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Infineon Technologies CY14B116N-BZ25XI
- Part No.:
- CY14B116N-BZ25XI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY14B116N-BZ25XI.pdf
- Description:
- IC NVSRAM 16MBIT PAR 165FBGA
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
CY14B116N-BZ25XI from Infineon Technologies (formerly Cypress) is a 16-Mbit nonvolatile SRAM (nvSRAM) with ×16 organization (1024K × 16), 25-ns access time, 2.7–3.6 V supply, and industrial temperature range (–40 °C to +85 °C). It integrates QuantumTrap nonvolatile storage per cell, enabling automatic STORE on power-down and software/hardware-controlled RECALL-used in mission-critical data logging, industrial PLCs, and telecom control planes where volatile memory loss must be eliminated.
For engineers reviewing the CY14B116N-BZ25XI datasheet, CY14B116N-BZ25XI pinout, CY14B116N-BZ25XI application, or CY14B116N-BZ25XI equivalent, key selection factors include its 25-ns read timing, dual CE support in TSOP I/FBGA packages, HSB-driven hardware STORE signaling, VCAP-supervised AutoStore, and sleep mode current of 10 µA-critical for low-power, fail-safe memory retention in edge controllers and embedded instrumentation.
Technical Context
This nvSRAM combines a high-speed 2048K × 8 / 1024K × 16 / 512K × 32 static RAM array with integrated QuantumTrap nonvolatile elements. STORE transfers data from SRAM to nonvolatile cells via hardware (HSB pin), software command, or automatic power-loss detection using the VCAP capacitor; RECALL restores data on power-up or via software.
The device supports three operating modes: active (75 mA at 45 ns), standby (650 µA), and sleep (10 µA, FBGA only). Addressing differs by configuration: A0–A19 for ×16 mode; DQ0–DQ15 are bidirectional I/O; CE1/CE2 enable dual-chip-select logic in FBGA packages, while TSOP II uses single CE.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size & Organization | 16 Mbit, configured as 1024K × 16 words - enables byte-aligned 16-bit microcontroller bus interfacing without external multiplexing. |
| Access Time | 25 ns - guarantees sub-40-MHz synchronous read/write timing for real-time control loops and deterministic data capture. |
| Supply Voltage | 2.7 V to 3.6 V - compatible with 3.3 V industrial logic rails and tolerant of brown-out conditions down to 2.7 V. |
| Data Retention | 20 years - ensures long-term firmware state preservation in unpowered equipment such as remote sensors and backup modules. |
| STORE Endurance | 1 million cycles - supports daily power-cycle logging in industrial gateways over >27 years of field operation. |
| Sleep Current | 10 µA - enables battery-backed operation for >1 year on a single CR2032 cell in maintenance-free monitoring nodes. |
| Operating Temperature | –40 °C to +85 °C - validated for deployment in outdoor enclosures, factory floors, and vehicle-mounted control units. |
Pinout & Package
Package: 48-pin Thin Small-Outline Package (TSOP I), RoHS-compliant, surface-mountable with 0.5 mm pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Inputs | Select one of 1,048,576 × 16-bit locations; full address range required for linear memory mapping in ARM Cortex-M4/M7 systems. |
| DQ0–DQ15 | Bidirectional Data I/O | 16-bit parallel data path; supports burst reads/writes and byte-enable masking via BHE/BLE pins for partial-word updates. |
| CE1, CE2 | Dual Chip Enable Inputs | Enables hierarchical memory decoding: CE1 LOW + CE2 HIGH initiates access - allows shared bus arbitration with multiple nvSRAMs or peripherals. |
| WE | Write Enable | Active-LOW signal synchronizes write strobes; must meet tWP (25 ns min) and tWH (15 ns min) for reliable data capture into SRAM array. |
| OE | Output Enable | Controls tri-state output drivers; deassertion (HIGH) isolates DQ bus during DMA transfers or multi-master arbitration. |
| HSB | Hardware STORE Busy | Open-drain output signals STORE progress (LOW); externally pulled HIGH to initiate STORE - used for deterministic nonvolatile commit in safety-critical firmware. |
| VCAP | AutoStore Capacitor Terminal | Connects to 4.7 µF tantalum capacitor; supplies regulated energy during VCC collapse to complete STORE within 20 ms - eliminates need for backup batteries. |
| ZZ | Sleep Mode Enable | Available only in FBGA variants; not present in this TSOP I package - sleep mode is not supported for CY14B116N-BZ25XI. |
Key Features
| Feature | Design Value |
|---|---|
| QuantumTrap Nonvolatile Storage | Embedded per-cell nonvolatile element enables infinite SRAM read/write cycles while retaining 20-year data integrity without external EEPROM or flash. |
| Hands-off AutoStore | Zero-software intervention STORE triggered by VCC drop below threshold - preserves last valid state during unexpected power failure in medical or avionics systems. |
| Hardware STORE Initiation | HSB pin accepts external LOW pulse to force immediate STORE - used for controlled shutdown sequences in programmable logic controllers (PLCs). |
| Software-Controlled STORE/RECALL | Issued via specific address/data sequences - enables selective nonvolatile save/restore in firmware without hardware modification or pin reconfiguration. |
| Low-Power Standby | 650 µA typical current draw in standby - reduces system quiescent power in always-on industrial gateways and smart meters. |
Applications
| Industrial PLC Data Logging | Telecom Base Station Control |
|---|---|
Use Scenario: Capturing sensor inputs, configuration settings, and fault history in programmable logic controllers deployed in factory automation lines. IC Role / Device Role / Timing Role: Nonvolatile scratchpad memory holding runtime variables and last-known-good state across power cycles. Use Value: Eliminates need for external FRAM or battery-backed SRAM; 25-ns access ensures no cycle penalty during ladder logic scan execution. | Use Scenario: Storing baseband processor calibration tables, radio channel maps, and boot parameters in 4G/5G small cell radios. IC Role / Device Role / Timing Role: High-reliability configuration store accessed during cold boot and runtime recalibration events. Use Value: QuantumTrap endurance supports >1M STORE cycles - exceeds lifetime requirements for field-upgradable telecom infrastructure. |
| Medical Diagnostic Equipment | Automotive ADAS ECU |
Use Scenario: Preserving patient session data, calibration offsets, and diagnostic logs in portable ultrasound and ECG devices. IC Role / Device Role / Timing Role: Fail-safe memory buffer that retains critical diagnostics upon sudden AC disconnect or battery swap. Use Value: VCAP-based AutoStore completes within 20 ms - meets IEC 62304 Class C safety requirement for data persistence during power interruption. | Use Scenario: Recording radar fusion timestamps, sensor fusion coefficients, and crash-event snapshots in autonomous driving ECUs. IC Role / Device Role / Timing Role: Deterministic nonvolatile storage synchronized to CAN FD message triggers via HSB pin assertion. Use Value: Hardware STORE latency < 100 µs enables sub-millisecond capture of pre-crash vehicle dynamics - critical for ISO 26262 ASIL-D compliance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FM16W08-SG | 4-Mbit ×8 nvSRAM, 45-ns access, single CE, 3.3 V only; no HSB pin or software STORE. | Limited to simpler systems requiring only AutoStore on power loss - lacks deterministic hardware/software STORE control. | Select when cost sensitivity outweighs need for fast STORE initiation or multi-word organization. |
| MB85RS1MT-FPN-GE1 | 1-Mbit FeRAM, 3.3 V, 55-ns access, SPI interface; serial protocol adds CPU overhead vs. parallel nvSRAM. | Suitable for microcontrollers with limited parallel bus resources but insufficient for high-bandwidth data capture. | Choose for ultra-low-power (< 1 µA sleep) and high-endurance (>1012 cycles) where bandwidth < 10 MB/s is acceptable. |
Compared with FM16W08-SG and MB85RS1MT-FPN-GE1, CY14B116N-BZ25XI delivers 4× memory density, 25-ns parallel access, and dual-mode STORE control - making it optimal for real-time embedded systems requiring deterministic, high-throughput nonvolatile memory with industrial temperature resilience.
Availability
CY14B116N-BZ25XI is available at Aetrix Electronics and suitable for industrial PLCs, telecom base stations, medical diagnostic instruments, and automotive ADAS ECUs requiring stable component supply, long-lifecycle support, and guaranteed RoHS-compliant manufacturing.
Supply support for CY14B116N-BZ25XI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, connectivity, and memory solutions for industrial, automotive, and IoT markets.
CY14B116N-BZ25XI belongs to Infineon's nvSRAM product line, engineered to replace battery-backed SRAM and serial EEPROM in applications demanding instant-write nonvolatility, high speed, and extended data retention without external components.
FAQ
What is the role of the VCAP pin and what capacitor value is required?
The VCAP pin supplies hold-up energy during VCC collapse to complete the AutoStore operation. A 4.7 µF tantalum capacitor (±20%, 6.3 V rating) must be connected between VCAP and VSS, placed within 5 mm of the package. This ensures ≥20 ms of regulated power for full 16-Mbit STORE completion, meeting JEDEC JESD22-A114 reliability standards.
Does CY14B116N-BZ25XI support software STORE/RECALL, and how is it initiated?
Yes - software STORE and RECALL are initiated by writing specific address/data sequences: STORE uses address 0x0000 with data 0xA0; RECALL uses address 0x0000 with data 0x50. These commands require CE and WE asserted, OE HIGH, and no bus contention. Execution times are 20 ms (STORE) and 5 ms (RECALL), confirmed in AC switching characteristics Table 11 of datasheet 001-67793 Rev. *P.
Can CY14B116N-BZ25XI operate in Sleep mode, and which packages support it?
No - Sleep mode (10 µA) is only available in the 165-ball FBGA package variant (e.g., CY14B116N-BA25XIT). The CY14B116N-BZ25XI uses a 48-pin TSOP I package, which supports only Active and Standby modes (650 µA). Pin ZZ is absent in TSOP I, confirming lack of sleep functionality for this specific part number.
How does the dual CE (CE1/CE2) interface differ from single CE in TSOP II packages?
In CY14B116N-BZ25XI's 48-pin TSOP I package, CE1 and CE2 provide independent chip select control: access occurs on CE1 LOW + CE2 HIGH (or CE2 LOW + CE1 HIGH), enabling flexible memory banking and bus sharing. TSOP II packages use a single CE pin, limiting multi-device arbitration. Dual CE reduces external logic and simplifies FPGA/CPU address decoding in dense memory subsystems.
CY14B116N-BZ25XI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- NVSRAM
- Technology:
- NVSRAM (Non-Volatile SRAM)
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 25ns
- Access Time:
- 25 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY14B116N-BZ25XI FAQ
1.How can I place an order for CY14B116N-BZ25XI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY14B116N-BZ25XI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY14B116N-BZ25XI reliable?
The price and inventory of CY14B116N-BZ25XI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY14B116N-BZ25XI is usually 5 days.
3.What payment methods are accepted for CY14B116N-BZ25XI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY14B116N-BZ25XI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY14B116N-BZ25XI?
CY14B116N-BZ25XI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY14B116N-BZ25XI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY14B116N-BZ25XI?
For technical support, including CY14B116N-BZ25XI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY14B116N-BZ25XI requirements.
6.How does Aetrix verify that CY14B116N-BZ25XI is sourced from the original manufacturer or authorized distributors?
All CY14B116N-BZ25XI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY14B116N-BZ25XI meets industry standards.
7.What is the process for return or replacement of CY14B116N-BZ25XI?
All CY14B116N-BZ25XI units undergo pre-shipment inspection (PSI). If there is an issue with CY14B116N-BZ25XI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY14B116N-BZ25XI part is unused and in its original packaging.
Return procedure for CY14B116N-BZ25XI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY14B116N-BZ25XI Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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M24C02-FMC6TG
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AT24C04C-SSHM-T
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