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Infineon Technologies CY14B104N-ZS45XIT

Part No.:
CY14B104N-ZS45XIT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
44-TSOP (0.400", 10.16mm Width)
Datasheet:
AetrixCY14B104N-ZS45XIT.pdf
Description:
IC NVSRAM 4MBIT PAR 44TSOP II
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,473

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Product details

Overview

CY14B104N-ZS45XIT from Cypress Semiconductor is a 4 Mbit nonvolatile SRAM (nvSRAM) with QuantumTrap® technology, organized as 256K × 16 bits, 45 ns access time, single 3V (+20% to –10%) supply, and integrated AutoStore® on power loss. It serves as drop-in SRAM replacement in mission-critical industrial control and data logging systems requiring guaranteed data retention without external backup.

For engineers reviewing the CY14B104N-ZS45XIT datasheet, CY14B104N-ZS45XIT pinout, CY14B104N-ZS45XIT application, or CY14B104N-ZS45XIT equivalent, key selection criteria include x16 bus interface support, hardware STORE/RECALL via HSB pin, VCAP-based autonomous power-loss protection, and 200,000 STORE cycle endurance with 20-year data retention.

Technical Context

The CY14B104N-ZS45XIT integrates parallel SRAM and QuantumTrap nonvolatile storage in each cell, enabling simultaneous infinite SRAM read/write cycles and deterministic STORE/RECALL operations. Its architecture decouples volatile operation from nonvolatile persistence - SRAM functions identically to standard fast static RAM until STORE or RECALL is triggered.

STORE may be initiated by hardware (HSB pin assertion), software (6-address sequence), or automatically at power-down via VCAP-supplied energy. RECALL occurs on power-up or via software command, restoring full 256K × 16 contents to SRAM in ≤15 ms. The device inhibits SRAM access during STORE/RECALL and uses BHE/ BLE for byte-level control in x16 mode.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 4 Mbit (256K × 16 organization), directly replaces standard 256K × 16 SRAMs without redesign.
Access Time 45 ns max - meets timing requirements for 22 MHz bus interfaces with adequate setup/hold margins.
Supply Voltage 3.0 V ±10% (2.7–3.6 V) - compatible with modern 3V logic families and eliminates need for dual-voltage rails.
STORE Endurance 200,000 cycles - supports frequent power-cycle environments like programmable logic controllers and metering endpoints.
Data Retention 20 years at +85°C - ensures long-term archival integrity without battery or external NVM management.
AutoStore Trigger VCC < VSWITCH (2.5 V typ.) - initiates seamless STORE using charge stored on external VCAP capacitor (0.1 µF).
Operating Temperature –40°C to +85°C - qualified for industrial-grade embedded applications including factory automation and transportation systems.

Pinout & Package

Package: 48-ball FBGA (9 mm × 9 mm, 0.8 mm pitch), RoHS-compliant, lead-free.

Pin/Terminal Circuit Role Design Meaning
A0–A17 Address Input 18-bit address bus for 256K-word addressing; A18 unused in x16 mode.
DQ0–DQ15 Bidirectional Data I/O 16-bit parallel data path; supports byte-level writes via BHE/BLE control.
CE, WE, OE Control Inputs Standard SRAM control tri-state logic: CE enables chip, WE controls write, OE enables output buffers.
BHE, BLE Byte Enable Inputs Active-low signals selecting upper/lower 8 bits of DQ bus - essential for partial-word writes in x16 configuration.
HSB Hardware Store Busy Open-drain status/output pin: driven LOW during STORE/RECALL; can initiate STORE when externally pulled LOW.
VCAP AutoStore Capacitor Supply Internal regulator charges external 0.1 µF capacitor; provides energy for STORE during VCC collapse.
VCC, VSS Power/Ground Single 3V supply domain; VSS must be low-impedance connection to system ground plane.

Key Features

Feature Design Value
QuantumTrap® Nonvolatile Cell Embedded per-cell NVM enables true SRAM-compatible interface with no wear leveling or ECC overhead.
AutoStore® on Power Loss Zero-software intervention STORE triggered by VCC drop below 2.5 V, using only 0.1 µF capacitor on VCAP.
Hardware STORE/RECALL Control HSB pin provides both initiation and real-time status feedback - simplifies system-level power-fail response design.
Software-Controlled Operations 6-address sequences enable STORE/RECALL/AutoStore-enable/disable without external hardware changes.
Industrial Temperature Range –40°C to +85°C operation validated across full voltage and timing specs - suitable for uncontrolled environments.

Applications

Industrial PLC Data Buffer Smart Meter Firmware Storage

Use Scenario: Real-time I/O state buffering in programmable logic controllers during mains interruption.

IC Role / Device Role / Timing Role: Volatile SRAM front-end with automatic nonvolatile backup on brownout - preserves last valid scan cycle.

Use Value: Eliminates supercapacitor/battery backup circuitry while guaranteeing 20-year retention of critical operational snapshots.

Use Scenario: Storing tariff tables, calibration constants, and usage logs in ANSI C12.22-compliant electricity meters.

IC Role / Device Role / Timing Role: Primary nonvolatile memory for field-updatable parameters - accessed as standard SRAM during normal operation.

Use Value: Enables secure, wear-resistant parameter updates over PLC or RF links without flash programming delays or erase cycles.

Railway Signaling Event Logger Medical Diagnostic Equipment Cache

Use Scenario: Capturing train position, speed, and signal status during transient power faults in trackside cabinets.

IC Role / Device Role / Timing Role: High-reliability event buffer with deterministic STORE latency (<15 ms) and immunity to voltage ripple.

Use Value: Meets EN 5012x safety requirements for data integrity under rapid AC/DC supply collapse scenarios.

Use Scenario: Temporary storage of image acquisition buffers and calibration coefficients in portable ultrasound devices.

IC Role / Device Role / Timing Role: Low-latency SRAM with fail-safe recall - restores last valid imaging session after battery swap or cold start.

Use Value: Avoids re-initialization delays and ensures continuity of diagnostic workflow without host CPU involvement.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
STK14C88-45I 4 Mbit nvSRAM, 45 ns, x8-only (512K × 8), 44-pin TSOP II, no HSB pin, requires external STORE trigger logic. Lacks hardware STORE/RECALL signaling; unsuitable where real-time HSB status monitoring is required. Select only if x8 bus interface suffices and system-level STORE control is already implemented externally.
FM24CL04-G 4 Kbit F-RAM, I²C interface, 1 MHz clock, no STORE/RECALL latency, unlimited endurance, but 1000× lower density. Serial interface limits throughput; insufficient for high-speed parallel data capture or large firmware storage. Choose only for low-bandwidth parameter storage where byte-level random writes dominate over bulk SRAM replacement.

Compared with STK14C88-45I and FM24CL04-G, the CY14B104N-ZS45XIT uniquely delivers x16 parallel interface, integrated HSB signaling, and full 4 Mbit density with deterministic STORE/RECALL - making it the only option for industrial SRAM drop-in with autonomous power-loss resilience.

Availability

CY14B104N-ZS45XIT is available at Aetrix Electronics and suitable for industrial PLCs, smart utility meters, railway event loggers, and medical diagnostic equipment requiring stable component supply, long-lifecycle assurance, and guaranteed nonvolatile data integrity.

Supply support for CY14B104N-ZS45XIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications infrastructure markets.

The CY14B104N belongs to Cypress's nvSRAM product line, engineered specifically to replace battery-backed SRAM in harsh-environment applications where maintenance-free, long-term data retention is mandatory.

FAQ

What is the function of the VCAP pin?

The VCAP pin connects to an external 0.1 µF capacitor that stores energy used exclusively for the AutoStore operation during power loss. An internal regulator charges VCAP from VCC during normal operation; when VCC drops below 2.5 V, the device isolates VCAP and uses its stored charge to complete a single STORE cycle to QuantumTrap cells - no external power source or battery required.

How does the HSB pin behave during STORE and RECALL?

HSB is an open-drain output that is actively driven LOW during any STORE or RECALL operation - whether initiated by hardware, software, or AutoStore. It remains LOW until the operation completes, then releases HIGH. When externally pulled LOW, it initiates a conditional STORE only if at least one SRAM write has occurred since the last STORE/RECALL cycle.

Can CY14B104N-ZS45XIT operate in x8 mode?

No - CY14B104N is strictly a 256K × 16 (x16) device. The "N" suffix denotes x16 organization; the "L" variant (CY14B104L) is the x8 version (512K × 8). Pinouts, address mapping (A0–A17), and data bus width (DQ0–DQ15) are fixed for x16 operation and cannot be reconfigured for x8 use.

What happens if the software STORE sequence is interrupted?

If any address in the six-step sequence (0x4E38 → 0xB1C7 → 0x83E0 → 0x7C1F → 0x703F → 0x8FC0) is skipped, misordered, or followed by another access before tSS (soft-sequence processing time) elapses, the sequence aborts silently - no STORE occurs, and SRAM operation resumes immediately. No error flag or status bit indicates the failure.

CY14B104N-ZS45XIT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
44-TSOP (0.400", 10.16mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
NVSRAM
Technology:
NVSRAM (Non-Volatile SRAM)
Memory Size:
4Mbit
Memory Organization:
256K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
45ns
Access Time:
45 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
44-TSOP II

CY14B104N-ZS45XIT FAQ

1.How can I place an order for CY14B104N-ZS45XIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY14B104N-ZS45XIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY14B104N-ZS45XIT reliable?

The price and inventory of CY14B104N-ZS45XIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY14B104N-ZS45XIT is usually 5 days.

3.What payment methods are accepted for CY14B104N-ZS45XIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY14B104N-ZS45XIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY14B104N-ZS45XIT?

CY14B104N-ZS45XIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY14B104N-ZS45XIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY14B104N-ZS45XIT?

For technical support, including CY14B104N-ZS45XIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY14B104N-ZS45XIT requirements.

6.How does Aetrix verify that CY14B104N-ZS45XIT is sourced from the original manufacturer or authorized distributors?

All CY14B104N-ZS45XIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY14B104N-ZS45XIT meets industry standards.

7.What is the process for return or replacement of CY14B104N-ZS45XIT?

All CY14B104N-ZS45XIT units undergo pre-shipment inspection (PSI). If there is an issue with CY14B104N-ZS45XIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY14B104N-ZS45XIT part is unused and in its original packaging.

Return procedure for CY14B104N-ZS45XIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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