin TSOP II variants.
How does AutoStore operate without firmware involvement?
AutoStore activates automatically when VCC drops below VSWITCH (~2.5 V). At that point, the internal regulator disconnects VCAP from VCC and uses stored charge in the external 0.1 µF capacitor to power a full parallel STORE of SRAM contents to QuantumTrap cells. No host processor action or clock cycles are required - the operation completes autonomously.
Can CY14B104N-ZS25XI be used in x8 mode?
No - CY14B104N is strictly 256K × 16 (x16) organization. The CY14B104L variant is the x8 version (512K × 8). Pinouts, address mapping (A0–A17), and byte enable usage (BHE/BLE) are defined exclusively for 16-bit interface; attempting x8 operation violates device specification and will result in incorrect addressing and data corruption.
What is the minimum VCAP capacitance required for reliable AutoStore?
The datasheet specifies a nominal 0.1 µF X7R ceramic capacitor on VCAP, rated ≥10 V. This value ensures sufficient energy for one complete STORE cycle across the full industrial temperature range and worst-case VCC droop profile. Larger values do not improve reliability and may delay VCAP charging; smaller values risk incomplete STORE under low-temperature or high-leakage conditions.
CY14B104N-ZS25XI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 25ns
- Access Time:
- 25 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY14B104N-ZS25XI FAQ
1.How can I place an order for CY14B104N-ZS25XI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY14B104N-ZS25XI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY14B104N-ZS25XI reliable?
The price and inventory of CY14B104N-ZS25XI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY14B104N-ZS25XI is usually 5 days.
3.What payment methods are accepted for CY14B104N-ZS25XI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY14B104N-ZS25XI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY14B104N-ZS25XI?
CY14B104N-ZS25XI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY14B104N-ZS25XI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY14B104N-ZS25XI?
For technical support, including CY14B104N-ZS25XI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY14B104N-ZS25XI requirements.
6.How does Aetrix verify that CY14B104N-ZS25XI is sourced from the original manufacturer or authorized distributors?
All CY14B104N-ZS25XI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY14B104N-ZS25XI meets industry standards.
7.What is the process for return or replacement of CY14B104N-ZS25XI?
All CY14B104N-ZS25XI units undergo pre-shipment inspection (PSI). If there is an issue with CY14B104N-ZS25XI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY14B104N-ZS25XI part is unused and in its original packaging.
Return procedure for CY14B104N-ZS25XI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY14B104N-ZS25XI Tags
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