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Infineon Technologies CY14B104N-ZS45XI

Part No.:
CY14B104N-ZS45XI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
44-TSOP (0.400", 10.16mm Width)
Datasheet:
AetrixCY14B104N-ZS45XI.pdf
Description:
IC NVSRAM 4MBIT PAR 44TSOP II
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,005

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Product details

Overview

CY14B104N-ZS45XI from Cypress Semiconductor is a 4 Mbit nonvolatile SRAM (nvSRAM) with 256K × 16 organization, 45 ns access time, single 3V (+20% to –10%) supply, and QuantumTrap® nonvolatile storage. It performs automatic STORE on power loss using VCAP capacitor support and supports software- or hardware-initiated STORE/RECALL. Used in industrial controllers requiring persistent memory without battery backup.

For engineers reviewing the CY14B104N-ZS45XI datasheet, CY14B104N-ZS45XI pinout, CY14B104N-ZS45XI application, or CY14B104N-ZS45XI equivalent, key selection criteria include x16 bus interface compatibility, AutoStore timing under voltage droop, HSB-driven hardware store control, and 200,000 STORE cycle endurance with 20-year data retention.

Technical Context

This nvSRAM integrates parallel SRAM and QuantumTrap nonvolatile cells per bit, enabling simultaneous STORE/RECALL across all 256K words. The architecture decouples volatile read/write (infinite cycles) from nonvolatile STORE (200K max), with RECALL always restoring full contents on power-up.

STORE is triggered by power failure (via VCAP discharge below VSWITCH), HSB pin assertion, or six-address software sequence; RECALL occurs automatically at power-up or via identical six-address sequence. BHE/ BLE byte enables and HSB open-drain signaling are essential for system-level coordination of nonvolatile operations.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Size 4 Mbit organized as 256K × 16 - supports 16-bit microprocessor data bus without glue logic.
Access Time 45 ns - defines maximum clock rate for synchronous SRAM read/write cycles in real-time control systems.
Supply Voltage 3.0 V ±10% - compatible with standard 3.3V LDOs; no separate VIO rail required.
STORE Endurance 200,000 cycles - sets lifetime limit for frequent power-cycle logging applications.
Data Retention 20 years at +85°C - ensures long-term data integrity in unattended industrial deployments.
AutoStore Trigger VCC < VSWITCH (~2.7V) - initiates seamless STORE before system brownout disrupts operation.
VCAP Requirement 0.1 µF ceramic capacitor - provides ~1.5 ms hold-up time for complete STORE execution during power loss.

Pinout & Package

Package: 48-ball FBGA (9 mm × 7 mm, 0.8 mm pitch), RoHS-compliant, industrial temperature range (–40°C to +85°C).

Pin/Terminal Circuit Role Design Meaning
A0–A17 Address Input 18-bit address bus for 256K-word addressing; A17 is MSB in x16 mode.
DQ0–DQ15 Bidirectional Data I/O 16-bit parallel data path; tri-stated when OE HIGH or during STORE/RECALL.
CE Chip Enable (active LOW) Primary chip select; disables internal logic and IO buffers when HIGH.
WE Write Enable (active LOW) Controls write latching; must be held HIGH during software STORE/RECALL sequences.
OE Output Enable (active LOW) Enables DQ drivers during reads; must be HIGH during writes to avoid bus contention.
BHE / BLE Byte Enable (active LOW) Independent control of upper/lower 8 bits in x16 mode; enables partial-word writes.
HSB Hardware Store Busy (open-drain) Drives LOW during STORE/RECALL; used to stall CPU or initiate external action.
VCAP AutoStore Capacitor Terminal Connects to 0.1 µF capacitor; supplies energy for STORE when VCC drops below VSWITCH.

Key Features

Feature Design Value
QuantumTrap® Nonvolatile Storage Embedded per-cell nonvolatile element enables true infinite SRAM cycling while guaranteeing 20-year data retention without batteries or external EEPROM.
Three-Mode STORE Initiation Supports automatic (power-loss), hardware (HSB pin), and software (6-address sequence) STORE - gives system designers flexibility in fault-tolerant design.
Conditional AutoStore Ignores power-loss STORE unless at least one SRAM write occurred since last STORE/RECALL - prevents unnecessary wear on nonvolatile elements.
Hardware RECALL on Power-Up Automatic restoration of full 256K × 16 contents within tHRECALL (max 20 ms) - eliminates boot-time initialization delays.
Open-Drain HSB Signaling Allows wired-OR connection to system interrupt lines or status LEDs; simplifies monitoring of nonvolatile operation progress.

Applications

Industrial PLC Data Logging Medical Device Parameter Storage

Use Scenario: Programmable logic controller retains I/O state and alarm history across unexpected AC power loss.

IC Role / Device Role / Timing Role: Nonvolatile SRAM serves as power-fail-safe working memory; HSB signals STORE start to halt scan cycle.

Use Value: Eliminates need for supercapacitors or backup batteries while ensuring deterministic 45 ns read/write latency during normal operation.

Use Scenario: Infusion pump stores calibration coefficients, dosage logs, and error history without risk of data corruption during battery swaps.

IC Role / Device Role / Timing Role: Acts as primary configuration memory with guaranteed 20-year retention; RECALL restores settings within 20 ms at power-on.

Use Value: Meets IEC 62304 Class C software safety requirements by removing single-point failure modes associated with external NVM.

Telecom Base Station Control Automotive ADAS ECU Configuration

Use Scenario: Remote radio unit preserves RF tuning parameters and fault counters during grid instability or thermal shutdown.

IC Role / Device Role / Timing Role: x16 interface connects directly to ARM Cortex-A9 MPCore; VCAP-backed AutoStore activates below 2.7V.

Use Value: Achieves sub-10 ms STORE completion using 0.1 µF ceramic cap - avoids costly tantalum or electrolytic solutions.

Use Scenario: Camera ECU retains lens focus maps and sensor compensation tables across ignition cycles and cold cranking events.

IC Role / Device Role / Timing Role: Stores critical ADAS configuration in nonvolatile cell; software RECALL loads settings before CAN FD initialization.

Use Value: Supports AEC-Q100 Grade 2 (–40°C to +105°C) operation when paired with qualified VCAP and PCB layout.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nvSRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
STK14C88-45I 4 Mbit x16 nvSRAM, 45 ns, 3.3V, but uses older SONOS nonvolatile technology; 100K STORE cycles, 10-year retention. Lacks HSB pin and conditional AutoStore; requires external circuitry for power-fail detection. Prefer CY14B104N-ZS45XI where extended retention, higher endurance, or simplified power-loss handling is required.
FM24V10-G 1 Mbit F-RAM (x8), 45 ns, 3V, unlimited endurance, but smaller density and serial (SPI) interface - not pin-compatible. Requires SPI-to-parallel bridge for x16 MPU interfacing; no hardware STORE/RECALL control. Choose CY14B104N-ZS45XI for direct parallel bus integration, deterministic STORE timing, and 4 Mbit capacity.

Compared with STK14C88-45I and FM24V10-G, CY14B104N-ZS45XI delivers superior data retention (20 vs. 10 years), higher STORE endurance (200K vs. 100K cycles), and native x16 parallel interface with integrated HSB signaling - reducing BOM count and firmware complexity in industrial MPU designs.

Availability

CY14B104N-ZS45XI is available at Aetrix Electronics and suitable for industrial automation, medical device manufacturing, and telecom infrastructure projects requiring stable component supply, long-lifecycle assurance, and RoHS-compliant packaging.

Supply support for CY14B104N-ZS45XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets.

CY14B104N belongs to the QuantumTrap nvSRAM product line, engineered specifically for applications demanding battery-free nonvolatility, deterministic power-loss recovery, and seamless integration with 16-bit microprocessors.

FAQ

What is the minimum VCAP capacitance required for reliable AutoStore operation?

The CY14B104N-ZS45XI requires a 0.1 µF X7R ceramic capacitor on the VCAP pin to ensure successful STORE completion during VCC dropout. This value is validated for 45 ns access time grade and supports ≥1.5 ms hold-up time under worst-case load and temperature conditions. Larger values do not improve reliability and may increase power-up delay.

Can the HSB pin be left unconnected if hardware STORE is not used?

Yes - the HSB pin has an internal weak pull-up and may be left floating if unused. When disconnected, it remains HIGH during normal operation and does not affect SRAM functionality. However, leaving it unconnected forfeits real-time STORE progress indication and external hardware-triggered STORE capability.

Does software RECALL erase the nonvolatile memory contents?

No - software RECALL only transfers data from QuantumTrap cells into SRAM; it leaves the nonvolatile contents unchanged. This allows repeated RECALL without degrading STORE endurance. In contrast, software STORE performs an erase-then-program sequence on the nonvolatile array, consuming one of the 200,000 rated cycles.

Is the CY14B104N-ZS45XI compatible with 3.3V-only systems?

Yes - the device operates from 3.0 V ±10% (2.7 V to 3.6 V), making it fully compatible with standard 3.3V power rails. It does not require level-shifting for 3.3V I/O interfaces, and all control and data pins are 3.3V-tolerant. No external voltage translation is needed for MPU or FPGA connections.

CY14B104N-ZS45XI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
44-TSOP (0.400", 10.16mm Width)
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
NVSRAM
Technology:
NVSRAM (Non-Volatile SRAM)
Memory Size:
4Mbit
Memory Organization:
256K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
45ns
Access Time:
45 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
44-TSOP II

CY14B104N-ZS45XI FAQ

1.How can I place an order for CY14B104N-ZS45XI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY14B104N-ZS45XI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY14B104N-ZS45XI reliable?

The price and inventory of CY14B104N-ZS45XI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY14B104N-ZS45XI is usually 5 days.

3.What payment methods are accepted for CY14B104N-ZS45XI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY14B104N-ZS45XI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY14B104N-ZS45XI?

CY14B104N-ZS45XI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY14B104N-ZS45XI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY14B104N-ZS45XI?

For technical support, including CY14B104N-ZS45XI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY14B104N-ZS45XI requirements.

6.How does Aetrix verify that CY14B104N-ZS45XI is sourced from the original manufacturer or authorized distributors?

All CY14B104N-ZS45XI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY14B104N-ZS45XI meets industry standards.

7.What is the process for return or replacement of CY14B104N-ZS45XI?

All CY14B104N-ZS45XI units undergo pre-shipment inspection (PSI). If there is an issue with CY14B104N-ZS45XI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY14B104N-ZS45XI part is unused and in its original packaging.

Return procedure for CY14B104N-ZS45XI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY14B104N-ZS45XI Tags

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