Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies CY14B108N-BA25XIT

Part No.:
CY14B108N-BA25XIT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
48-TFBGA
Datasheet:
AetrixCY14B108N-BA25XIT.pdf
Description:
IC NVSRAM 8MBIT PARALLEL 48FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,690

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY14B108N-BA25XIT from Cypress Semiconductor is an 8-Mbit nonvolatile SRAM (nvSRAM) with 512 K × 16 organization, single 3 V (+20% / –10%) supply operation, 25 ns access time, and QuantumTrap nonvolatile storage technology. It performs automatic STORE on power-down using a VCAP capacitor, supports software/hardware-initiated STORE/RECALL, and delivers 20-year data retention with 1 million STORE cycles. It is used in industrial control systems requiring persistent memory without battery backup.

For engineers reviewing the CY14B108N-BA25XIT datasheet, CY14B108N-BA25XIT pinout, CY14B108N-BA25XIT application, or CY14B108N-BA25XIT equivalent, key selection criteria include ×16 bus interface support, HSB-controlled hardware STORE timing, VCAP-based AutoStore reliability, and industrial temperature range compliance (–40°C to +85°C).

Technical Context

The CY14B108N-BA25XIT integrates standard SRAM and QuantumTrap nonvolatile elements in each cell, enabling parallel STORE/RECALL across all 524,288 words. Its architecture inhibits SRAM access during STORE/RECALL cycles and uses internal voltage switching at VSWITCH (~2.5 V) to trigger AutoStore when VCC drops.

It supports three STORE initiation methods: AutoStore (capacitor-powered), Hardware STORE (HSB pin assertion), and Software STORE (address sequence). RECALL occurs automatically on power-up or via software command, with HSB signaling busy status during both operations.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Size 8 Mbit organized as 512 K × 16 - enables 16-bit microprocessor/microcontroller interface without external data bus multiplexing.
Access Time 25 ns - guarantees fast read/write timing compatible with legacy 25 MHz bus systems and real-time control loops.
Supply Voltage 3.0 V ±10% - operates directly from standard 3.3 V LDO rails with no level-shifting required for I/O compatibility.
Data Retention 20 years at +85°C - ensures long-term data persistence in unpowered industrial environments without battery or supercapacitor maintenance.
STORE Endurance 1 million cycles - supports frequent nonvolatile save events in logging, configuration, or state-tracking applications.
Operating Temperature –40°C to +85°C - qualified for deployment in factory automation, motor drives, and outdoor embedded equipment.
VCAP Requirement 0.1 µF ceramic capacitor - provides sufficient charge for one full STORE cycle during brownout; eliminates need for external power-fail detection circuitry.

Pinout & Package

Package: 48-ball fine-pitch ball grid array (FBGA), RoHS-compliant, industrial-grade thermal profile.

Pin/Terminal Circuit Role Design Meaning
A0–A18 Address Input 19-bit address bus for 512 K-word addressing; A18 is MSB in ×16 mode.
DQ0–DQ15 Bidirectional Data I/O 16-bit parallel data path; supports byte-level writes via BHE/ BLE control.
WE, CE, OE Control Inputs Standard SRAM control signals (active-low); CE enables chip, WE gates write, OE enables output buffers.
BHE, BLE Byte Enable Inputs Active-low controls for upper/lower 8 bits of DQ bus; required for partial-word writes in ×16 mode.
HSB Hardware STORE Busy Open-drain status/output pin: driven LOW during STORE/RECALL; pulled LOW externally to initiate hardware STORE.
VCAP AutoStore Capacitor Terminal Connects to 0.1 µF capacitor; supplies regulated energy for STORE during VCC dropout - no external regulator needed.

Key Features

Feature Design Value
QuantumTrap Nonvolatile Cell Embedded per-cell nonvolatile element enables true parallel STORE/RECALL without block erase or wear leveling overhead.
AutoStore on Power-Down Automatic, capacitor-powered STORE triggered by VCC drop below VSWITCH (~2.5 V); requires no host intervention or firmware polling.
Software STORE/RECALL Initiated via specific address write sequences - allows deterministic, application-controlled persistence without relying on power events.
Infinite SRAM Read/Write Cycles Standard SRAM endurance unaffected by nonvolatile operations - supports high-frequency data buffering and real-time updates.
HSB Pin Signaling Provides hardware handshake for STORE/RECALL progress and completion - enables precise system-level synchronization and timeout handling.

Applications

Industrial PLC Data Logging Medical Device Configuration Storage

Use Scenario: Storing runtime parameters, calibration offsets, and alarm history in programmable logic controllers during mains interruption.

IC Role / Device Role: Nonvolatile memory buffer that retains critical process state without battery or EEPROM write delays.

Use Value: Eliminates risk of data loss during unexpected power loss; supports >1M STORE cycles over 10+ years of daily logging.

Use Scenario: Preserving user-defined therapy settings and device calibration data across power cycles in portable infusion pumps.

IC Role / Device Role: Fail-safe configuration store compliant with IEC 62304 Class C software requirements.

Use Value: Meets 20-year data retention at +85°C; avoids EEPROM wear-out and flash programming latency in safety-critical paths.

Telecom Base Station Timing Modules Automotive ADAS Sensor Calibration Memory

Use Scenario: Holding GPS-disciplined oscillator (GPSDO) holdover parameters and frequency offset corrections during AC failure.

IC Role / Device Role: Low-latency, high-reliability nvSRAM interfacing directly with FPGA or ARM-based timing controller.

Use Value: 25 ns access enables sub-microsecond parameter recall; VCAP-based AutoStore ensures zero-data-loss holdover initialization.

Use Scenario: Storing per-sensor gain/offset coefficients and lens distortion maps updated during vehicle service or OTA calibration.

IC Role / Device Role: Automotive-grade (–40°C to +85°C) nonvolatile memory accessible via CAN-connected microcontroller's parallel bus.

Use Value: Supports 1M STORE cycles for lifetime recalibration events; eliminates need for external SPI flash with slower write times.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nvSRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
STK14C88-3AJ 3V, 8-Mbit (512K × 16), 35 ns access, lithium battery-backed, no AutoStore or HSB pin. Requires external battery management, no power-loss detection; unsuitable for maintenance-free deployments. Select only if legacy battery-backed design must be maintained and capacitor-based AutoStore is not required.
FM24V10-G 3V, 1-Mbit F-RAM, 70 ns access, unlimited endurance, no VCAP or STORE/RECALL latency. Limited density (1 Mbit vs. 8 Mbit); lacks hardware STORE trigger (HSB) and deterministic RECALL timing. Prefer for high-write-cycle applications where density is secondary and latency-critical RECALL is unnecessary.

Compared with STK14C88-3AJ and FM24V10-G, the CY14B108N-BA25XIT uniquely combines high density, capacitor-based maintenance-free AutoStore, HSB-driven hardware control, and guaranteed 20-year retention - making it optimal for industrial systems demanding robust, deterministic nonvolatile storage without batteries or external supervision.

Availability

CY14B108N-BA25XIT is available at Aetrix Electronics and suitable for industrial PLCs, medical infusion devices, telecom timing modules, and automotive ADAS calibration systems requiring stable component supply, long-lifecycle assurance, and RoHS-compliant packaging.

Supply support for CY14B108N-BA25XIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets.

The CY14B nvSRAM product line targets applications needing battery-free, high-endurance nonvolatile storage with SRAM-speed access - specifically engineered for fail-safe data retention in mission-critical embedded systems.

FAQ

What is the function of the VCAP pin, and what capacitor value is required?

The VCAP pin connects to a 0.1 µF ceramic capacitor that supplies regulated energy for AutoStore during VCC dropout. This capacitor charges from VCC during normal operation and discharges to power the STORE operation when VCC falls below VSWITCH (~2.5 V). Using the specified value ensures full STORE completion within tSTORE (max 20 ms) and prevents data corruption due to insufficient charge.

How does the HSB pin operate during STORE and RECALL cycles?

HSB is an open-drain pin internally driven LOW during active STORE or RECALL operations, signaling busy status to the host system. After completion, it is actively driven HIGH for tHHHD (≤100 ns), then held HIGH by a 100 kΩ internal pull-up. Externally pulling HSB LOW initiates a hardware STORE, but only if at least one SRAM write has occurred since the last STORE/RECALL cycle.

Can CY14B108N-BA25XIT be used in ×8 mode, or is it strictly ×16?

The CY14B108N variant is specifically configured for 512 K × 16 organization and uses A0–A18 and DQ0–DQ15. It cannot operate in ×8 mode - that functionality is implemented in the CY14B108L variant (1024 K × 8, A0–A19, DQ0–DQ7). Pinouts, address mapping, and byte-enable logic are physically and electrically distinct between the two part numbers.

Is AutoStore disabled by default, and how is it controlled?

AutoStore is enabled by default and cannot be permanently disabled in hardware. However, it can be temporarily suppressed using a software sequence documented in the datasheet (page 8, "Preventing AutoStore"). This sequence clears the internal write latch, causing subsequent power-drop events to skip AutoStore - useful during development or debugging. The errata confirms the AutoStore Disable feature does not function in silicon.

CY14B108N-BA25XIT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
48-TFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
NVSRAM
Technology:
NVSRAM (Non-Volatile SRAM)
Memory Size:
8Mbit
Memory Organization:
512K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
25ns
Access Time:
25 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-FBGA (6x10)

CY14B108N-BA25XIT FAQ

1.How can I place an order for CY14B108N-BA25XIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY14B108N-BA25XIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY14B108N-BA25XIT reliable?

The price and inventory of CY14B108N-BA25XIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY14B108N-BA25XIT is usually 5 days.

3.What payment methods are accepted for CY14B108N-BA25XIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY14B108N-BA25XIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY14B108N-BA25XIT?

CY14B108N-BA25XIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY14B108N-BA25XIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY14B108N-BA25XIT?

For technical support, including CY14B108N-BA25XIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY14B108N-BA25XIT requirements.

6.How does Aetrix verify that CY14B108N-BA25XIT is sourced from the original manufacturer or authorized distributors?

All CY14B108N-BA25XIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY14B108N-BA25XIT meets industry standards.

7.What is the process for return or replacement of CY14B108N-BA25XIT?

All CY14B108N-BA25XIT units undergo pre-shipment inspection (PSI). If there is an issue with CY14B108N-BA25XIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY14B108N-BA25XIT part is unused and in its original packaging.

Return procedure for CY14B108N-BA25XIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY14B108N-BA25XIT Tags

  • CY14B108N-BA25XIT
  • CY14B108N-BA25XIT PDF
  • CY14B108N-BA25XIT Datasheet
  • CY14B108N-BA25XIT Specifications
  • CY14B108N-BA25XIT Images
  • Infineon Technologies
  • Infineon Technologies CY14B108N-BA25XIT
  • Buy CY14B108N-BA25XIT
  • CY14B108N-BA25XIT Price
  • CY14B108N-BA25XIT Distributor
  • CY14B108N-BA25XIT Supplier
  • CY14B108N-BA25XIT Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER