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Infineon Technologies CY14B116M-BZ45XI

Part No.:
CY14B116M-BZ45XI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY14B116M-BZ45XI.pdf
Description:
IC NVSRAM 16MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,876

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Product details

Overview

CY14B116M-BZ45XI from Infineon Technologies (formerly Cypress) is a 16-Mbit nonvolatile SRAM with integrated real-time clock, organized as 1024 K × 16, featuring 45-ns access time, AutoStore on power-down, software/hardware STORE/RECALL, and RTC with alarm, watchdog, and programmable square wave output. It serves as a drop-in replacement for battery-backed SRAM in industrial data logging systems requiring deterministic nonvolatile write retention.

For engineers reviewing the CY14B116M-BZ45XI datasheet, CY14B116M-BZ45XI pinout, CY14B116M-BZ45XI application, or CY14B116M-BZ45XI equivalent, key selection criteria include ×16 bus interface compatibility, VCC range (2.7–3.6 V), industrial temperature support (–40 °C to +85 °C), RTC backup current (0.45 µA typ), and FBGA/TSOP II package options with dual CE support.

Technical Context

The device integrates a high-speed SRAM array (4096 × 4096) with parallel QuantumTrap nonvolatile storage cells, enabling simultaneous STORE/RECALL across all memory locations without byte-by-byte sequencing. Its RTC subsystem includes a 32.768-kHz crystal oscillator, leap-year calendar logic, and interrupt-driven alarm/wdog events mapped to a single open-drain INT pin.

Power management is implemented via three distinct low-power states: standby (750 µA), sleep mode (10 µA, FBGA only), and AutoStore activation triggered by VCC decay monitored through VCAP. The HSB pin provides hardware handshake signaling for STORE completion, while CE1/CE2 logic enables dual-chip-enable arbitration in FBGA configurations.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 16 Mbit (1024 K × 16 organization), supporting 16-bit parallel data bus interface
Access Time 45 ns max - ensures compatibility with 22 MHz synchronous bus timing in legacy industrial controllers
STORE Endurance 1 million cycles - defines maximum guaranteed nonvolatile write operations before wear-out
Data Retention 20 years at +85 °C - specifies minimum archival integrity of stored data without refresh or power
RTC Backup Current 0.45 µA typical - enables >10-year operation on a single CR2032 coin cell (220 mAh)
VCC Operating Range 2.7 V to 3.6 V - matches standard 3.3-V system rails and allows direct connection to LDO outputs
Temperature Range –40 °C to +85 °C - qualified for use in uncontrolled industrial enclosures and outdoor telemetry nodes

Pinout & Package

Package: 54-pin TSOP II (×16 configuration) and 165-ball FBGA (dual CE, Sleep mode supported). Pinout validated per Cypress document #001-67786 Rev. *K, Figures 2 and 3.

Pin/Terminal Circuit Role Design Meaning
A0–A19 Address Inputs Selects one of 1,048,576 × 16-bit words; A19 is MSB for full address space coverage
DQ0–DQ15 Bidirectional Data I/O 16-bit parallel data path; DQ0–DQ7 = lower byte, DQ8–DQ15 = upper byte under BHE/BLE control
CE1 / CE2 Dual Chip Enable FBGA-only logic pair: CE1↓+CE2↑ or CE1↑+CE2↓ initiates access; enables multi-device decoding
HSB Hardware STORE Busy Open-drain status signal: LOW during STORE execution; can be externally asserted to trigger STORE
INT Programmable Interrupt Output Configurable as alarm/wdog/power-fail indicator or 1 Hz / 512 Hz / 4.096 kHz / 32.768 kHz square wave source
VCAP AutoStore Capacitor Supply Connects to 4.7 µF tantalum cap; supplies energy for SRAM→QuantumTrap transfer during VCC collapse
VRTCcap / VRTCbat RTC Backup Supply Separate pins for capacitor (VCAP-like) or battery (coin cell) RTC backup; mutually exclusive usage

Key Features

Feature Design Value
Hands-off AutoStore Zero-software intervention STORE on VCC dropout using external VCAP capacitor - eliminates firmware dependency for power-loss protection
Parallel STORE/RECALL All 1024 K words transferred simultaneously between SRAM and QuantumTrap cells - reduces nonvolatile operation latency to ≤15 ms
RTC Calendar Accuracy Leap-year compensation and ±2 ppm oscillator calibration - sustains ±1 second/day accuracy over full industrial temperature range
Flexible RTC Output Single INT pin supports alarm interrupt, watchdog timeout pulse, or continuous square wave at four selectable frequencies
Sleep Mode (FBGA only) 10 µA quiescent current with RTC active - enables ultra-low-power remote sensor nodes with infrequent wake-up intervals

Applications

Industrial Data Logger Medical Device Memory Buffer

Use Scenario: Continuous acquisition of sensor readings (temperature, pressure, ECG) with periodic power cycling in portable diagnostic equipment.

IC Role / Device Role / Timing Role: Nonvolatile buffer storing last valid measurement set and RTC-maintained timestamps prior to shutdown.

Use Value: Guarantees zero data loss during unexpected power removal; RTC alarm wakes host MCU at scheduled intervals for data upload.

Use Scenario: Patient monitor capturing waveform snapshots during intermittent battery operation and AC recharging cycles.

IC Role / Device Role / Timing Role: Dual-role memory: SRAM holds live waveform buffers; RTC tracks session start/end and alarm triggers.

Use Value: Eliminates need for external battery-backed RAM and discrete RTC IC, reducing BOM count and PCB area by 35%.

Smart Energy Meter PLC I/O Module Cache

Use Scenario: Utility meter recording kWh consumption, tamper events, and voltage sags with timestamped logs retained across 15-year service life.

IC Role / Device Role / Timing Role: Primary nonvolatile storage for billing-critical data; RTC provides accurate time-of-use metering and demand-response scheduling.

Use Value: Meets ANSI C12.1 and IEC 62053-21 requirements for 20-year data retention and ±1 sec/day RTC accuracy without battery replacement.

Use Scenario: Programmable logic controller module caching I/O state changes and diagnostic counters during fieldbus communication interruptions.

IC Role / Device Role / Timing Role: High-reliability shadow memory preserving process state during brownouts; HSB pin signals STORE completion to PLC firmware.

Use Value: Enables deterministic recovery within 100 ms after power restoration - critical for safety-rated motion control loops.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nvSRAM with RTC applications.

Alternative Part Technical Difference Application Difference Selection Advice
STK14C88-3AJ5F 8-Mbit ×8 only; no RTC; 35 ns access; requires external capacitor for STORE Lacks integrated RTC and ×16 interface - necessitates separate RTC IC and bus-width adaptation logic Choose when RTC functionality is handled elsewhere and cost sensitivity outweighs integration benefit
FM33256B-DBQ-TR 256-Kbit FRAM + RTC; 60 ns access; unlimited endurance; no STORE delay or VCAP required Lower density limits use to small parameter tables; FRAM eliminates STORE latency but lacks 16-Mbit capacity Prefer for ultra-high-write-cycle applications where 16-Mbit scale is unnecessary and latency must be zero

Compared with STK14C88-3AJ5F and FM33256B-DBQ-TR, CY14B116M-BZ45XI uniquely delivers 16-Mbit ×16 nvSRAM + full RTC in one package, balancing density, deterministic STORE timing, and industrial-grade data retention - making it optimal for embedded systems requiring both large nonvolatile buffers and precise timekeeping.

Availability

CY14B116M-BZ45XI is available at Aetrix Electronics and suitable for industrial data loggers, smart energy meters, medical diagnostic devices, and PLC I/O modules requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for CY14B116M-BZ45XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its portfolio of high-reliability memory and timing solutions for industrial and automotive markets.

This part belongs to the nvSRAM + RTC product line, designed specifically for mission-critical applications where data integrity during power loss and accurate time stamping cannot be compromised - such as utility infrastructure, patient monitoring, and factory automation.

FAQ

What is the function of the HSB pin during normal operation?

The HSB (Hardware STORE Busy) pin operates as an open-drain status indicator. During a STORE operation-whether initiated by power-down, software command, or external LOW assertion-HSB is driven LOW. Once STORE completes, it transitions HIGH via internal weak pull-up. It can also be used as an input to trigger STORE when pulled LOW by external circuitry, enabling hardware-controlled nonvolatile writes independent of firmware.

Can VRTCcap and VRTCbat be used simultaneously?

No. VRTCcap and VRTCbat are mutually exclusive RTC backup supply inputs. VRTCcap is intended for capacitor-based backup (e.g., 0.1–0.47 F supercapacitor), while VRTCbat accepts a 1.8–3.6 V battery (e.g., CR2032). Only one should be connected; the other must remain floating. Using both risks reverse current flow and may damage the RTC power management circuitry.

How does the AutoStore mechanism ensure data integrity during rapid power loss?

AutoStore relies on the VCAP capacitor (typically 4.7 µF) charged to VCC. When VCC drops below ~2.5 V, internal circuitry detects the decay and initiates STORE within 10 µs. The capacitor supplies regulated current to complete SRAM-to-QuantumTrap transfer in ≤15 ms. This design guarantees full 16-Mbit retention even if VCC collapses in under 100 µs, provided VCAP meets minimum capacitance and ESR specs per datasheet Section 30.

Is the CY14B116M-BZ45XI compatible with legacy CY14B116M designs?

Yes. CY14B116M-BZ45XI is a direct replacement for earlier CY14B116M variants with identical pinout (54-pin TSOP II), electrical specifications, timing parameters, and register-level RTC programming model. Infineon maintains full backward compatibility, including identical device ID, command set, and initialization sequence - no PCB or firmware changes are required for migration.

CY14B116M-BZ45XI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
NVSRAM
Technology:
NVSRAM (Non-Volatile SRAM)
Memory Size:
16Mbit
Memory Organization:
1M x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
45ns
Access Time:
45 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (15x17)

CY14B116M-BZ45XI FAQ

1.How can I place an order for CY14B116M-BZ45XI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY14B116M-BZ45XI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY14B116M-BZ45XI reliable?

The price and inventory of CY14B116M-BZ45XI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY14B116M-BZ45XI is usually 5 days.

3.What payment methods are accepted for CY14B116M-BZ45XI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY14B116M-BZ45XI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY14B116M-BZ45XI?

CY14B116M-BZ45XI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY14B116M-BZ45XI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY14B116M-BZ45XI?

For technical support, including CY14B116M-BZ45XI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY14B116M-BZ45XI requirements.

6.How does Aetrix verify that CY14B116M-BZ45XI is sourced from the original manufacturer or authorized distributors?

All CY14B116M-BZ45XI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY14B116M-BZ45XI meets industry standards.

7.What is the process for return or replacement of CY14B116M-BZ45XI?

All CY14B116M-BZ45XI units undergo pre-shipment inspection (PSI). If there is an issue with CY14B116M-BZ45XI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY14B116M-BZ45XI part is unused and in its original packaging.

Return procedure for CY14B116M-BZ45XI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY14B116M-BZ45XI Tags

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