Infineon Technologies CY14B108M-ZSP45XI

Overview

CY14B108M-ZSP45XI from Cypress Semiconductor is an 8-Mbit nonvolatile SRAM (512 K × 16) with integrated real-time clock, watchdog timer, and alarm functionality. It operates at 3.0 V ±10%, delivers 45 ns access time, supports infinite SRAM read/write cycles, and provides 1 million STORE cycles to QuantumTrap nonvolatile elements with 20-year data retention. Used in industrial control systems requiring persistent time-stamped data logging during power loss.

For engineers reviewing the CY14B108M-ZSP45XI datasheet, CY14B108M-ZSP45XI pinout, CY14B108M-ZSP45XI application, or CY14B108M-ZSP45XI equivalent, key selection criteria include ×16 bus interface support, RTC backup via VRTCcap/VRTCbat, AutoStore capacitor-based power-loss handling, and HSB-triggered hardware STORE with busy indication.

Technical Context

The device integrates a 512 K × 16 SRAM array with parallel QuantumTrap nonvolatile storage cells, enabling simultaneous STORE/RECALL across all locations. Its RTC subsystem includes leap-year correction, programmable alarm interrupts (minutes/hours/days/months), and a calibrated 32.768 kHz oscillator with Xin/Xout pins.

Power management is implemented through dual backup paths: VCAP supplies energy for AutoStore on VCC dropout, while VRTCcap or VRTCbat maintains RTC operation independently. The HSB pin serves both as STORE request input and open-drain busy status output, synchronized with internal STORE readiness timing (tHHHD).

Key Specifications

Pinout & Package

Package: 54-pin Thin Small Outline Package (TSOP II), RoHS-compliant, industrial temperature range (–40°C to +85°C).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nvSRAM with RTC applications.

Compared with STK15C88-45I and FM31L278-G, CY14B108M-ZSP45XI uniquely combines ×16 bus support, hardware STORE arbitration via HSB, capacitor-based AutoStore, and full RTC calendar/alarm - reducing BOM count and simplifying power-loss recovery logic.

Availability

CY14B108M-ZSP45XI is available at Aetrix Electronics and suitable for smart metering, industrial PLCs, medical infusion pumps, and telecom base station monitoring requiring stable component supply and long-term lifecycle assurance.

Supply support for CY14B108M-ZSP45XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability mixed-signal ICs for industrial, automotive, and IoT applications, with expertise in nonvolatile memory and timing solutions.

CY14B108M belongs to Cypress's nvSRAM product line, engineered to replace battery-backed SRAM and external RTC combinations in mission-critical systems demanding zero-data-loss power failover and precise timekeeping.

FAQ

What is the function of the HSB pin?

The HSB pin serves dual roles: as an input to request hardware STORE by pulling LOW, and as an open-drain output indicating STORE busy status (driven LOW during operation). After completion, it transitions HIGH via internal weak pull-up. It ignores STORE requests unless at least one SRAM write occurred since last STORE/RECALL, preventing spurious operations.

How does AutoStore work without external control?

AutoStore activates automatically when VCC falls below VSWITCH (typ. 2.5 V). The device disconnects VCAP from VCC and uses stored charge to power a full STORE cycle. A minimum 47 µF tantalum or 100 µF ceramic capacitor on VCAP is required; omission causes data corruption due to insufficient energy for complete nonvolatile write.

Can the RTC operate independently of the SRAM function?

Yes. The RTC runs continuously from VRTCcap or VRTCbat even when VCC is absent or the SRAM is disabled. It maintains time, alarms, and watchdog functions without interaction with memory operations. Registers remain accessible via I²C-like address-mapped reads/writes regardless of SRAM activity.

What is the difference between CY14B108K and CY14B108M?

CY14B108K is organized as 1024 K × 8 (8-bit bus), while CY14B108M is 512 K × 16 (16-bit bus). They share identical RTC, AutoStore, and packaging features but differ in address/data pin mapping: CY14B108M uses A0–A18 and DQ0–DQ15 with BHE/ BLE controls, whereas CY14B108K uses A0–A19 and DQ0–DQ7 only.