Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies CY14B108L-BA25XIT

Part No.:
CY14B108L-BA25XIT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
48-TFBGA
Datasheet:
AetrixCY14B108L-BA25XIT.pdf
Description:
IC NVSRAM 8MBIT PARALLEL 48FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,098

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY14B108L-BA25XIT from Cypress Semiconductor is an 8-Mbit nonvolatile SRAM (nvSRAM) with QuantumTrap technology, organized as 1024 K × 8, 25 ns access time, single 3 V (+20% / –10%) supply, and industrial temperature range (–40°C to +85°C). It performs automatic STORE on power-down using a VCAP capacitor and supports software/hardware-initiated STORE/RECALL for data retention in mission-critical logging and control systems.

For engineers reviewing the CY14B108L-BA25XIT datasheet, CY14B108L-BA25XIT pinout, CY14B108L-BA25XIT application, or CY14B108L-BA25XIT equivalent, key selection criteria include AutoStore reliability under brownout, HSB-controlled STORE timing, VCAP capacitor sizing, and ×8 vs ×16 configuration compatibility with host bus interfaces.

Technical Context

The device integrates standard SRAM cells with parallel QuantumTrap nonvolatile elements per cell, enabling simultaneous STORE/RECALL across all 1,048,576 bytes. STORE operations preserve data during power loss using charge stored on the external VCAP capacitor, with automatic initiation when VCC drops below VSWITCH (2.7 V typical).

Hardware STORE is triggered by driving HSB LOW, while software STORE uses a specific address sequence; both require at least one prior SRAM write since last STORE/RECALL. RECALL occurs automatically on power-up or via software command, restoring full memory contents in ≤15 ms (tHRECALL).

Key Specifications

Parameter Value and Actual Design Meaning
Memory Size 8 Mbit (1024 K × 8), providing 1 MiB of fast-access, byte-addressable volatile storage with nonvolatile backup.
Access Time 25 ns - ensures compatibility with high-speed microcontrollers and FPGAs operating up to ~30 MHz bus clocks.
Supply Voltage 3.0 V ±10% - eliminates need for dual-supply design; compatible with standard 3.3 V logic rails with margin.
Data Retention 20 years at +85°C - guarantees long-term archival integrity without battery or external NVM management.
STORE Endurance 1 million cycles - supports frequent logging in industrial controllers where power interruptions occur multiple times daily.
Operating Temp –40°C to +85°C - qualified for deployment in uncontrolled industrial enclosures and outdoor telemetry units.
VCAP Requirement 0.1 µF ceramic capacitor - provides sufficient energy for single STORE operation during VCC dropout ≥100 µs.

Pinout & Package

Package: 48-ball fine-pitch ball grid array (FBGA), RoHS-compliant, 7 mm × 9 mm footprint, 0.8 mm pitch.

Pin/Terminal Circuit Role Design Meaning
A0–A19 Address Input 20-bit address bus for ×8 mode; selects one of 1,048,576 bytes; A19 used only in ×8 configuration.
DQ0–DQ7 Bidirectional Data I/O 8-bit data bus; tristated when OE HIGH or during STORE/RECALL; shares pins with SRAM read/write paths.
WE Write Enable (Active LOW) Controls write latching; must be stable before and during write cycle; pull-up required at power-up to prevent spurious writes.
CE Chip Enable (Active LOW) Enables device decoding; deassertion disables all internal operations and places outputs in high-impedance state.
OE Output Enable (Active LOW) Activates output drivers during reads; must remain HIGH during writes to avoid bus contention.
HSB Hardware STORE Busy (I/O) Open-drain status signal: driven LOW during STORE/RECALL; pulled LOW externally to initiate hardware STORE.
VCAP AutoStore Capacitor Supply Internal regulator output; connects to 0.1 µF capacitor to sustain STORE operation during VCC collapse.
VCC / VSS Power / Ground Single 3 V supply rail; requires local 0.1 µF + 4.7 µF decoupling; VSS must be low-inductance ground plane connection.

Key Features

Feature Design Value
AutoStore on Power-Down Self-triggered STORE using VCAP energy when VCC falls below 2.7 V - no firmware or external supervisor IC required.
Parallel Cell Architecture All 1M cells STORE/RECALL simultaneously - eliminates block erase delays and guarantees atomic full-memory persistence.
Infinite SRAM Read/Write Cycles Standard SRAM interface behavior - enables real-time data buffering without wear leveling or endurance management.
Hardware STORE Control via HSB External assertion of HSB initiates deterministic STORE within tDELAY (≤100 ns) - supports fail-safe shutdown sequencing.
Software STORE/RECALL Commands Non-disruptive register-based commands - allows controlled persistence without halting host CPU or bus activity.

Applications

Industrial PLC Data Logging Medical Device Event Recorder

Use Scenario: Captures sensor readings, alarm timestamps, and operational states during runtime; retains data across unexpected AC loss or battery depletion.

IC Role / Device Role / Timing Role: Nonvolatile buffer between MCU and flash storage - absorbs burst writes and guarantees last-state persistence without EEPROM wear.

Use Value: Eliminates need for external supercapacitor supervision circuitry; 20-year retention meets IEC 62304 Class C data archiving requirements.

Use Scenario: Records ECG waveform metadata, calibration events, and fault diagnostics in portable defibrillators and infusion pumps.

IC Role / Device Role / Timing Role: Fail-safe memory for critical event logs - stores timestamped entries during power transition with <15 ms RECALL latency.

Use Value: Meets FDA-required "last known good state" recovery; 1M STORE cycles support >10 years of daily clinical use.

Telecom Base Station Configuration Automotive ADAS Black Box

Use Scenario: Holds FPGA configuration checksums, RF tuning parameters, and network registration keys across reboots and maintenance cycles.

IC Role / Device Role / Timing Role: Configuration vault - maintains settings during hot-swap module replacement and firmware updates.

Use Value: Prevents service interruption during field upgrades; 25 ns access enables direct mapping into ARM Cortex-A processor AXI bus.

Use Scenario: Stores pre-crash CAN bus snapshots, camera frame headers, and sensor fusion residuals in autonomous driving ECUs.

IC Role / Device Role / Timing Role: Crash-activated memory buffer - triggered by HSB assertion from power monitor IC upon voltage sag detection.

Use Value: Guarantees sub-100 µs STORE initiation after brownout onset; withstands –40°C to +85°C ambient per AEC-Q100 Grade 2.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nvSRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
FM24V01-G 1-Mbit F-RAM (not nvSRAM); 40 MHz SPI interface; no VCAP capacitor or STORE timing constraints. Lower density; serial interface only; unsuitable for parallel bus systems requiring SRAM timing compliance. Select only if system uses SPI and requires unlimited write endurance without STORE management overhead.
AS108-25PC 8-Mbit nvSRAM (1024K×8); 25 ns access; but uses older SONOS nonvolatile tech - 10-year retention, 100k STORE cycles. Shorter data retention and lower STORE endurance limit system lifetime in high-interrupt environments. Acceptable for cost-sensitive designs with infrequent power loss and shorter product lifecycle (<5 years).

Compared with FM24V01-G and AS108-25PC, CY14B108L-BA25XIT delivers superior 20-year retention and 10× higher STORE endurance while maintaining pin-compatible ×8 parallel interface - critical for legacy SRAM-based designs requiring zero firmware changes.

Availability

CY14B108L-BA25XIT is available at Aetrix Electronics and suitable for industrial PLC data logging, medical event recording, and telecom base station configuration requiring stable component supply, long-term lifecycle support, and guaranteed RoHS-compliant FBGA packaging.

Supply support for CY14B108L-BA25XIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets, with headquarters in San Jose, CA.

This part belongs to the QuantumTrap nvSRAM product line, engineered specifically for systems demanding deterministic, capacitor-backed nonvolatile storage without battery or firmware intervention - targeting fail-safe control and regulatory-compliant data retention.

FAQ

What is the minimum VCAP capacitor value required for reliable AutoStore operation?

The datasheet specifies a 0.1 µF X7R ceramic capacitor on the VCAP pin as mandatory for guaranteed AutoStore functionality. This value provides sufficient charge to complete a full 8-Mbit STORE within the specified tSTORE timing (≤15 ms) during VCC dropout events lasting ≥100 µs. Using smaller values risks incomplete STORE and data corruption.

Does CY14B108L-BA25XIT support ×16 bus configuration?

No - CY14B108L-BA25XIT is the ×8 variant (1024 K × 8), with address pins A0–A19 and data pins DQ0–DQ7. The ×16 variant is CY14B108N (512 K × 16), which uses A0–A18 and DQ0–DQ15, plus BHE/BLE pins. Pinouts and timing parameters differ; they are not pin-compatible or functionally interchangeable.

How does the HSB pin behave during a STORE operation initiated by software?

HSB is driven LOW by the device for the entire duration of the STORE cycle - regardless of initiation method (software, hardware, or AutoStore). After completion, HSB is actively driven HIGH for tHHHD (≤100 ns), then held HIGH by an internal 100 kΩ weak pull-up. Host firmware must monitor HSB to avoid issuing new commands until it returns HIGH.

Is the AutoStore Disable feature functional in this revision?

No - the datasheet errata (page 24) explicitly states that the AutoStore Disable feature does not work in this device. If VCAP is unconnected, AutoStore cannot be disabled via software sequence and will attempt (and fail) to execute on power-down, corrupting stored data. Always connect the 0.1 µF capacitor or disable AutoStore externally via system-level power monitoring.

CY14B108L-BA25XIT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
48-TFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
NVSRAM
Technology:
NVSRAM (Non-Volatile SRAM)
Memory Size:
8Mbit
Memory Organization:
1M x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
25ns
Access Time:
25 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-FBGA (6x10)

CY14B108L-BA25XIT FAQ

1.How can I place an order for CY14B108L-BA25XIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY14B108L-BA25XIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY14B108L-BA25XIT reliable?

The price and inventory of CY14B108L-BA25XIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY14B108L-BA25XIT is usually 5 days.

3.What payment methods are accepted for CY14B108L-BA25XIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY14B108L-BA25XIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY14B108L-BA25XIT?

CY14B108L-BA25XIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY14B108L-BA25XIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY14B108L-BA25XIT?

For technical support, including CY14B108L-BA25XIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY14B108L-BA25XIT requirements.

6.How does Aetrix verify that CY14B108L-BA25XIT is sourced from the original manufacturer or authorized distributors?

All CY14B108L-BA25XIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY14B108L-BA25XIT meets industry standards.

7.What is the process for return or replacement of CY14B108L-BA25XIT?

All CY14B108L-BA25XIT units undergo pre-shipment inspection (PSI). If there is an issue with CY14B108L-BA25XIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY14B108L-BA25XIT part is unused and in its original packaging.

Return procedure for CY14B108L-BA25XIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY14B108L-BA25XIT Tags

  • CY14B108L-BA25XIT
  • CY14B108L-BA25XIT PDF
  • CY14B108L-BA25XIT Datasheet
  • CY14B108L-BA25XIT Specifications
  • CY14B108L-BA25XIT Images
  • Infineon Technologies
  • Infineon Technologies CY14B108L-BA25XIT
  • Buy CY14B108L-BA25XIT
  • CY14B108L-BA25XIT Price
  • CY14B108L-BA25XIT Distributor
  • CY14B108L-BA25XIT Supplier
  • CY14B108L-BA25XIT Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER