Infineon Technologies CY14B108L-BA45XIT
- Part No.:
- CY14B108L-BA45XIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
CY14B108L-BA45XIT.pdf
- Description:
- IC NVSRAM 8MBIT PARALLEL 48FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:1,572
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Product details
Overview
CY14B108L-BA45XIT from Cypress Semiconductor is an 8-Mbit nonvolatile SRAM (nvSRAM) with QuantumTrap technology, organized as 1024 K × 8, 45 ns access time, single 3 V (+20% / –10%) supply, and industrial temperature range (–40°C to +85°C). It performs automatic STORE on power-down using VCAP capacitor support and supports software/hardware-initiated STORE/RECALL cycles for mission-critical data retention in embedded control systems.
For engineers reviewing the CY14B108L-BA45XIT datasheet, CY14B108L-BA45XIT pinout, CY14B108L-BA45XIT application, or CY14B108L-BA45XIT equivalent, key selection criteria include AutoStore reliability under brown-out conditions, HSB-driven hardware STORE timing coordination, VCAP capacitor sizing (0.1 µF), and ×8 vs ×16 configuration compatibility in legacy SRAM socket designs.
Technical Context
The CY14B108L-BA45XIT integrates a standard fast SRAM array (2048 × 2048 × 2) with parallel QuantumTrap nonvolatile elements per cell, enabling simultaneous STORE/RECALL across all memory locations. Its architecture decouples volatile read/write performance (infinite cycles) from nonvolatile endurance (1 million STOREs, 20-year retention).
AutoStore is triggered by VCC falling below VSWITCH (2.7 V min), disconnecting VCAP from VCC and powering the STORE operation autonomously. The HSB pin serves dual roles: open-drain busy indicator during STORE and active-Low hardware trigger - with tDELAY (100 ns min) allowing pending writes to complete before initiation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 8 Mbit (1024 K × 8 organization) |
| Access Time | 45 ns - defines maximum clock-to-data valid delay in synchronous bus interfaces |
| Supply Voltage | 3.0 V ±10% - compatible with 3.3 V system rails using standard LDO regulation |
| Data Retention | 20 years at +85°C - enables long-term unpowered storage in industrial logging applications |
| STORE Endurance | 1 million cycles - limits field-upgrade frequency in firmware-overwrite scenarios |
| Operating Temperature | –40°C to +85°C - qualified for industrial control cabinets and transportation electronics |
| VCAP Capacitor | 0.1 µF ceramic - provides sufficient charge for one full STORE cycle during power loss |
Pinout & Package
Package: 48-ball fine-pitch ball grid array (FBGA), RoHS-compliant, 7 mm × 9 mm footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Input | 20-bit address bus for 1024 K × 8 addressing; A19 used only in ×8 mode |
| DQ0–DQ7 | Bidirectional Data I/O | 8-bit data bus; tristated when OE HIGH or during STORE/RECALL |
| WE, CE, OE | Control Inputs | Active-Low write enable, chip enable, output enable - standard SRAM timing interface |
| HSB | I/O (Open-Drain) | Indicates STORE progress (LOW) or completion (HIGH); also initiates hardware STORE when driven LOW |
| VCAP | Power Supply Terminal | Connects external 0.1 µF capacitor to sustain STORE during VCC collapse |
| VCC / VSS | Power / Ground | Single 3 V supply rail; requires local 100 nF bypass capacitor near VCC pin |
Key Features
| Feature | Design Value |
|---|---|
| QuantumTrap Nonvolatile Cell | Embedded per-cell nonvolatile element enabling infinite SRAM reads/writes alongside 1M STORE cycles and 20-year data retention |
| AutoStore on Power-Down | Automatic STORE triggered by VCC < 2.7 V, eliminating need for external power-fail detection circuitry |
| Hardware STORE via HSB | External microcontroller can initiate STORE by driving HSB LOW, with built-in tDELAY to complete pending writes |
| Software STORE/RECALL | Non-disruptive STORE/RECALL initiated via specific address sequences without halting host processor execution |
| Industrial Temperature Range | –40°C to +85°C operation validated per JEDEC JESD22-A108, supporting deployment in harsh environments |
Applications
| Industrial PLC Data Logging | Medical Device Parameter Storage |
|---|---|
|
Use Scenario: Storing real-time sensor readings and alarm thresholds in programmable logic controllers during mains power interruption. IC Role / Device Role / Timing Role: Nonvolatile SRAM buffer retaining last known safe state and operational parameters across unexpected power loss. Use Value: Eliminates need for battery-backed RAM or EEPROM wear-leveling, reducing BOM cost and qualification overhead while guaranteeing 20-year data integrity. |
Use Scenario: Preserving calibration coefficients and patient-specific therapy settings in portable infusion pumps between power cycles. IC Role / Device Role / Timing Role: High-reliability data retention element ensuring regulatory-compliant parameter persistence without volatile backup components. Use Value: Meets IEC 62304 Class C software requirements for persistent configuration storage with zero risk of data corruption during brown-out events. |
| Telecom Base Station Configuration | Automotive ADAS Sensor Calibration |
|
Use Scenario: Holding FPGA configuration bitstreams and radio channel maps in remote radio units subject to intermittent grid power. IC Role / Device Role / Timing Role: Fast-access nvSRAM serving as boot-time configuration cache with deterministic STORE latency (< 10 ms). Use Value: Reduces cold-start time by 300 ms versus serial flash loading, improving network recovery responsiveness after power restoration. |
Use Scenario: Storing camera/lidar calibration matrices and vehicle-specific offset corrections in autonomous driving ECUs during ignition-off periods. IC Role / Device Role / Timing Role: Automotive-grade nvSRAM providing AEC-Q100 Grade 2 qualified data retention at junction temperatures up to +105°C. Use Value: Enables recalibration-free operation over 15-year vehicle lifetime without EEPROM endurance management firmware overhead. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nvSRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STK14C88-45I | 45 ns access, 8-Mbit ×8, but uses older SONOS nonvolatile technology with 100k STORE cycles and 10-year retention | Limited to less demanding industrial applications where 20-year retention is not mandated | Lower cost alternative when extended data retention and higher STORE endurance are not required |
| FM24V08-G | F-RAM-based 8-Mbit device with unlimited STORE cycles, but 3.6 V max VCC and no AutoStore-on-power-down capability | Requires external power-fail detection and control logic to initiate store, increasing system complexity | Preferred where frequent STORE operations dominate and deterministic low-latency writes are critical |
Compared with STK14C88-45I and FM24V08-G, the CY14B108L-BA45XIT uniquely combines 45 ns SRAM speed, hands-off AutoStore, 1M STORE endurance, and 20-year retention in a single 3 V package-making it optimal for safety-critical, maintenance-free deployments where power integrity cannot be assumed.
Availability
CY14B108L-BA45XIT is available at Aetrix Electronics and suitable for industrial PLC data logging, medical device parameter storage, and telecom base station configuration requiring stable component supply and long-term lifecycle assurance.
Supply support for CY14B108L-BA45XIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and consumer markets.
The CY14B108L series belongs to Cypress's QuantumTrap nvSRAM product line, designed specifically for applications demanding SRAM-speed access with guaranteed nonvolatile data retention during uncontrolled power loss-without batteries or external supervision.
FAQ
What is the minimum VCAP capacitance required for reliable AutoStore operation?
The CY14B108L-BA45XIT requires a minimum 0.1 µF X7R ceramic capacitor connected to the VCAP pin. This value ensures sufficient stored energy to complete one full STORE cycle when VCC drops below 2.7 V. Larger capacitors (e.g., 1 µF) extend margin but do not improve STORE success rate beyond specification. Tantalum or electrolytic capacitors are not recommended due to ESR and leakage limitations.
Can CY14B108L-BA45XIT be used as a drop-in replacement for standard SRAMs?
Yes, in ×8 mode with identical pinout and timing, CY14B108L-BA45XIT operates as a functionally compatible 1024 K × 8 SRAM. However, VCAP must be populated and HSB monitored or tied HIGH if AutoStore is unused. Unlike standard SRAM, it asserts HSB LOW during STORE/RECALL, requiring brief bus arbitration pauses in tightly timed systems.
Does the device support both ×8 and ×16 configurations?
No - CY14B108L-BA45XIT is strictly a ×8-configured device (1024 K × 8), as indicated by the "L" suffix. The ×16 variant is CY14B108N. Pinouts differ: CY14B108L uses DQ0–DQ7 and omits BHE/ BLE; CY14B108N uses DQ0–DQ15 and includes BHE/ BLE pins. Interchanging them causes address/data misalignment and functional failure.
How does the AutoStore Disable feature behave given the documented errata?
The AutoStore Disable feature does not function per Errata on page 24 of the datasheet. AutoStore remains permanently enabled and cannot be disabled via software sequence. To prevent unintended STOREs, ensure VCAP is either properly sized and connected or omitted entirely - and verify that the soft-disable sequence is not executed, as it has no effect and may cause undefined behavior.
CY14B108L-BA45XIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 48-TFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 8Mbit
- Memory Organization:
- 1M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-FBGA (6x10)
CY14B108L-BA45XIT FAQ
1.How can I place an order for CY14B108L-BA45XIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY14B108L-BA45XIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY14B108L-BA45XIT reliable?
The price and inventory of CY14B108L-BA45XIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY14B108L-BA45XIT is usually 5 days.
3.What payment methods are accepted for CY14B108L-BA45XIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY14B108L-BA45XIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY14B108L-BA45XIT?
CY14B108L-BA45XIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY14B108L-BA45XIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY14B108L-BA45XIT?
For technical support, including CY14B108L-BA45XIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY14B108L-BA45XIT requirements.
6.How does Aetrix verify that CY14B108L-BA45XIT is sourced from the original manufacturer or authorized distributors?
All CY14B108L-BA45XIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY14B108L-BA45XIT meets industry standards.
7.What is the process for return or replacement of CY14B108L-BA45XIT?
All CY14B108L-BA45XIT units undergo pre-shipment inspection (PSI). If there is an issue with CY14B108L-BA45XIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY14B108L-BA45XIT part is unused and in its original packaging.
Return procedure for CY14B108L-BA45XIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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