Infineon Technologies CY14B104N-ZS25XIT
- Part No.:
- CY14B104N-ZS25XIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY14B104N-ZS25XIT.pdf
- Description:
- IC NVSRAM 4MBIT PAR 44TSOP II
- Quantity:
- Payment:

- Shipping:

Inventory:2,826
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY14B104N-ZS25XIT from Cypress Semiconductor is a 4 Mbit nonvolatile SRAM (nvSRAM) organized as 256K × 16, featuring QuantumTrap® nonvolatile storage, 25 ns access time, single 3V (+20% to –10%) supply operation, and AutoStore® on power loss using an external VCAP capacitor. It serves as drop-in SRAM replacement in industrial control modules requiring persistent data retention without battery backup.
For engineers reviewing the CY14B104N-ZS25XIT datasheet, CY14B104N-ZS25XIT pinout, CY14B104N-ZS25XIT application, or CY14B104N-ZS25XIT equivalent, key selection criteria include x16 bus interface support, HSB-driven hardware store control, software-initiated STORE/RECALL sequences, and 200,000 STORE cycle endurance with 20-year data retention.
Technical Context
This nvSRAM integrates standard SRAM cells with embedded QuantumTrap nonvolatile elements per cell, enabling parallel STORE/RECALL across all memory locations. It supports three STORE initiation methods: automatic (on VCC drop below VSWITCH), hardware (via HSB pin assertion), and software (six-address sequence).
RECALL occurs automatically at power-up or via software command; both operations inhibit SRAM read/write until completion. The device uses BHE/ BLE byte enables for x16 mode, requires no external power source for nonvolatile write, and maintains full SRAM timing compatibility during active operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4 Mbit (256K × 16 organization) |
| Access Time | 25 ns - guarantees maximum SRAM read latency under worst-case commercial temperature and voltage conditions |
| Supply Voltage | 3.0 V ±10% - operates from single rail without level shifters in 3.3V systems with margin |
| STORE Endurance | 200,000 cycles - defines maximum number of nonvolatile write operations before wear-out |
| Data Retention | 20 years at +85°C - verified retention period for stored data in QuantumTrap cells without refresh |
| Operating Temperature | –40°C to +85°C - qualified for industrial-grade embedded applications with thermal cycling |
| AutoStore Trigger | VCC < VSWITCH (2.7 V typ.) - initiates automatic STORE when main supply falls below switch threshold |
Pinout & Package
Package: 48-ball FBGA (6 mm × 8 mm, 0.8 mm pitch), RoHS-compliant, lead-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Input | Selects one of 262,144 16-bit words; A17 is MSB for x16 configuration |
| DQ0–DQ15 | Bidirectional Data I/O | 16-bit parallel data bus; tri-stated when OE HIGH or during STORE/RECALL |
| WE, CE, OE | Control Inputs | Active-low write enable, chip enable, output enable - standard SRAM control timing interface |
| BHE, BLE | Byte Enable | Independent control of upper (DQ15–DQ8) and lower (DQ7–DQ0) bytes in x16 mode |
| HSB | I/O Status/Control | Open-drain busy indicator and hardware STORE trigger; driven LOW during STORE execution |
| VCAP | Power Supply | Connects to external storage capacitor (typ. 0.1 µF); powers STORE operation during VCC dropout |
Key Features
| Feature | Design Value |
|---|---|
| QuantumTrap® Nonvolatile Cell | Embedded per-cell nonvolatile storage eliminates need for external EEPROM/NVRAM and battery backup |
| AutoStore® on Power Loss | Automatic STORE triggered by VCC drop below 2.7 V, using charge stored on VCAP capacitor |
| Software-Initiated STORE/RECALL | 6-address read sequence enables deterministic nonvolatile control without hardware signal dependency |
| Infinite SRAM Read/Write Cycles | Standard SRAM endurance unaffected by nonvolatile operations - no wear impact on volatile access |
| HSB Hardware Store Control | Open-drain HSB pin provides system-level visibility into STORE progress and enables synchronous hardware-triggered save |
Applications
| Industrial PLC Data Logging | Medical Device Configuration Storage |
|---|---|
Use Scenario: Storing real-time sensor calibration offsets and operational state during unexpected AC mains failure in programmable logic controllers. IC Role / Device Role / Timing Role: Nonvolatile SRAM providing immediate, transparent data persistence without firmware intervention on power loss. Use Value: Eliminates supercapacitor/battery subsystems while guaranteeing sub-25 ns SRAM performance and 20-year retention of critical runtime parameters. | Use Scenario: Preserving user-defined therapy settings and last-actuated alarm thresholds in portable infusion pumps during battery swap or low-power shutdown. IC Role / Device Role / Timing Role: x16-interface nvSRAM acting as primary configuration memory with deterministic RECALL at power-on reset. Use Value: Enables zero-delay restoration of clinical parameters post-power-cycle, meeting IEC 62304 Class C software safety requirements for data integrity. |
| Avionics Black Box Buffer | Smart Grid RTU Event History |
Use Scenario: Capturing high-frequency flight parameter snapshots (e.g., GPS timestamp, IMU readings) in airborne data acquisition units subject to vibration-induced power glitches. IC Role / Device Role / Timing Role: High-reliability nvSRAM with hardware STORE triggered by HSB to capture final valid state before brownout. Use Value: Provides deterministic, single-cycle STORE initiation independent of CPU availability - critical for DO-178C Level A traceability. | Use Scenario: Maintaining time-stamped fault records and relay trip logs in remote terminal units deployed in unattended substations with intermittent grid power. IC Role / Device Role / Timing Role: Industrial-temperature nvSRAM serving as tamper-resistant event buffer with AutoStore activation on grid collapse. Use Value: Ensures forensic log integrity across 20+ years without maintenance, satisfying IEEE 1379 and NERC CIP-002 compliance for critical infrastructure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STK14CA8-3LF35I | 4 Mbit (256K × 16), 35 ns access, uses internal capacitor; no HSB pin or software STORE sequence | Lacks hardware store signaling and deterministic software control - relies solely on power-loss detection | Choose when simplified AutoStore-only use case suffices and HSB monitoring is unnecessary |
| FM24V04-G | 4 Mbit F-RAM, 45 ns access, unlimited STORE cycles, no VCAP capacitor required | Different nonvolatile technology (ferroelectric RAM); no AutoStore delay or VCAP sizing constraints | Prefer when highest STORE endurance (>1014 cycles) and elimination of external capacitor are design priorities |
Compared with STK14CA8-3LF35I and FM24V04-G, CY14B104N-ZS25XIT uniquely balances deterministic hardware/software STORE control, 25 ns SRAM speed, and field-proven QuantumTrap reliability - making it optimal for industrial systems requiring both performance and guaranteed power-loss data capture.
Availability
CY14B104N-ZS25XIT is available at Aetrix Electronics and suitable for industrial PLCs, medical infusion pumps, avionics data recorders, and smart grid RTUs requiring stable component supply with long-term lifecycle assurance.
Supply support for CY14B104N-ZS25XIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets.
CY14B104N belongs to the QuantumTrap nvSRAM product line, engineered specifically for mission-critical applications where battery-free, fast, and guaranteed nonvolatile data retention is mandatory during power interruption.
FAQ
What is the function of the VCAP pin, and what capacitor value is required?
The VCAP pin connects to an external storage capacitor that supplies energy for the AutoStore operation during VCC dropout. Per datasheet specification 001-07102 Rev. *L, a 0.1 µF ceramic capacitor rated for ≥10 V is required. This capacitor must be placed within 5 mm of the VCAP pin with low-inductance routing to ensure reliable STORE execution under fast power-fail conditions.
How does the HSB pin behave during STORE and RECALL operations?
HSB is an open-drain output that is actively driven LOW during any STORE or RECALL operation - whether initiated by power loss, hardware request, or software sequence. It remains LOW for the full duration of the operation (tSTORE or tRECALL), then releases to HIGH only after completion. When unused, HSB may be left floating due to its internal weak pull-up.
Can CY14B104N-ZS25XIT be used in x8 mode, or is it strictly x16?
CY14B104N is specifically configured as 256K × 16 (x16) and is not pin-compatible with x8 operation. Its address range is A0–A17 (18 pins), and DQ lines are DQ0–DQ15. The CY14B104L variant supports x8 (512K × 8); mixing configurations requires board redesign and different pinout mapping.
What happens if a software STORE sequence is interrupted mid-execution?
If any address in the six-step sequence (0x4E38 → 0xB1C7 → 0x83E0 → 0x7C1F → 0x703F → 0x8FC0) is skipped, misordered, or followed by another access before tSS (soft-sequence processing time) elapses, the sequence aborts with no STORE executed. The device resumes normal SRAM operation immediately, and HSB remains HIGH - no error flag or status register indicates the abort.
CY14B104N-ZS25XIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 25ns
- Access Time:
- 25 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY14B104N-ZS25XIT FAQ
1.How can I place an order for CY14B104N-ZS25XIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY14B104N-ZS25XIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY14B104N-ZS25XIT reliable?
The price and inventory of CY14B104N-ZS25XIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY14B104N-ZS25XIT is usually 5 days.
3.What payment methods are accepted for CY14B104N-ZS25XIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY14B104N-ZS25XIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY14B104N-ZS25XIT?
CY14B104N-ZS25XIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY14B104N-ZS25XIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY14B104N-ZS25XIT?
For technical support, including CY14B104N-ZS25XIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY14B104N-ZS25XIT requirements.
6.How does Aetrix verify that CY14B104N-ZS25XIT is sourced from the original manufacturer or authorized distributors?
All CY14B104N-ZS25XIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY14B104N-ZS25XIT meets industry standards.
7.What is the process for return or replacement of CY14B104N-ZS25XIT?
All CY14B104N-ZS25XIT units undergo pre-shipment inspection (PSI). If there is an issue with CY14B104N-ZS25XIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY14B104N-ZS25XIT part is unused and in its original packaging.
Return procedure for CY14B104N-ZS25XIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY14B104N-ZS25XIT Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

