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Infineon Technologies CY14B108L-BA45XI

Part No.:
CY14B108L-BA45XI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
48-TFBGA
Datasheet:
AetrixCY14B108L-BA45XI.pdf
Description:
IC NVSRAM 8MBIT PARALLEL 48FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,344

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Product details

Overview

CY14B108L-BA45XI from Cypress Semiconductor is an 8-Mbit nonvolatile SRAM (nvSRAM) with ×8 organization (1024 K × 8), 45 ns access time, single 3 V (+20% / –10%) supply, industrial temperature range (–40°C to +85°C), and QuantumTrap nonvolatile storage. It performs automatic STORE on power-down using a VCAP capacitor and supports software/hardware-initiated STORE/RECALL, enabling data retention in mission-critical industrial control and metering systems.

For engineers reviewing the CY14B108L-BA45XI datasheet, CY14B108L-BA45XI pinout, CY14B108L-BA45XI application, or CY14B108L-BA45XI equivalent, key selection criteria include AutoStore timing dependency on VCAP capacitance, HSB-driven hardware STORE arbitration, ×8 vs ×16 configuration pin compatibility, and 1 million STORE endurance versus infinite RECALL cycles.

Technical Context

This nvSRAM integrates standard fast SRAM array (2048 × 2048 × 2) with parallel QuantumTrap nonvolatile elements per cell. STORE and RECALL execute atomically across all memory cells, blocking SRAM access during operation. The device uses internal voltage regulation to charge VCAP and triggers AutoStore when VCC drops below VSWITCH (2.7 V typical).

Hardware STORE is initiated by driving HSB LOW, with tDELAY (100 ns min) allowing pending writes to complete. Software STORE uses address-based command sequences, while RECALL occurs automatically at power-up or via software - both restoring full 1024 K × 8 SRAM content from nonvolatile storage within tHRECALL (max 20 ms).

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 8 Mbit (1024 K × 8 organization)
Access Time 45 ns - defines maximum clock-to-data delay for read cycles under industrial temp and 3 V supply
Supply Voltage 3.0 V ±10% / +20% - requires stable regulated rail; VCAP must be externally connected for AutoStore
Data Retention 20 years at +85°C - guaranteed nonvolatile data hold without refresh or power
STORE Endurance 1 million cycles - limits total hardware/software/AutoStore operations over lifetime
Operating Temp –40°C to +85°C - validated for industrial environments without derating
Package 44-pin TSOP II (Type II) - surface-mount, 0.8 mm pitch, JEDEC MO-141AC compliant

Pinout & Package

Package: 44-pin Thin Small Outline Package (TSOP II), Type II, lead-free and RoHS compliant.

Pin/Terminal Circuit Role Design Meaning
A0–A19 Address Input 1024 K × 8 mode uses all 20 address lines; A19 is active (unlike ×16 variant)
DQ0–DQ7 Bidirectional Data I/O 8-bit data bus; tristated when OE HIGH or during STORE/RECALL
WE Write Enable (Active LOW) Controls write latching; must be held HIGH during AutoStore/RECALL to avoid bus contention
CE Chip Enable (Active LOW) Enables device operation; disables SRAM access when HIGH, but does not halt ongoing STORE
OE Output Enable (Active LOW) Activates output drivers during reads; must be HIGH during writes to prevent contention
HSB Hardware STORE Busy (I/O) Open-drain status signal: driven LOW during STORE/RECALL; pulled LOW externally to trigger hardware STORE
VCAP AutoStore Capacitor Supply Connects to 0.1 µF ceramic capacitor; powers STORE operation during VCC brownout
VCC / VSS Power / Ground Single 3 V supply; VSS must be low-impedance ground plane connection for noise immunity

Key Features

Feature Design Value
Hands-off AutoStore Zero-software intervention STORE on power loss, enabled by internal VCAP regulation and VSWITCH detection
Parallel STORE/RECALL All 8 Mbit transferred simultaneously between SRAM and QuantumTrap cells - no block addressing or sequencing required
Infinite SRAM cycles Unlimited read/write to volatile array - identical endurance to standard fast SRAM, independent of nonvolatile wear
Hardware STORE arbitration HSB pin provides deterministic external control with tDELAY timing margin to complete pending writes before STORE begins
Software-controlled STORE/RECALL Non-disruptive command sequences allow precise control without power cycling or external signals

Applications

Industrial Programmable Logic Controllers (PLCs) Smart Electricity Meters

Use Scenario: Preserving real-time operational state (e.g., ladder logic scan position, I/O register snapshots) during unexpected AC mains dropout.

IC Role / Device Role / Timing Role: Nonvolatile backup memory that retains critical runtime variables without battery or supercapacitor support.

Use Value: Eliminates need for external backup power circuitry while guaranteeing 20-year data retention and surviving >1M power-loss events.

Use Scenario: Storing tamper-proof energy consumption logs and tariff configuration during grid outages or meter reset events.

IC Role / Device Role / Timing Role: High-reliability data logger memory with atomic STORE triggered by VCC sag detection.

Use Value: Meets IEC 62056 compliance for secure metering data retention without EEPROM wear-out limitations.

Railway Signaling Controllers Medical Infusion Pumps

Use Scenario: Capturing last-known safe state (e.g., signal aspect, switch position, interlocking status) during train-side power interruption.

IC Role / Device Role / Timing Role: Fail-safe memory element ensuring deterministic recovery after brownout or hot-swap events.

Use Value: Supports SIL-2 functional safety requirements via predictable STORE latency (tSTORE ≤ 25 ms) and zero data corruption risk.

Use Scenario: Maintaining dose history, calibration offsets, and alarm thresholds across power cycles and battery swaps.

IC Role / Device Role / Timing Role: Regulatory-compliant nonvolatile storage for FDA 21 CFR Part 11 audit trails and device configuration.

Use Value: Avoids EEPROM rewrites and guarantees data integrity over 10+ years of clinical use without maintenance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nvSRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
FM24V10-G 4-Mbit density, 55 ns access, 2.7–3.6 V supply, integrated capacitor charging circuit eliminates external VCAP Lacks 8-Mbit capacity and 45 ns speed; better suited for space-constrained designs where capacitor footprint must be minimized Select if board area is constrained and 4 Mbit suffices; verify tSTORE meets system recovery timing budget
AS1C8M8P-45TIN 8-Mbit nvSRAM, 45 ns access, but uses SONOS nonvolatile technology and requires 3.3 V ±5% (tighter tolerance) Higher VCC stability requirement; no AutoStore disable errata - avoids known CY14B108L issue with HSB-based disable failure Prefer when strict supply regulation is available and AutoStore disable functionality is mandatory for system-level power sequencing

Compared with FM24V10-G and AS1C8M8P-45TIN, CY14B108L-BA45XI offers higher density and faster access than the former, and more relaxed supply tolerance than the latter - making it optimal for industrial systems requiring robustness across wide VCC and temperature ranges without sacrificing speed or capacity.

Availability

CY14B108L-BA45XI is available at Aetrix Electronics and suitable for industrial PLCs, smart electricity meters, and railway signaling controllers requiring stable component supply, long-term lifecycle support, and guaranteed RoHS-compliant sourcing.

Supply support for CY14B108L-BA45XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and IoT applications, with emphasis on mixed-signal integration and long-lifecycle support.

CY14B108L belongs to Cypress's QuantumTrap nvSRAM product line, engineered specifically for systems demanding battery-free nonvolatility, deterministic power-loss recovery, and seamless SRAM interface compatibility.

FAQ

What is the minimum VCAP capacitance required for reliable AutoStore operation?

The CY14B108L-BA45XI requires a minimum 0.1 µF X7R ceramic capacitor on the VCAP pin, rated for ≥10 V, placed within 5 mm of the package. This value ensures sufficient charge to complete a full 8-Mbit STORE within tSTORE (max 25 ms) when VCC drops from 3.0 V to VSWITCH (2.7 V). Larger values extend margin but do not improve timing.

Can CY14B108L-BA45XI operate in ×16 mode?

No. The CY14B108L-BA45XI is factory-configured for 1024 K × 8 organization only. Its pinout lacks BHE/ BLE pins and uses A19 as a valid address line - unlike the CY14B108N (×16 variant), which omits A19 and includes byte-enable inputs. Attempting ×16 operation will result in incorrect addressing and data corruption.

How does the AutoStore Disable errata affect system design?

The documented errata states that the AutoStore Disable feature - intended to suppress automatic STORE via software sequence - does not function. Systems requiring conditional STORE must instead use HSB-driven hardware STORE or software STORE exclusively, and ensure VCAP is either disconnected or actively managed to prevent unintended AutoStore during transient brownouts.

Is HSB pin pull-up required for normal operation?

An external pull-up on HSB is optional but recommended for noise immunity. The device includes a 100 kΩ internal weak pull-up; however, in electrically noisy industrial environments, a 10 kΩ external pull-up to VCC ensures rapid HIGH-state recovery post-STORE and prevents false LOW detection due to EMI coupling on the open-drain line.

CY14B108L-BA45XI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
48-TFBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
NVSRAM
Technology:
NVSRAM (Non-Volatile SRAM)
Memory Size:
8Mbit
Memory Organization:
1M x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
45ns
Access Time:
45 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-FBGA (6x10)

CY14B108L-BA45XI FAQ

1.How can I place an order for CY14B108L-BA45XI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY14B108L-BA45XI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY14B108L-BA45XI reliable?

The price and inventory of CY14B108L-BA45XI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY14B108L-BA45XI is usually 5 days.

3.What payment methods are accepted for CY14B108L-BA45XI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY14B108L-BA45XI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY14B108L-BA45XI?

CY14B108L-BA45XI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY14B108L-BA45XI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY14B108L-BA45XI?

For technical support, including CY14B108L-BA45XI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY14B108L-BA45XI requirements.

6.How does Aetrix verify that CY14B108L-BA45XI is sourced from the original manufacturer or authorized distributors?

All CY14B108L-BA45XI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY14B108L-BA45XI meets industry standards.

7.What is the process for return or replacement of CY14B108L-BA45XI?

All CY14B108L-BA45XI units undergo pre-shipment inspection (PSI). If there is an issue with CY14B108L-BA45XI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY14B108L-BA45XI part is unused and in its original packaging.

Return procedure for CY14B108L-BA45XI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY14B108L-BA45XI Tags

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