Infineon Technologies CY14B116N-BA25XIT

Overview

CY14B116N-BA25XIT from Infineon Technologies (formerly Cypress) is a 16-Mbit nonvolatile SRAM (nvSRAM) with ×16 organization (1024K × 16), 25-ns access time, 2.7–3.6 V supply, and industrial temperature range (–40 °C to +85 °C). It integrates QuantumTrap nonvolatile storage per cell and supports automatic STORE on power-down, software STORE/RECALL, and hardware-triggered STORE via HSB pin - deployed in mission-critical data logging and industrial control systems where volatile memory persistence is essential.

For engineers reviewing the CY14B116N-BA25XIT datasheet, CY14B116N-BA25XIT pinout, CY14B116N-BA25XIT application, or CY14B116N-BA25XIT equivalent, key selection criteria include ×16 bus interface compatibility, AutoStore capacitor (VCAP) support, HSB-driven STORE timing, sleep mode availability (FBGA only), and RoHS-compliant 54-pin TSOP II packaging.

Technical Context

This nvSRAM combines a high-speed 25-ns SRAM array with embedded QuantumTrap nonvolatile elements, enabling infinite SRAM read/write cycles and 1 million STORE cycles to nonvolatile storage. Data retention is guaranteed for 20 years without external power.

The device operates in three data width configurations (×8/×16/×32); CY14B116N is specifically ×16, using address pins A0–A19 and bidirectional DQ0–DQ15. STORE is triggered by power loss (via VCAP), HSB pin assertion, or software command; RECALL occurs automatically at power-up or via software.

Key Specifications

Pinout & Package

Package: 54-pin thin small-outline package (TSOP II), RoHS-compliant, surface-mount, 0.5 mm pitch, 12.0 × 20.0 mm footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Compared with CY14B116N-BA35XIT, the -BA25XIT delivers tighter timing margin for high-speed controllers; versus FM16W08, it provides guaranteed hands-off STORE on power loss but requires VCAP design and has finite STORE endurance.

Availability

CY14B116N-BA25XIT is available at Aetrix Electronics and suitable for industrial PLCs, medical diagnostics equipment, automotive telematics units, and smart grid infrastructure requiring stable component supply and long-lifecycle support.

Supply support for CY14B116N-BA25XIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions with emphasis on reliability and industrial longevity.

CY14B116N belongs to Infineon's nvSRAM product line, designed specifically for applications demanding instant nonvolatility, zero-battery operation, and deterministic data preservation during uncontrolled power events.

FAQ

What is the role of the VCAP pin, and what capacitor value is required?

The VCAP pin connects an external capacitor (typically 4.7 µF tantalum or polymer) that supplies hold-up energy during power loss to complete the AutoStore operation. Per datasheet Figure 21 and Section "AutoStore Operation", a minimum 4.7 µF capacitance with ≤100 mΩ ESR ensures reliable STORE across the full temperature and voltage range. The capacitor must be placed within 5 mm of VCAP and tied to VSS with short, low-inductance traces.

How does the HSB pin function during a STORE operation?

HSB serves dual roles: as an open-drain output signaling STORE progress (driven LOW during STORE), and as an input accepting external LOW pulses to initiate hardware STORE. After STORE completion, HSB is driven HIGH for tHHHD (min. 100 ns), then held HIGH by a weak internal pull-up. An external 10-kΩ pull-up is optional but recommended for noise immunity in noisy industrial environments.

Is sleep mode supported in the CY14B116N-BA25XIT TSOP II package?

No. Sleep mode (activated via ZZ pin) is only available in the 165-ball FBGA package variant, as explicitly stated in Pin Definitions (Page 7, Note 9) and confirmed in Package Diagrams (Figure 6). The 54-pin TSOP II package (CY14B116N-BA25XIT) lacks the ZZ pin and associated sleep control logic - standby current remains at 650 µA, not the 10 µA achievable in FBGA sleep mode.

Can CY14B116N be used in a ×8 or ×32 data bus configuration?

No. CY14B116N is factory-configured exclusively for ×16 operation (1024K × 16), using A0–A19 and DQ0–DQ15. The "B" suffix denotes the 2.7–3.6 V voltage grade, and "N" explicitly specifies ×16 organization. ×8 and ×32 variants are separate part numbers: CY14B116L (×8) and CY14B116S (×32), each with distinct pinouts, address/data mappings, and byte-enable pin assignments (BLE/BHE or BA/BB/BC/BD).