Infineon Technologies CY14B108N-ZSP45XIT

Overview

CY14B108N-ZSP45XIT from Cypress Semiconductor is an 8-Mbit nonvolatile SRAM (nvSRAM) with 512 K × 16 organization, 45 ns access time, single 3 V (+20% / –10%) supply operation, and QuantumTrap nonvolatile storage technology. It performs automatic STORE on power-down using a VCAP capacitor, supports software- and hardware-initiated STORE/RECALL, and delivers 20-year data retention with 1 million STORE cycles. It is used in industrial control modules requiring persistent memory without battery backup.

For engineers reviewing the CY14B108N-ZSP45XIT datasheet, CY14B108N-ZSP45XIT pinout, CY14B108N-ZSP45XIT application, or CY14B108N-ZSP45XIT equivalent, key selection criteria include ×16 bus interface support, HSB-driven hardware STORE timing, VCAP capacitor sizing (0.1 µF), AutoStore enable/disable behavior, and BHE/BLE byte-enable compatibility with 16-bit microprocessor buses.

Technical Context

The CY14B108N-ZSP45XIT integrates a standard fast SRAM array (512 K × 16) with parallel QuantumTrap nonvolatile elements per cell. STORE and RECALL operations execute atomically across all cells, blocking SRAM access during transfer. The device uses internal voltage monitoring to trigger AutoStore when VCC drops below VSWITCH (~2.7 V), drawing energy from the external VCAP capacitor.

Hardware STORE is initiated by driving HSB LOW, with built-in write-latch validation ensuring STORE only proceeds if at least one SRAM write occurred since last STORE/RECALL. Software STORE uses a specific address sequence, while RECALL occurs automatically on power-up or via software command - both preserving infinite read/write cycles in the SRAM portion.

Key Specifications

Pinout & Package

Package: 48-ball fine-pitch ball grid array (FBGA), RoHS-compliant, 6 mm × 8 mm footprint, 0.8 mm pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nvSRAM applications.

Compared with STK14C88-45I-WH1F and FM24V10-G, the CY14B108N-ZSP45XIT uniquely balances 8-Mbit density, 1-million STORE endurance, 45 ns speed, and zero-battery nonvolatility - making it optimal for industrial edge nodes needing compact, robust, and maintenance-free memory persistence.

Availability

CY14B108N-ZSP45XIT is available at Aetrix Electronics and suitable for industrial PLCs, medical diagnostic instruments, and telecom infrastructure requiring stable component supply, long-life qualification, and RoHS-compliant packaging.

Supply support for CY14B108N-ZSP45XIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets.

The CY14B108N-ZSP45XIT belongs to Cypress's QuantumTrap nvSRAM product line, engineered specifically for applications demanding battery-free, fast-access nonvolatile memory with guaranteed data retention across power interruptions.

FAQ

What is the function of the VCAP pin, and what capacitor value is required?

The VCAP pin connects to an external 0.1 µF ceramic capacitor that supplies energy for AutoStore during power loss. Cypress specifies this exact value to ensure sufficient charge for one complete STORE at minimum VCC (2.7 V). Placement within 10 mm of the pin and use of X7R dielectric are mandatory per layout guidelines in the datasheet.

Can CY14B108N-ZSP45XIT operate in ×8 mode?

No - CY14B108N is exclusively 512 K × 16 (×16) configured. The CY14B108L variant supports 1024 K × 8 (×8). Pinout, address width (A0–A18), and DQ count (DQ0–DQ15) are fixed for ×16 operation; no mode-select pins or internal configuration bits enable ×8 mode.

How does the HSB pin behave during STORE initiation and completion?

HSB is an open-drain output driven LOW by the device during any STORE (AutoStore, Hardware, or Software). After completion, it is actively driven HIGH for tHHHD (≤100 ns), then held HIGH by a 100 kΩ internal weak pull-up. If unused, HSB may be left floating - no external pull-up is required unless system-level busy detection is needed.

Is AutoStore disable supported, and how is it implemented?

Yes - AutoStore can be disabled via a software sequence (write 0x00 to address 0x0000, then 0x01 to 0x0001). However, errata document 001-45523 Rev. *P states the AutoStore Disable feature does not work in this silicon revision. Therefore, AutoStore remains permanently enabled, and a VCAP capacitor must be installed to prevent data corruption on power loss.