Infineon Technologies CY14B116N-BZ25XIT

Overview

CY14B116N-BZ25XIT from Infineon Technologies (formerly Cypress) is a 16-Mbit nonvolatile SRAM organized as 1024K × 16, featuring QuantumTrap nonvolatile storage, 25-ns access time, and AutoStore on power-down. It operates from 2.7 V to 3.6 V across –40 °C to +85 °C and is used in industrial control systems requiring instant data retention without external backup power.

For engineers reviewing the CY14B116N-BZ25XIT datasheet, CY14B116N-BZ25XIT pinout, CY14B116N-BZ25XIT application, or CY14B116N-BZ25XIT equivalent, key selection criteria include ×16 bus width support, HSB-driven hardware STORE capability, VCAP-based hands-off power-loss protection, and TSOP II package compatibility with legacy SRAM footprints.

Technical Context

The device integrates a standard SRAM array (1024K × 16) with parallel QuantumTrap nonvolatile elements per cell, enabling infinite SRAM read/write cycles and 1 million STORE endurance. STORE/RECALL operations are decoupled: RECALL occurs automatically at power-up or via software, while STORE triggers on power-down (capacitor-assisted), HSB assertion, or software command.

It supports dual CE (CE1/CE2) logic in TSOP I and FBGA packages but uses single CE in TSOP II - this part (BZ25XIT) is a 54-pin TSOP II variant with single CE, ×16 configuration, and no Sleep mode (ZZ not functional). Address range A0–A19 and data lines DQ0–DQ15 are fully validated for industrial timing-critical applications.

Key Specifications

Pinout & Package

Package: 54-pin Thin Small-Outline Package (TSOP II), 0.8 mm pitch, 20.0 mm × 10.0 mm body size, single CE architecture, no Sleep mode (ZZ pin not functional).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile SRAM applications.

Compared with CY14B116N-BZ35XI, the -BZ25XIT delivers 10-ns tighter timing for high-throughput data acquisition; versus FM16W08-SG, it offers 4× density and native ×16 interface but requires VCAP and has finite STORE cycles - optimal for industrial data logging where speed and capacity outweigh endurance extremes.

Availability

CY14B116N-BZ25XIT is available at Aetrix Electronics and suitable for industrial control systems, medical device configuration storage, and telecom base station parameter retention requiring stable component supply and long-lifecycle support.

Supply support for CY14B116N-BZ25XIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and industrial control solutions.

This device belongs to the nvSRAM product line originally developed by Cypress and now maintained by Infineon, designed specifically for mission-critical applications demanding instant, reliable, and maintenance-free nonvolatile data retention without batteries or external controllers.

FAQ

What is the function of the VCAP pin, and what capacitor value is required?

The VCAP pin connects an external capacitor that supplies energy during VCC collapse to complete the STORE operation. A 4.7 µF tantalum capacitor with ≤1 Ω ESR is required - this value is validated in the datasheet for 25-ns devices to ensure full STORE completion before VCC falls below 2.0 V. Using ceramic capacitors is not recommended due to insufficient charge hold time.

Does CY14B116N-BZ25XIT support Sleep mode via the ZZ pin?

No. Sleep mode is only supported in the 165-ball FBGA package variant (as confirmed in Pin Definitions, Note 9). The CY14B116N-BZ25XIT is a 54-pin TSOP II package, and the ZZ pin is not functional - standby current remains at 650 µA, with no additional power reduction via ZZ assertion.

Can this part be used as a direct replacement for standard 1024K × 16 SRAMs?

Yes - it is pin-compatible and timing-compatible with industry-standard 1024K × 16 SRAMs in 54-pin TSOP II packages. All control signals (CE, WE, OE), address (A0–A19), and data (DQ0–DQ15) match. The only design change needed is adding the VCAP capacitor and optionally wiring HSB for hardware-initiated STORE.

How many STORE cycles can the QuantumTrap element endure?

The QuantumTrap nonvolatile element is rated for 1 million STORE cycles, as specified in the datasheet's "Data Retention and Endurance" section. This exceeds typical field requirements for industrial equipment with daily power cycles over 27 years - making it suitable for applications where STORE occurs on every power-down event.